Semiconductor device and electric power conversion device having relay terminal directly fixed to an insulating film of base plate

Patent metadata

Field	Value
Publication number	US-10121732-B2
Application number	US-201715784472-A
Country	US
Kind code	B2
Filing date	Oct 16, 2017
Priority date	Feb 3, 2017
Publication date	Nov 6, 2018
Grant date	Nov 6, 2018

Abstract

A semiconductor device includes: a base plate including a metallic base plate and an insulating film provided on the metallic base plate; a semiconductor chip provided on the base plate; a control board disposed above the semiconductor chip; and a relay terminal connected to a signal electrode of the semiconductor chip through a signal line wire, extending to the control board, and connected to the control board, wherein the relay terminal is directly fixed to the insulating film of the base plate.

First claim

The invention claimed is:

1. A semiconductor device comprising:
a base plate including a metallic base plate and an insulating film provided on the metallic base plate;
a semiconductor chip provided on the base plate;
a control board disposed above the semiconductor chip; and
a relay terminal connected to a signal electrode of the semiconductor chip through a signal line wire, extending to the control board, and connected to the control board,
wherein the relay terminal is directly fixed to the insulating film of the base plate.

2. The semiconductor device according to claim 1 , further comprising a main electrode terminal connected to a main electrode of the semiconductor chip through a main line wire and directly fixed to the insulating film of the base plate.

3. The semiconductor device according to claim 1 , comprising:
a circuit pattern provided on an upper surface of the base plate; and
a main line wire connecting a main electrode of the semiconductor chip to the circuit pattern,
wherein the relay terminal is disposed on an inner side of the base plate than the circuit pattern on an upper surface of the base plate.

4. The semiconductor device according to claim 1 , wherein the relay terminal includes a plurality of terminals disposed in a zig-zag manner on an upper surface of the base plate.

5. The semiconductor device according to any claim 1 , wherein the semiconductor chip is made of a wide-band-gap semiconductor.

6. An electric power conversion device comprising:
a main conversion circuit including the semiconductor device according to claim 1 , converting input power and outputting the converted power, and
a control circuit outputting a control signal for controlling the main conversion circuit to the main conversion circuit.

Assignees

• Mitsubishi Electric Corp

Inventors

• Kimura Yoshitaka
• Otsubo Yoshitaka

Classifications

• H10W90/755

  between a chip and a laterally-adjacent insulating package substrate, interpose or RDL · CPC title

• H10W90/753

  between laterally-adjacent chips · CPC title

• H10W90/00 Primary

  Package configurations · CPC title

• H10W70/6875 Primary

  being on a metallic substrate, e.g. insulated metal substrates [IMS] · CPC title

• H10W72/5449

  not being orthogonal to a side surface of the chip, e.g. fan-out arrangements · CPC title