Nanoparticle multilayer film

Patent metadata

Field	Value
Publication number	US-10121565-B2
Application number	US-201414556344-A
Country	US
Kind code	B2
Filing date	Dec 1, 2014
Priority date	Feb 27, 2014
Publication date	Nov 6, 2018
Grant date	Nov 6, 2018

Abstract

A nanoparticle multilayer thin film is provided in which nanoparticles which are not electrically insulated from each other are spaced apart from one another at a reduced distance. The nanoparticle multilayer film includes: at least one first nanoparticle layer including first nanoparticles that are surface-modified with a cationic metal-chalcogenide compound; and at least one second nanoparticle layer including second nanoparticles that are surface-modified with an anionic metal-chalcogenide compound, wherein the first nanoparticle layer and the second nanoparticle layer are alternately stacked upon one another.

First claim

What is claimed is:

1. A nanoparticle multilayer film comprising:
at least one first nanoparticle layer comprising first nanoparticles, said first nanoparticles being surface-modified with a cationic metal-chalcogenide compound; and
at least one second nanoparticle layer comprising second nanoparticles, said second nanoparticles being surface-modified with an anionic metal-chalcogenide compound,
wherein the first nanoparticle layer and the second nanoparticle layer are alternately stacked upon one another, and
wherein the cationic metal-chalcogenide compound and the anionic metal-chalcogenide compound are covalently bonded molecules, and wherein the cationic metal-chalcogenide compound is directly bonded to the surface of the first nanoparticles.

2. The nanoparticle multilayer film of claim 1 , wherein the cationic metal-chalcogenide compound is selected from the group consisting of Zn 2 S 2 , Zn 2 Se 2 , Zn 2 Te 2 , Cu 2 S 2 , Cu 2 Se 2 , Cu 2 Te 2 , Mn 2 S 2 , Mn 2 Se 2 , Mn 2 Te 2 , Fe 2 S 2 , Fe 2 Se 2 , Fe 2 Te 2 , Co 2 S 2 , Co 2 Se 2 , Co 2 Te 2 , and a mixture thereof.

3. The nanoparticle multilayer film of claim 1 , wherein the nanoparticle of the first nanoparticle layer and the nanoparticle of the second nanoparticle layer are each independently quantum dots, metal nanocrystals, magnetic nanocrystals, oxide nanocrystals, nanowires, or nanoplates.

4. The nanoparticle multilayer film of claim 3 , wherein the quantum dots comprise CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, CdHgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe; GaN, GaP, GaAs, GaSb, AN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb; SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, SnPbSTe; Si, Ge, SiC, SiGe, or a combination thereof.

5. The nanoparticle multilayer film of claim 1 , wherein the anionic metal-chalcogenide compound is selected from the group consisting of Sn 2 S 6 , Sn 2 Se 6 , In 2 Se 4 , In 2 Te 3 , Ga 2 Se 3 , CuInSe 2 , Cu 7 S 4 , Hg 3 Se 4 , Sb 2 Te 3 , ZnTe, and a combination thereof.

6. The nanoparticle multilayer film of claim 1 , wherein the nanoparticle of the first nanoparticle layer and the nanoparticle of the second nanoparticle layer are same to or different from each other.

7. The nanoparticle multilayer film of claim 1 , wherein the plurality of first nanoparticle layers include the same or different nanoparticle.

8. The nanoparticle multilayer film of claim 1 , wherein the plurality of second nanoparticle layers include the same or different nanoparticle.

9. The nanoparticle multilayer film of claim 1 , wherein the plurality of first nanoparticle layers include the same or different cationic metal-chalcogenide compound.

10. The nanoparticle multilayer film of claim 1 , wherein the plurality of second nanoparticle layers include the same or different anionic metal-chalcogenide compound.

11. The nanoparticle multilayer film of claim 1 , wherein the cationic metal-chalcogenide compound and the anionic metal-chalcogenide compound are electrically semiconductive or electrically conductive.

12. The nanoparticle multilayer film of claim 1 , wherein the first nanoparticle layer and the second nanoparticle layer are in contact with each other.

13. The nanoparticle multilayer film of claim 1 , wherein an average distance between adjacent nanoparticles in the first nanoparticle layer and in the second nanoparticle layer is less than 1 nm.

Assignees

• Samsung Electronics Co Ltd
• Univ Ajou Ind Academic Coop Found

Inventors

• Cho Kyungsang
• Kim Sangwook
• Choi Donghyeok

Classifications

• C03C17/347

  comprising a sulfide or oxysulfide · CPC title

• B82Y30/00

  Nanotechnology for materials or surface science, e.g. nanocomposites · CPC title

• B01J13/02

  Making microcapsules or microballoons {(for medical preparations A61K9/50)} · CPC title

• H01B1/10

  sulfides · CPC title

• H01B1/06 Primary

  mainly consisting of other non-metallic substances · CPC title