Solid light-receiving device for UV light

Patent metadata

Field	Value
Publication number	US-10126166-B2
Application number	US-201415300025-A
Country	US
Kind code	B2
Filing date	Mar 31, 2014
Priority date	Mar 31, 2014
Publication date	Nov 13, 2018
Grant date	Nov 13, 2018

Abstract

Provided is a solid-state light-receiving device for ultraviolet light, which is capable of measuring an irradiation amount of UV-rays, which are harmful to a human body, accurately and appropriately with a simple structure, and of being formed easily and integrally with sensors of peripheral circuits, and which is small, lightweight, low cost, and suitable for mobile or wearable applications. The solid-state light-receiving device for ultraviolet light includes a first photodiode, a second photodiode, and a differential circuit to which signals based on outputs of those photodiodes are input. The solid-state light-receiving device for ultraviolet light also includes semiconductor layer regions, which are formed in and on the above-mentioned photodiodes, and each of which includes a highest concentration position of semiconductor impurities.

First claim

The invention claimed is:

1. A solid-state light-receiving device for ultraviolet light, comprising:
a semiconductor substrate having silicon (Si) as a main component, the semiconductor substrate including a first photodiode and a second photodiode, both of which are arranged so as not to three-dimensionally overlap with each other in effect; and
a differential circuit to which a first signal based on a first output from the first photodiode and a second signal based on a second output from the second photodiode are input,
(a) wherein the first photodiode includes a first semiconductor layer region of a first conductivity type, and a second semiconductor layer region of a second conductivity type, which is formed on the first semiconductor layer region and forms a semiconductor junction with the first semiconductor layer region, the second conductivity type being opposite to the first conductivity type,
(b) wherein the first semiconductor layer region has first concentrations of semiconductor impurities distributed in a layer thickness direction, and includes a highest concentration first position in the first distribution,
(c) wherein the second photodiode includes a third semiconductor layer region of the first conductivity type, and a fourth semiconductor layer region of the second conductivity type, which is formed on the third semiconductor layer region and forms a semiconductor junction with the third semiconductor layer region, the second conductivity type being opposite to the first conductivity type,
(d) wherein the third semiconductor layer region has second concentrations of semiconductor impurities distributed in the layer thickness direction, and includes a highest concentration second position in the second distribution,
(e) wherein the semiconductor substrate further includes a fifth semiconductor layer region of the first conductivity type formed on the second semiconductor layer region, the fifth semiconductor layer region having third concentrations of semiconductor impurities distributed in the layer thickness direction, and including a highest concentration third position in the third distribution,
(f) wherein the semiconductor substrate further includes a sixth semiconductor layer region of the first conductivity type formed on the fourth semiconductor layer region, the sixth semiconductor layer region having fourth concentrations of semiconductor impurities distributed in the layer thickness direction, and including a highest concentration fourth position in the fourth distribution,
(g) wherein the highest concentration first position and the highest concentration second position are the same in a direction of depth from a front surface of the semiconductor substrate, and
(h) wherein the highest concentration third position and the highest concentration fourth position are different in the direction of depth from the front surface of the semiconductor substrate.

2. The solid-state light-receiving device for ultraviolet light according to claim 1 ,
wherein the second highest concentration position is at a position deeper than the fourth highest concentration position,
wherein the third semiconductor layer region has a layer thickness capable of sufficiently absorbing UV-A light and UV-B light in a region shallower than the second highest concentration position, and
wherein the sixth semiconductor layer region includes the fourth highest concentration position within a thickness at which none of UV-A light and UV-B light is capable of being regarded in effect as being absorbed in the sixth semiconductor layer region.

3. The solid-state light-receiving device for ultraviolet light according to claim 1 , wherein the differential circuit is formed integrally with the first photodiode and the second photodiode in the semiconductor substrate.

4. The solid-state light-receiving device for ultraviolet light according to claim 3 , wherein the differential circuit comprises a differential amplifier circuit.

5. An electronic device, comprising the solid-state light-receiving device for ultraviolet light of claim 1 .

6. An electronic device according to claim 5 , wherein the electronic device further has a communication function.

Assignees

• Univ Tohoku

Inventors

• Sugawa Shigetoshi
• Kuroda Rihito

Classifications

• G01J1/1626

  Arrangements with two photodetectors, the signals of which are compared · CPC title

• H01L27/1443

  Electricity · mapped topic

• G01J1/429 Primary

  applied to measurement of ultraviolet light (using counting tubes G01T) · CPC title

• H01L27/142

  Electricity · mapped topic

• H01L31/09

  Electricity · mapped topic