Radiograph detector and method for manufacturing the same
US-2016041272-A1 · Feb 11, 2016 · US
Scintillator, scintillator panel, and radiological image conversion panel
US10126432B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10126432-B2 |
| Application number | US-201715454461-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 9, 2017 |
| Priority date | Mar 10, 2016 |
| Publication date | Nov 13, 2018 |
| Grant date | Nov 13, 2018 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
A scintillator includes a scintillator layer including a phosphor and an augmenting agent and has an optical reflectance A1 at a wavelength 440 nm and an optical reflectance B1 at a wavelength 520 nm, wherein when an optical reflectance at the wavelength 440 nm is defined as A2 and an optical reflectance at the wavelength 520 nm is defined as B2 after exposure to 2,000 R of radiation, ratios between the optical reflectances “A=A2/A1” and “B=B2/B1” before and after exposure to radiation satisfy “0.70≤A/B≤1.10”.
First claim
Opening claim text (preview).
What is claimed is: 1. A scintillator comprising: a scintillator layer comprising a phosphor and an augmenting agent, and having an optical reflectance A1 at a wavelength 440 nm and an optical reflectance B1 at a wavelength 520 nm, and wherein when an optical reflectance at the wavelength 440 nm is defined as A2 and an optical reflectance at the wavelength 520 nm is defined as B2 after exposure to 2,000 R of radiation, ratios between the optical reflectances “A=A2/A1” and “B=B2/B1” before and after exposure to radiation satisfy “0.70≤AB≤1.10;”, wherein a concentration of the augmenting agent included in the scintillator is 0.005 to 0.2 mol %, and wherein the augmenting agent included in the scintillator includes at least thallium. 2. The scintillator according to claim 1 , wherein a concentration of an augmenting agent included in the scintillator is 0.01 to 0.15 mol %. 3. The scintillator according to claim 1 , wherein an augmenting agent included in the scintillator includes at least sodium together with thallium. 4. A scintillator panel formed by disposing a layer of the scintillator according to claim 1 on a support body. 5. The scintillator according to claim 1 , wherein the scintillator comprises a reflection layer comprising a resin comprising a light scattering particle and a binder, wherein the resin has elasticity. 6. The scintillator according to claim 1 , wherein the scintillator comprises one of gadolinium oxysulfide, cadmium tungstate, gadolinium silicate, bismuth germanate, lutetium silicate, lead tungstate, and cesium bromide. 7. The scintillator according to claim 1 , wherein the scintillator includes at least cesium iodide as a parent material. 8. A radiological image conversion panel comprising: a scintillator; and a photoelectric conversion panel; wherein the scintillator is provided on the photoelectric conversion panel; and wherein the scintillator comprises: a scintillator layer including a phosphor and an augmenting agent, and having an optical reflectance A1 at a wavelength 440 nm and an optical reflectance B1 at a wavelength 520 nm, and wherein when an optical reflectance at the wavelength 440 nm is defined as A2 and an optical reflectance at the wavelength 520 nm is defined as B2 after exposure to 2,000 R of radiation, ratios between the optical reflectances “A=A2/A1” and “B=B2/B1” before and after exposure to radiation satisfy “0.70≤A/B≤1.10”; a concentration of the augmenting agent included in the scintillator is 0.005 to 0.2 mol %; the scintillator includes at least cesium iodide as a parent material; and wherein the augmenting agent included in the scintillator includes at least thallium. 9. A scintillator comprising: a scintillator layer including a phosphor and an augmenting agent, and having an optical reflectance A1 at a wavelength 440 nm and an optical reflectance B1 at a wavelength 520 nm, and wherein when an optical reflectance at the wavelength 440 nm is defined as A2 and an optical reflectance at the wavelength 520 nm is defined as B2 after exposure to 2,000 R of radiation, ratios between the optical reflectances “A=A2/A1” and “B=B2/B1” before and after exposure to radiation satisfy “0.70≤A/B≤1.10; wherein the augmenting agent included in the scintillator comprises sodium and thallium, and wherein a concentration of the augmenting agent included in the scintillator is 0.005 to 0.2 mol %.
Assignees
Inventors
Classifications
- G01T1/2002Primary
Optical details, e.g. reflecting or diffusing layers · CPC title
Electricity · mapped topic
Scintillation-photodiode combinations · CPC title
Electricity · mapped topic
Reflectors · CPC title
Patent family
Related publications grouped by family.
External sources
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US10126432B2 cover?
- A scintillator includes a scintillator layer including a phosphor and an augmenting agent and has an optical reflectance A1 at a wavelength 440 nm and an optical reflectance B1 at a wavelength 520 nm, wherein when an optical reflectance at the wavelength 440 nm is defined as A2 and an optical reflectance at the wavelength 520 nm is defined as B2 after exposure to 2,000 R of radiation, ratios be…
- Who is the assignee on this patent?
- Konica Minolta Inc
- What technology area does this patent fall under?
- Primary CPC classification G01T1/2002. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Nov 13 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).