Method for fabricating light-emitting element using chamber with mass spectrometer

Patent metadata

Field	Value
Publication number	US-10121969-B2
Application number	US-201615174383-A
Country	US
Kind code	B2
Filing date	Jun 6, 2016
Priority date	Jun 28, 2013
Publication date	Nov 6, 2018
Grant date	Nov 6, 2018

Abstract

A light-emitting element and its fabrication method are provided. The light-emitting element includes an EL layer between a pair of electrode, and the EL layer is formed by evaporation of an organic compound. The evaporation is conducted so that the partial pressure of a component with a specific molecular weight in a film-formation chamber, which is monitored by a mass spectrometer, does not exceed a specific value during the evaporation. This method allows the formation of a light-emitting element having an improved lifetime.

First claim

What is claimed is:

1. A method for fabricating a semiconductor device, the method comprising the step of:
forming a first film by evaporating a first organic compound under a first condition,
wherein, in the first condition, each partial pressure of ethanol, hexane, dichloromethane and toluene is in a range from 1.0×10 −12 Pa to 5.0×10 −8 Pa.

2. The method according to claim 1 , further comprising the step of:
stopping evaporation of the first organic compound under a second condition, and
forming a second film over the first film by evaporating under the first condition after stopping the evaporation,
wherein any one of partial pressure of ethanol, hexane, dichloromethane and toluene in the second condition is 1.0×10 −9 Pa or more.

3. The method according to claim 1 , wherein, in the first condition, each partial pressure of a mass number of 46 or more and 130 or less is in a range from 1.0×10 −12 Pa to 5.0×10 −8 Pa.

4. The method according to claim 1 , wherein, in the first condition, each partial pressure of a mass number of 46 or more and 200 or less is in a range from 1.0×10 −12 Pa to 5.0×10 −8 Pa.

5. The method according to claim 1 , wherein a pressure of the first condition is 1.0×10 −4 Pa or less.

6. The method according to claim 1 , wherein the first film comprises the first organic compound and a second organic compound.

7. The method according to claim 6 , wherein the evaporation is co-evaporation.

8. The method according to claim 1 , wherein the first organic compound is a light-emitting substance.

9. The method according to claim 1 , wherein the semiconductor device is a light-emitting element.

10. A method for fabricating a semiconductor device, the method comprising the step of:
forming a film comprising a first organic compound under a first condition,
wherein, in the first condition, a ratio of a partial pressure of toluene is less than or equal to 0.1% of a total pressure of the first condition.

11. The method according to claim 10 , wherein, in the first condition, each partial pressure of ethanol, hexane and dichloromethane is less than or equal to 0.1% of the total pressure of the first condition.

12. The method according to claim 10 , wherein, in the first condition, each partial pressure of a mass number of 46 or more and 130 or less is less than or equal to 0.1% of the total pressure of the first condition.

13. The method according to claim 10 , wherein, in the first condition, each partial pressure of a mass number of 46 or more and 200 or less is in a range from 1.0×10 −12 Pa to 5.0×10 −8 Pa.

14. The method according to claim 10 , wherein a pressure of the first condition is 1.0×10 −4 Pa or less.

15. The method according to claim 10 , wherein the film comprises the first organic compound and a second organic compound.

16. The method according to claim 15 , wherein the film is formed by co-evaporation.

17. The method according to claim 10 , wherein the first organic compound is a light-emitting substance.

18. The method according to claim 10 , wherein the semiconductor device is a light-emitting element.

Assignees

• Semiconductor Energy Lab

Inventors

• Yamazaki Shunpei
• Seo Satoshi
• Suzuki Tsunenori

Classifications

• H01L51/56

  Electricity · mapped topic

• C23C14/243 Primary

  Crucibles for source material (C23C14/28, C23C14/30 take precedence) · CPC title

• C23C14/12

  Organic material · CPC title

• C23C14/548

  Controlling the composition · CPC title

• H01L51/001

  Electricity · mapped topic