Tunable waveguide devices

Patent metadata

Field	Value
Publication number	US-10122149-B2
Application number	US-201715398690-A
Country	US
Kind code	B2
Filing date	Jan 4, 2017
Priority date	Jan 4, 2016
Publication date	Nov 6, 2018
Grant date	Nov 6, 2018

Abstract

Methods, systems, and apparatus, including a laser including a layer having first and second regions, the first region including a void; a mirror section provided on the layer, the mirror section including a waveguide core, at least part of the waveguide core is provided over at least a portion of the void; a first grating provided on the waveguide core; a first cladding layer provided between the layer and the waveguide core and supported by the second region of the layer; a second cladding layer provided on the waveguide core; and a heat source configured to change a temperature of at least one of the waveguide core and the grating, where an optical mode propagating in the waveguide core of the mirror section does not incur substantial loss due to interaction with portions of the mirror section above and below the waveguide core.

First claim

What is claimed is:

1. A laser comprising:
a layer having first and second regions, the first region including a void;
a mirror section provided on the layer, the mirror section comprising:
a waveguide core, at least part of the waveguide core is provided over at least a portion of the void;
a first grating provided on the waveguide core;
a first cladding provided between the layer and the waveguide core and supported by the second region of the layer;
a second cladding provided on the waveguide core; and
a heat source configured to change a temperature of at least one of the waveguide core and the grating,

wherein an optical mode propagating in the waveguide core of the mirror section does not incur substantial loss due to interaction with portions of the mirror section above and below the waveguide core.

2. The laser in accordance with claim 1 , wherein a loss incurred by the optical mode during said propagation in the mirror is less than 7 dB/cm.

3. The laser in accordance with claim 2 , wherein a loss incurred by the optical mode during said propagation in the mirror is less than 5 dB/cm.

4. The laser in accordance with claim 3 , wherein a loss incurred by the optical mode during said propagation in the mirror is less than 2.5 dB/cm.

5. The laser in accordance with claim 1 , wherein the lack of substantial loss is achieved by not having a deleterious device layer in the layer.

6. A semiconductor device, comprising:
a substrate;
a layer formed on the substrate, the layer having first and second regions, the first region of the layer including one or more voids;
a gain section provided on the layer, the gain section comprising:
a first waveguide core;
a p-n junction; and
a contact layer provided on the first waveguide core, the contact layer being configured to provide an electrical contact to the p-n junction of the gain section;

a first mirror section provided on the layer, the first mirror section comprising:
a second waveguide core, wherein at least part of the second waveguide core is provided over a first void;
a first grating provided on the second waveguide core; and
a first heat source configured to change a temperature of the second waveguide core and the first grating;

a phase section provided on the layer, the phase section comprising:
a third waveguide core; and
a second heat source configured to change a temperature of the third waveguide core;

a second mirror section, the second mirror section comprising:
a fourth waveguide core, wherein at least part of the fourth waveguide core is provided over a second void;
a second grating provided on the fourth waveguide core; and
a third heat source configured to change a temperature of the fourth waveguide core and the second grating;

first, second, third, and fourth claddings surrounding the first, second, third, and fourth waveguide cores, respectively,
wherein the first waveguide core, the second waveguide core, the third waveguide core, and the fourth waveguide cores are configured to optically communicate with one another, and
wherein an optical mode propagating in the first and second mirror sections does not incur substantial loss due to interaction with portions of the first mirror section and the second mirror section outside the second and fourth waveguide cores.

7. The semiconductor laser of claim 6 , wherein the optical mode propagating in the first mirror section or the second mirror section incurs a loss that is less than 7 dB/cm.

8. The semiconductor laser of claim 7 , wherein the optical mode propagating in the first mirror section or the second mirror section incurs a loss that is less than 5 dB/cm.

9. The semiconductor laser of claim 8 , wherein the optical modal propagating in the first mirror section or the second mirror section incurs a loss that is less than 2.5 dB/cm.

10. The semiconductor device of claim 6 ,
wherein one or more deleterious device layers do not extend into the mirror sections where the first void and the second void are located.

Assignees

• Infinera Corp

Inventors

• Evans Peter W
• Lu Mingzhi
• Kish Jr Fred A
• Lal Vikrant
• Corzine Scott
• Osenbach John W
• Yan Jin

Classifications

• H01S5/0425

  Electrodes, e.g. characterised by the structure · CPC title

• G02F2201/58

  Arrangements comprising a monitoring photodetector · CPC title

• G02F1/2257

  the optical waveguides being made of semiconducting material · CPC title

• G02F1/2255

  controlled by a high-frequency electromagnetic component in an electric waveguide structure · CPC title

• G02B2006/12121

  Laser · CPC title