Device with multiple, stacked light emitting devices

Patent metadata

Field	Value
Publication number	US-10121770-B2
Application number	US-201615551381-A
Country	US
Kind code	B2
Filing date	Feb 10, 2016
Priority date	Feb 18, 2015
Publication date	Nov 6, 2018
Grant date	Nov 6, 2018

Abstract

A device according to embodiments of the invention includes a first semiconductor light emitting layer disposed between a first n-type region and a first p-type region. A second semiconductor light emitting layer disposed between a second n-type region and a second p-type region is disposed over the first semiconductor light emitting layer. A non-III-nitride material separates the first and second light emitting layers.

First claim

The invention claimed is:

1. A device comprising:
a first light emitting structure including a first semiconductor light emitting layer disposed between a first n-type region and a first p-type region;
a second light emitting structure including a second semiconductor light emitting layer disposed between a second n-type region and a second p-type region; and
a non-III-nitride material separating the first and second light emitting structures, the non-III-nitride material comprising an adhesive attaching the first and second light emitting structures;
the second semiconductor light emitting layer being disposed over the first semiconductor light emitting layer,
wherein the non-III-nitride material separating the first and second light emitting structures comprises a wavelength converting material.

2. The device of claim 1 wherein:
the first n-type region, the first light emitting layer, and the first p-type region are grown on a first growth substrate; and
the second n-type region, the second light emitting layer, and the second p-type region are grown on a second growth substrate.

3. The device of claim 2 further comprising:
a first contact electrically connected to the first n-type region; and
a second contact electrically connected to the first p-type region.

4. The device of claim 3 further comprising:
a third contact electrically connected to the second n-type region;
a fourth contact electrically connected to the second p-type region;
a first wire bond connecting the third contact to a mount; and
a second wire bond connecting the third contact to the mount.

5. The device of claim 3 further comprising:
a first wire bond connecting the first contact to a mount; and
a second wire bond connecting the second contact to the mount.

6. The device of claim 5 further comprising:
a third contact electrically connected to the second n-type region;
a fourth contact electrically connected to the second p-type region;
a third wire bond connecting the third contact to the mount; and
a fourth wire bond connecting the fourth contact to the mount.

7. The device of claim 5 wherein the non-III-nitride material separating the first and second light emitting structures further comprises a separator, wherein the separator spaces the second light emitting structure apart from the first light emitting structure and protects the first and second wire bonds.

8. The device of claim 2 wherein the non-III-nitride material separating the first and second light emitting structures further comprises a separator, wherein the adhesive comprises:
a first adhesive layer attaching the first p-type region to the separator; and
a second adhesive layer attaching the second growth substrate to the separator.

9. The device of claim 1 wherein the wavelength converting material is disposed in the adhesive.

10. The device of claim 1 wherein the non-III-nitride material separating the first and second light emitting structures further comprises a separator, wherein the separator is comprised of the wavelength converting material.

11. The device of claim 8 wherein the first growth substrate is attached to a mount.

12. A device comprising:
a growth substrate made of a non-III-nitride material and having a first surface and a second surface opposite the first surface;
a first light emitting structure including a first semiconductor light emitting layer disposed between a first n-type region and a first p-type region, the first semiconductor light emitting layer, the first n-type region, and the first p-type region being grown on the first surface of the growth substrate; and
a second light emitting structure including a second semiconductor light emitting layer disposed between a second n-type region and a second p-type region, the second semiconductor light emitting layer, the second n-type region, and the second p-type region being grown on the second surface of the growth substrate.

13. The device of claim 12 wherein
the first light emitting device is mounted contact side down on a mount; and
the second light emitting device is wire bonded to the mount.

14. A method comprising:
growing a first semiconductor structure comprising a first light emitting layer sandwiched between a first n-type region and a first p-type region on a first surface of a non-III-nitride growth substrate; and
growing a second semiconductor structure comprising a second light emitting layer sandwiched between a second n-type region and a second p-type region on a second surface of the non-III-nitride growth substrate, the second surface being opposite the first surface.

15. The method of claim 14 further comprising:
attaching the first semiconductor structure to a mount via a first contact disposed on the first n-type region and a second contact disposed on the first p-type region;
forming a first wire bond between the mount and a third contact disposed on the second n-type region; and
forming a second wire bond between the mount and a fourth contact disposed on the second p-type region.

Assignees

• Koninklijke Philips Nv

Inventors

• Bechtel Hans-Helmut
• Nelson Erik
• Schricker April Dawn

Classifications

• H10W90/732

  between stacked chips · CPC title

• H10W72/5363

  the connected ends being wedge-shaped · CPC title

• H10W72/884

  Die-attach connectors and bond wires · CPC title

• H10W72/536

  the connected ends being ball-shaped · CPC title

• H10W90/00 Primary

  Package configurations · CPC title