Methods of thermally induced recrystallization

Patent metadata

Field	Value
Publication number	US-10128052-B1
Application number	US-201715668688-A
Country	US
Kind code	B1
Filing date	Aug 3, 2017
Priority date	Aug 3, 2017
Publication date	Nov 13, 2018
Grant date	Nov 13, 2018

Abstract

A method for thermally induced recrystallization of a film having a perovskite structure can include exposing the perovskite structure to a liquid phase induction atmosphere sufficient to at least partially liquefy the film. The substrate with the film can be heated while in the atmosphere to a heating temperature above a critical recrystallization temperature until the film recrystallizes to reform the perovskite structure with reduced defects and increased grain size. The liquid phase induction atmosphere can be purged, and the substrate with the film having the reformed perovskite structure can be allowed to cool. The film having the perovskite structure can have a formula ABX 3 , (RA) 2 A n−1 B n X 3n+1 , or (RA 2 )A n−1 B n X 3n+1 , where A is a monovalent cation, B is divalent metal cation, n is an integer, X is a halide ion, RA is an alkylammonium cation and RA 2 is an alkyldiammonium cation.

First claim

What is claimed is:

1. A method of thermally induced recrystallization of a film having a perovskite structure, comprising:
exposing a substrate with a film having a perovskite structure to a gaseous liquid phase induction atmosphere sufficient to at least partially convert the film to a liquid phase, wherein the film has the formula ABX 3 , (RA) 2 A n−1 B n X 3n+1 , or (RA 2 )A n−1 B n X 3n+1 where A contains a monovalent cation, B is divalent metal cation, n is an integer, X is a halide ion, RA is an alkylammonium cation and RA 2 is an alkyldiammonium cation;
heating the substrate with the film in the liquid phase while also in the gaseous atmosphere to a critical recrystallization temperature of the film until the film recrystallizes to reform the perovskite structure with reduced defects and increased grain size;
purging the gaseous liquid phase induction atmosphere while maintaining a film temperature above the critical recrystallization temperature; and
allowing the substrate with the film having the reformed perovskite structure to cool below the critical recrystallization temperature.

2. The method of claim 1 , wherein the substrate is a member selected from the group consisting of a glass, treated glass, metal foil, polymer, ceramic, silicon solar cell, composites thereof, and combinations thereof.

3. The method of claim 1 , wherein the substrate is a glass substrate.

4. The method of claim 1 , wherein the film is a three-dimensional perovskite where A is a member selected from the group consisting of methylammonium (MA), Cesium (Cs), Formamadinium (FA), Rubidium (Rb), and mixtures thereof.

5. The method of claim 1 , wherein the film is a two-dimensional perovskite where A is an alkylammonium cation.

6. The method of claim 5 , wherein the alkylammonium cation is selected from the group consisting of Butylammonium (BA), phenylethylammonium (PEA), cyclopropylammonium (CA), and mixtures thereof, wherein the mixtures thereof are mixed Rudlesden-Popper 2D/3D phases of the form (RA) 2 A n−1 B n X 3n+1 .

7. The method of claim 1 , wherein the film is a two-dimensional perovskite where A is an alkyldiammonium cation.

8. The method of claim 7 , wherein the alkyldiammonium cation is selected from the group consisting of butyldiammonium (BA 2 ), hexyldiammonium (HA 2 ), octyldiamonium (OA 2 ), dodecanediammonium (DDA 2 ), and mixtures thereof, wherein the mixtures thereof are Ruddlesden-Popper 2D/3D mixtures of the form (RA 2 )A n−1 M n X 3n+1 .

9. The method of claim 1 , wherein the B is a member selected from the group consisting of lead (Pb), tin (Sn), bismuth (Bi), antimony (Sb), silver (Ag), strontium (Sr), calcium (Ca), cadmium (Cd), magnesium (Mg), manganese (Mn), nickel (Ni), and combinations thereof.

10. The method of claim 1 , wherein the X is a member selected from the group consisting of iodide (I), bromide (Br), chloride (Cl), pseudohalide thiocyanate (SCN), Fluoride (F), and combinations thereof.

11. The method of claim 1 , wherein the atmosphere comprises a member selected from the group consisting of methylamine, Cesium, Rubidium, Formamidine (FA), alkylamines, alkyldiamines, primary amine, and combinations thereof.

12. The method of claim 1 , wherein an exposure period for the atmosphere prior to heating ranges from 5 seconds to 5 minutes.

13. The method of claim 1 , wherein the critical recrystallization temperature is at least 30° C.

14. The method of claim 1 , wherein the atmosphere includes a liquid phase inducing compound which produces a cation having the same composition as A.

15. The method of claim 1 , wherein the atmosphere excludes a liquid phase inducing compound which produces A.

16. The method of claim 15 , wherein the atmosphere includes a liquid phase inducing compound which produces a cation which replaces at least a portion of A in the film having the perovskite structure.

17. The method of claim 1 , wherein the atmosphere further includes a defect passivating agent.

18. The method of claim 17 , wherein the defect passivating agent is selected from the group consisting of fullerene, thiophene, pyridine, trioctylphosphine oxide, octadecanethiol, triphenylphosphine, hypophosphorous acid, aluminum (Al 3+ ), copper (Cu 1+ ), silver (Ag 1+ ), sodium (Na 1+ ), potassium (K 1+ ), and combinations thereof.

19. The method of claim 1 , wherein the film having the perovskite structure is methylammonium lead triiodide (MAPbI 3 ) and wherein the atmosphere comprises methylamine.

20. The method of claim 1 , further comprising purging oxygen from the atmosphere prior to the exposing of the substrate with the film having the perovskite structure to the atmosphere.

21. The method of claim 1 , further comprising forming a tandem device where the film having the perovskite structure is adjacent to a solar film.

Assignees

• Univ Utah Res Found

Inventors

• Zang Ling
• Jacobs Daniel

Classifications

• H01L51/0077

  Electricity · mapped topic

• H01G9/2009

  Solid electrolytes · CPC title

• H01L51/4246

  Electricity · mapped topic

• H01L2251/10

  Electricity · mapped topic

• H01G9/0036 Primary

  Formation of the solid electrolyte layer · CPC title