Multiple FET non-volatile memory with default logical state
US-9589639-B1 · Mar 7, 2017 · US
US10121530B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10121530-B2 |
| Application number | US-201715587713-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 5, 2017 |
| Priority date | Nov 23, 2015 |
| Publication date | Nov 6, 2018 |
| Grant date | Nov 6, 2018 |
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Official abstract text for this publication.
A method and circuit for implementing Electronic Fuse (eFuse) visual security of stored data using embedded dynamic random access memory (EDRAM), and a design structure on which the subject circuit resides are provided. The circuit includes EDRAM and eFuse circuitry having an initial state of a logical 0. The outputs of the eFuse and an EDRAM are connected through an exclusive OR (XOR) gate, enabling EDRAM random data to be known at wafer test and programming of the eFuse to provide any desired logical value out of the XORed data combination.
Opening claim text (preview).
What is claimed is: 1. A method for implementing Electronic Fuse (eFuse) visual security of stored data using embedded dynamic random access memory (EDRAM), said method comprising: providing an EDRAM; providing an eFuse having an initial state of a logical 0; said EDRAM and said eFuse having a same bit count; and providing an exclusive OR (XOR) gate receiving respective outputs of said eFuse and said EDRAM, said XOR gate providing an output data combination enabling EDRAM random data to be known at wafer test; and enabling said eFuse to be programmed to provide any logical value out of the output data combination, generating a control signal indicating EDRAM data ready for being read with filtering by said eFuse via said XOR gate. 2. The method as recited in claim 1 includes generating said control signal using a busy signal from said eFuse to indicate that an eFuse read has not completed. 3. The method as recited in claim 1 wherein said eFuse has a busy signal used to indicate that an eFuse read has not completed, and includes using said eFuse busy signal to provide said control signal for reading said XOR gate. 4. The method as recited in claim 1 includes providing a capture latch receiving respective outputs of said XOR gate, said capture latch receiving said control signal for reading said XOR gate.
Safety or protection circuits, e.g. for preventing inadvertent or unauthorised reading or writing; Status cells; Test cells (protection of memory contents during checking or testing G11C29/52) · CPC title
EXCLUSIVE-OR circuits, i.e. giving output if input signal exists at only one input; COINCIDENCE circuits, i.e. giving output only if all input signals are identical · CPC title
Auxiliary circuits, e.g. for writing into memory · CPC title
using electrically-fusible links · CPC title
Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor · CPC title
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