Semiconductor module and manufacturing method of semiconductor module

Patent metadata

Field	Value
Publication number	US-10128167-B2
Application number	US-201715418787-A
Country	US
Kind code	B2
Filing date	Jan 30, 2017
Priority date	Mar 15, 2016
Publication date	Nov 13, 2018
Grant date	Nov 13, 2018

Abstract

A semiconductor module is provided, including: a cooling-target device; a first cooling unit on which the cooling-target device is placed and that has a flow channel through which a refrigerant for cooling the cooling-target device flows; and a second cooling unit to which the first cooling unit is fixed and that has a flow channel coupled with the flow channel of the first cooling unit. Also, a semiconductor module manufacturing method is provided, including: placing a cooling-target device on a first cooling unit that has a flow channel through which a refrigerant for cooling the cooling-target device flows; and fixing the first cooling unit to a second cooling unit that has a flow channel coupled with the flow channel of the first cooling unit.

First claim

What is claimed is:

1. A semiconductor module comprising:
a cooling-target device;
a first cooling unit on which the cooling-target device is placed and that has a flow channel through which a refrigerant for cooling the cooling-target device flows; and
a second cooling unit to which the first cooling unit is fixed and that has a flow channel coupled with the flow channel of the first cooling unit;
wherein the cooling-target device is provided at a first side of the first cooling unit, and the second cooling unit is provided at a second side of the first cooling unit opposite to the first side, and
wherein the flow channel of the second cooling unit includes a first connection to the flow channel of the first cooling unit, and a second connection that is not to the flow channel of the first cooling unit.

2. The semiconductor module according to claim 1 , further comprising an insulating layer that covers the cooling-target device and at least partially contacts the first cooling unit.

3. The semiconductor module according to claim 1 , wherein a volume of a housing of the first cooling unit is smaller than a volume of a housing of the second cooling unit.

4. The semiconductor module according to claim 1 , wherein the second cooling unit has a lower thermal conductivity than that of the first cooling unit.

5. The semiconductor module according to claim 1 , further comprising a screw that fixes the second cooling unit and the first cooling unit together by penetrating the second cooling unit and coupling with the first cooling unit.

6. The semiconductor module according to claim 1 , further comprising a plate unit that is arranged between the first cooling unit and the second cooling unit, fixed to the first cooling unit, and screwed together with the second cooling unit.

7. A semiconductor module comprising:
a cooling-target device;
a first cooling unit on which the cooling-target device is placed and that has a flow channel through which a refrigerant for cooling the cooling-target device flows;
a second cooling unit to which the first cooling unit is fixed and that has a flow channel coupled with the flow channel of the first cooling unit;
a plurality of the cooling-target devices; and
a plurality of the first cooling units each of which has at least one among the plurality of cooling-target devices placed thereon, wherein
the plurality of first cooling units are respectively fixed to the second cooling unit.

8. A semiconductor module comprising:
a cooling-target device;
a first cooling unit on which the cooling-target device is placed and that has a flow channel through which a refrigerant for cooling the cooling-target device flows; and
a second cooling unit to which the first cooling unit is fixed and that has a flow channel coupled with the flow channel of the first cooling unit;

wherein
the second cooling unit has:
a first plate portion that is fixed to the first cooling unit and includes a flow channel coupled with the flow channel of the first cooling unit; and
a second plate portion that is fixed to the first plate portion and includes a flow channel coupled with the flow channel of the first plate portion.

9. The semiconductor module according to claim 8 , wherein at least part of the flow channel of the second plate portion is formed of a groove formed in the second plate portion and a surface of the first plate on the second plate portion side.

10. The semiconductor module according to claim 8 , wherein the first cooling unit has a protrusion provided with the flow channel of the first cooling unit, the flow channel protruding to the second cooling unit side.

11. The semiconductor module according to claim 10 , wherein the protrusion protrudes from the first cooling unit side to the first plate portion.

12. The semiconductor module according to claim 10 , wherein the protrusion penetrates the first plate portion and protrudes past the first plate portion to the second plate portion side.

13. The semiconductor module according to claim 10 , wherein the protrusion includes, inside the flow channel of the second cooling unit, a coupling portion that has a diameter which is larger than a diameter of the protrusion.

14. The semiconductor module according to claim 8 , wherein the first plate portion includes a material different from that of the second plate portion.

15. The semiconductor module according to claim 8 , wherein the second plate portion is formed of a material which is the same as that of the first cooling unit.

16. The semiconductor module according to claim 8 , wherein the first plate portion has a coefficient of thermal expansion lower than that of the first cooling unit.

17. A semiconductor module manufacturing method comprising:
placing a cooling-target device on a first cooling unit that has a flow channel through which a refrigerant for cooling the cooling-target device flows; and
fixing the first cooling unit to a second cooling unit that has a flow channel coupled with the flow channel of the first cooling unit,
wherein the cooling-target device is provided at a first side of the first cooling unit, and the second cooling unit is provided at a second side of the first cooling unit opposite to the first side, and
wherein the flow channel of the second cooling unit includes a first connection to the flow channel of the first cooling unit, and a second connection that is not to the flow channel of the first cooling unit.

18. The semiconductor module manufacturing method according to claim 17 , further comprising covering the cooling-target device with an insulating layer after placing the cooling-target device on the first cooling unit.

Assignees

• Fuji Electric Co Ltd

Inventors

• Morozumi Akira
• Gohara Hiromichi
• Nishimura Yoshitaka

Classifications

• H10W90/764

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/754

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W74/114

  by a substrate and the encapsulations · CPC title

• H10W72/886

  Die-attach connectors and strap connectors · CPC title

• H10W72/884

  Die-attach connectors and bond wires · CPC title