Method of patterning graphene holes and method of fabricating graphene transparent electrode by using pulse laser

Patent metadata

Field	Value
Publication number	US-10124438-B2
Application number	US-201615065488-A
Country	US
Kind code	B2
Filing date	Mar 9, 2016
Priority date	Aug 27, 2015
Publication date	Nov 13, 2018
Grant date	Nov 13, 2018

Abstract

A method of patterning holes includes placing a substrate on a stage of a laser system, the substrate having a graphene layer on a surface thereof, generating a pulse laser from the laser system, and forming a plurality of hole patterns spaced apart from each other on the graphene layer by irradiating the pulse laser while the graphene layer is in motion.

First claim

What is claimed is:

1. A method of patterning graphene holes, the method comprising:
placing a substrate on a stage of a laser system, the substrate having a graphene layer on a surface thereof;
generating a pulse laser from the laser system, the pulse laser having a repetition rate and a pulse diameter;
generating relative motion between the pulse laser and the graphene layer at a scanning speed by one of moving the stage and scanning the pulse laser; and
forming a plurality of hole patterns spaced apart from each other on the graphene layer by irradiating the pulse laser while the graphene layer is in the relative motion with respect to the pulse laser at the scanning speed such that each repetition of the pulse laser removes material from the graphene layer in a shape of the pulse diameter of the pulse laser,
wherein the plurality of hole patterns formed in the graphene layer are spaced apart by a minimum distance between each subsequent hole pattern having the shape of the pulse diameter formed in the graphene layer.

2. The method of claim 1 , wherein the placing the substrate on the stage places a flexible transparent substrate.

3. The method of claim 2 , wherein the generating the pulse laser generates a pulse laser having a wavelength of 400 nm to 1200 nm.

4. The method of claim 1 , further comprising:
reducing a surface resistance of the graphene layer by performing chemical doping on the graphene layer.

5. The method of claim 1 , wherein the generating the pulse laser generates the pulse laser having a pulse width of 1 ns to 200 ns.

6. The method of claim 1 , wherein the generating the pulse laser generates the pulse laser having an average output of 20 mW to 600 mW.

7. The method of claim 1 , wherein the generating the pulse laser generates the pulse laser having a scanning speed of 200 mm/s to 1,000 mm/s.

8. The method of claim 1 , wherein the generating the pulse laser generates the pulse laser having a repetition rate of 3 kHz to 100 kHz.

9. A method of fabricating a graphene transparent electrode, the method comprising:
providing a flexible transparent substrate;
forming a graphene layer on the flexible transparent substrate;
placing the flexible transparent substrate with the graphene layer formed thereon onto a stage of a laser system;
generating a pulse laser from the laser system, the pulse laser having a repetition rate and a pulse diameter;
generating relative motion between the pulse laser and the graphene layer at a scanning speed by one of moving the stage and scanning the pulse laser; and
forming a plurality of hole patterns spaced apart from each other on the graphene layer by irradiating the pulse laser while the graphene layer is in the relative motion with respect to the pulse laser at the scanning speed such that each repetition of the pulse laser removes material from the graphene layer in a shape of the pulse diameter of the pulse laser,
wherein the plurality of hole patterns formed in the graphene layer are spaced apart by a minimum distance between each subsequent hole pattern having the shape of the pulse diameter formed in the graphene layer.

10. The method of claim 9 , wherein the generating the pulse laser generates the pulse laser having a wavelength of 400 nm to 1200 nm.

11. The method of claim 9 , further comprising:
reducing a surface resistance of the graphene layer by performing chemical doping on the graphene layer.

12. The method of claim 9 , wherein the generating the pulse laser generates the pulse laser having a pulse width of 1 ns to 200 ns.

13. The method of claim 9 , wherein the generating the pulse laser generates the pulse laser having an average output of 20 mW to 600 mW.

14. The method of claim 9 , wherein the generating the pulse laser generates the pulse laser having a scanning speed of 200 mm/s to 1,000 mm/s.

15. The method of claim 9 , wherein the generating the pulse laser generates the pulse laser having a repetition rate of 3 kHz to 100 kHz.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Lee Jeongyub
• Woo Yunsung
• Lee Changseung
• Cho Eunhyoung

Classifications

• B23K26/0624

  using ultrashort pulses, i.e. pulses of 1 ns or less · CPC title

• H05K2201/0323

  Carbon · CPC title

• B23K26/082

  Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head · CPC title

• B23K26/0869

  Devices involving movement of the laser head in at least one axial direction · CPC title

• H05K2201/10128

  Display · CPC title