Imaging array with improved dynamic range utilizing parasitic photodiodes within floating diffusion nodes of pixels

Patent metadata

Field	Value
Publication number	US-10128286-B2
Application number	US-201415208734-A
Country	US
Kind code	B2
Filing date	Jun 27, 2014
Priority date	Jul 8, 2013
Publication date	Nov 13, 2018
Grant date	Nov 13, 2018

Abstract

A pixel sensor having a main photodetector and a parasitic photodiode and a method for reading out that pixel sensor are disclosed. The pixel sensor is read by reading a first potential on a floating diffusion node in the pixel sensor while the floating diffusion node is isolated from the main photodiode. The pixel sensor is then exposed to light such that the floating diffusion node and the photodetector are both exposed to the light. A second potential on the floating diffusion node is then readout while the floating diffusion node is isolated from the main photodiode. After the first and second potentials are readout, a third potential on the floating diffusion node is readout. The main photodiode is then connected to the floating diffusion node, and a fourth potential on the floating diffusion node is readout. First and second light intensities are determined from the readout potentials.

First claim

What is claimed is:

1. A method for reading out a pixel sensor to generate a pixel sensor readout value indicative of an amount of light received by said pixel sensor during an exposure, said pixel sensor having a photodiode characterized by a saturation exposure, said saturation exposure being an exposure above which said photodiode cannot store photoelectrons generated by that exposure, said method comprising:
reading a first potential on a floating diffusion node in said pixel sensor while said floating diffusion node is isolated from said photodiode;
exposing said pixel sensor to light such that said floating diffusion node is also exposed to said light;
reading a second potential on said floating diffusion node while said floating diffusion node is isolated from said photodiode;
determining a first exposure from said first and second potentials;
reading a third potential on said floating diffusion node;
connecting said photodiode to said floating diffusion node;
reading a fourth potential on said floating diffusion node;
determining a second exposure from said third and fourth potentials, and
outputting said first exposure if said second exposure corresponds to an exposure that is greater than or equal to said saturation exposure as said readout value.

2. The method of claim 1 wherein said floating diffusion node is connected to a reset bus having a first reset potential and then disconnected from said reset bus prior to reading said first potential.

3. The method of claim 2 wherein said floating diffusion node is connected to said reset bus and then disconnected from said reset bus prior to reading said third potential.

4. The method of claim 1 wherein photoelectrons are shunted from said photodiode to ground if a potential on said photodiode exceeds an overflow potential.

Assignees

• Bae Sys Inf & Elect Sys Integ
• Bae Systems Imaging Solutions Inc

Inventors

• Fowler Boyd

Classifications

• H04N25/77

  Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components · CPC title

• H04N25/585

  with pixels having different sensitivities within the sensor, e.g. fast or slow pixels or pixels having different sizes · CPC title

• H04N23/54

  Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils · CPC title

• H01L27/14654

  Electricity · mapped topic

• H01L27/14609

  Electricity · mapped topic