Dielectric, capacitor, electrical circuit, circuit board, and apparatus
US-2024047137-A1 · Feb 8, 2024 · US
Dielectric thin film and electronic component
US10121592B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10121592-B2 |
| Application number | US-201715459609-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 15, 2017 |
| Priority date | Mar 22, 2016 |
| Publication date | Nov 6, 2018 |
| Grant date | Nov 6, 2018 |
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- Title
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Abstract
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A dielectric thin film containing MgO as a main component, wherein the dielectric thin film is composed of a columnar structure group containing at least one columnar structure A constructed by single crystal and at least one columnar structure B constructed by polycrystal, respectively, and in the cross section of the direction perpendicular to the dielectric thin film, when the area occupied by the columnar structure A is set as C A and the area occupied by the columnar structure B is set as C B , the relationship between C A and C B satisfies 0.4≤C B /C A ≤1.1.
First claim
Opening claim text (preview).
What is claimed is: 1. A dielectric thin film comprising MgO as a main component, wherein the dielectric thin film is composed of a columnar structure group containing at least one columnar structure A constructed by single crystal and at least one columnar structure B constructed by polycrystal, respectively, and in the cross section of the direction perpendicular to the dielectric thin film, when the area occupied by the columnar structure A is set as C A and the area occupied by the columnar structure B is set as C B , the relationship between C A and C B satisfies 0.4≤C B /C A ≤1.1. 2. The dielectric thin film according to claim 1 , wherein at least two columnar structures B are present, and the columnar structure B is a columnar structure including at least one columnar structure B + with one or more triple junctions, and the columnar structure B + is included in an amount of 50% or more of the area C B occupied by the columnar structure B. 3. An electronic component comprising the dielectric thin film according to claim 1 . 4. An electronic component comprising the dielectric thin film according to claim 2 .
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Inventors
Classifications
characterised by the ceramic dielectric material (H01G4/1272, H01G4/1281 take precedence) · CPC title
Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy · CPC title
Ceramic dielectrics {(H01G4/085 takes precedence)} · CPC title
Pressing at temperatures other than sintering temperatures · CPC title
Constructional details · CPC title
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- What does patent US10121592B2 cover?
- A dielectric thin film containing MgO as a main component, wherein the dielectric thin film is composed of a columnar structure group containing at least one columnar structure A constructed by single crystal and at least one columnar structure B constructed by polycrystal, respectively, and in the cross section of the direction perpendicular to the dielectric thin film, when the area occupied …
- Who is the assignee on this patent?
- Tdk Corp
- What technology area does this patent fall under?
- Primary CPC classification H01G4/10. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Nov 06 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).