Optoelectronic semiconductor chip comprising a multi-quantum well comprising at least one high barrier layer

Patent metadata

Field	Value
Publication number	US-10121936-B2
Application number	US-201715645813-A
Country	US
Kind code	B2
Filing date	Jul 10, 2017
Priority date	Jul 25, 2013
Publication date	Nov 6, 2018
Grant date	Nov 6, 2018

Abstract

An optoelectronic semiconductor chip including a multi-quantum well including at least one high barrier layer is disclosed. In an embodiment, the chip includes a p-type semiconductor region, an n-type semiconductor region and an active layer suitable for emission of radiation arranged between the p-type region and the n-type region, wherein the active layer is in the form of a multiple quantum well structure. The multiple quantum well structure has a plurality of alternating quantum well layers and barrier layers, wherein a barrier layer arranged closer to the p-type region than to the n-type region is a high barrier layer having an electronic band gap E hb that is larger than electronic band gaps E b of other barrier layers, and wherein a quantum well layer that adjoins the high barrier layer on a side facing towards the p-type region has a thickness that is greater than thicknesses of other quantum well layers.

First claim

What is claimed is:

1. An optoelectronic semiconductor chip comprising:
a p-type semiconductor region;
an n-type semiconductor region; and
an active layer suitable for emission of radiation arranged between the p-type semiconductor region and the n-type semiconductor region, the active layer comprising a multiple quantum well structure, the multiple quantum well structure having a plurality of alternating quantum well layers and barrier layers, wherein a barrier layer arranged closer to the p-type semiconductor region than to the n-type semiconductor region is a high barrier layer having an electronic band gap E hb that is larger than electronic band gaps E b of other barrier layers, and wherein a quantum well layer that adjoins the high barrier layer on a side of the high barrier layer facing towards the p-type semiconductor region has a thickness that is greater than thicknesses of other quantum well layers.

2. The optoelectronic semiconductor chip according to claim 1 , wherein the high barrier layer has a band gap E hb for which the following applies: E hb −E b ≥0.05 eV.

3. The optoelectronic semiconductor chip according to claim 1 , wherein the multiple quantum well structure has not more than 10 high barrier layers.

4. The optoelectronic semiconductor chip according to claim 3 , wherein first k barrier layers starting from the p-type semiconductor region are high barrier layers, where k is a number between 1 and 10.

5. The optoelectronic semiconductor chip according to claim 1 , wherein the multiple quantum well structure has just one high barrier layer.

6. The optoelectronic semiconductor chip according to claim 5 , wherein the high barrier layer is arranged between a quantum well layer that is a mth quantum well layer starting from the p-type semiconductor region and an immediately adjacent quantum well layer, where m is a number between 1 and 20.

7. The optoelectronic semiconductor chip according to claim 6 , wherein m=1.

8. The optoelectronic semiconductor chip according to claim 1 , wherein the multiple quantum well structure has a plurality of high barrier layers that are arranged closer to the p-type semiconductor region than to the n-type semiconductor region.

9. The optoelectronic semiconductor chip according to claim 1 , wherein the high barrier layer and the other barrier layers each comprise In x Al y Ga 1-x-y P or In x Al y Ga 1-x-y N, where 0≤x≤1, 0≤y≤1 and x+y≤1, and wherein an aluminum content y of the high barrier layer is greater than an aluminum content y of the other barrier layers.

10. The optoelectronic semiconductor chip according to claim 1 , wherein the high barrier layer and the other barrier layers each comprise In x Al y Ga 1-x-y As, where 0≤x≤1, 0≤y≤1 and x+y≤1, and wherein an aluminum content y of the high barrier layer is greater than an aluminum content y of the other barrier layers.

11. The optoelectronic semiconductor chip according to claim 1 , wherein the chip includes at least 10 other barrier layers.

12. The optoelectronic semiconductor chip according to claim 11 , wherein the chip includes at least 20 other barrier layers.

13. The optoelectronic semiconductor chip according to claim 1 , wherein the number of other barrier layers having the band gap E b is at least 5 times as great as the number of high barrier layer(s) having the increased band gap E hb .

14. The optoelectronic semiconductor chip according to claim 1 , wherein the number of other barrier layers having the band gap E b is at least 10 times as great as the number of high barrier layer(s) having the increased band gap E hb .

15. The optoelectronic semiconductor chip according to claim 1 , wherein a quantum well layer that adjoins the high barrier layer on a side facing towards the p-type semiconductor region has an electronic band gap E lw that is smaller than a band gap E w of other quantum well layers.

16. The optoelectronic semiconductor chip according to claim 1 , wherein the multiple quantum well structure is suitable for the emission of radiation in a wavelength range from 550 nm to 640 nm.

17. An optoelectronic semiconductor chip comprising:
a p-type semiconductor region;
an n-type semiconductor region; and
an active layer suitable for emission of radiation arranged between the p-type semiconductor region and the n-type semiconductor region, the active layer comprising a multiple quantum well structure, the multiple quantum well structure having a plurality of alternating quantum well layers and barrier layers,
wherein a barrier layer arranged closer to the p-type semiconductor region than to the n-type semiconductor region is a high barrier layer having an electronic band gap E hb that is larger than electronic band gaps E b of other barrier layers,
wherein a quantum well layer that adjoins the high barrier layer on a side facing towards the p-type semiconductor region has a thickness that is greater than thicknesses of other quantum well layers,
wherein the multiple quantum well structure has just one high barrier layer, and
wherein the high barrier layer is arranged between a quantum well layer that is a mth quantum well layer starting from the p-type semiconductor region and an immediately adjacent quantum well layer, where m is a number between 1 and 20.

18. The optoelectronic semiconductor chip according to claim 17 , wherein m=1.

Assignees

• Osram Opto Semiconductors Gmbh

Inventors

• Tangring Ivar
• Ernst Felix

Classifications

• H01L33/06 Primary

  Electricity · mapped topic

• H01L33/32

  Electricity · mapped topic

• H10H20/825

  containing nitrogen, e.g. GaN · CPC title

• H10H20/812 Primary

  within the light-emitting regions, e.g. having quantum confinement structures · CPC title