Infrared sensor having improved sensitivity and reduced heat generation

Patent metadata

Field	Value
Publication number	US-10119865-B2
Application number	US-201414895927-A
Country	US
Kind code	B2
Filing date	May 30, 2014
Priority date	Jun 10, 2013
Publication date	Nov 6, 2018
Grant date	Nov 6, 2018

Abstract

An infrared sensor, which achieves a low manufacturing cost, or has high sensitivity, or in which an increase in heat capacity is reduced, is provided. The infrared sensor includes a first infrared absorbing portion, an infrared sensing portion for sensing infrared rays based on infrared rays absorbed by the first infrared absorbing portion, and a plurality of protrusions including metal and disposed apart from each other on a surface of the first infrared absorbing portion. Since an absorption rate of infrared rays is improved, sensitivity can be improved, or an increase in heat capacity can be reduced.

First claim

The invention claimed is:

1. An infrared sensor comprising:
a semiconductor substrate;
a first infrared absorbing portion provided on the semiconductor substrate, having a first surface facing the semiconductor substrate and a second surface opposite to the first surface;
an infrared sensing portion for sensing infrared rays based on infrared rays absorbed by the first infrared absorbing portion;
a plurality of protrusions including metal or a silicon nitride film, and disposed apart from each other on the second surface of the first infrared absorbing portion; and
a second infrared absorbing portion, which is formed so as to contact and cover a top surface and a side surface of the plurality of protrusions, and which is provided on top surfaces of the first infrared absorbing portion,
wherein spaces between adjacent protrusions of the plurality of protrusions are wholly filled with the second infrared absorbing portion such that there is no gap between adjacent protrusions.

2. The infrared sensor of claim 1 , wherein
the first infrared absorbing portion is provided with a slit in a plan view, and all of the plurality of protrusions are surrounded by the slit.

3. The infrared sensor of claim 2 , wherein a distance between neighboring protrusions of the protrusions and the slit is longer than a distance between the neighboring protrusions.

4. The infrared sensor of claim 1 , wherein the first infrared absorbing portion is provided with a linear first slit in a plan view, and
a part of the plurality of protrusions are disposed along the first slit.

5. The infrared sensor of claim 4 , wherein the first infrared absorbing portion is provided with a C-shaped second slit in a plan view,
the first infrared absorbing portion is provided with a linear third slit in a plan view,
an extending direction of the first slit is perpendicular to an extending direction of the third slit, and
a part of the protrusions are disposed along the third slit.

6. The infrared sensor of claim 1 , wherein the first infrared absorbing portion is provided with a linear first slit in a plan view,
the first infrared absorbing portion is provided with a C-shaped second slit in a plan view, and
a part of the plurality of protrusions are disposed to be surrounded by the second slit.

7. The infrared sensor of claim 6 , wherein a part of the plurality of protrusions are disposed along the second slit.

8. The infrared sensor of claim 6 , wherein the first infrared absorbing portion is provided with a linear third slit in a plan view,
an extending direction of the first slit is perpendicular to an extending direction of the third slit, and
a part of the protrusions are disposed along the third slit.

9. The infrared sensor of claim 1 , wherein the plurality of protrusions are disposed at intervals shorter than a wavelength of infrared rays absorbed by the first infrared absorbing portion.

10. The infrared sensor of claim 1 , wherein the first infrared absorbing portion includes an interlayer insulating film, and the plurality of protrusions are disposed on the interlayer insulating film.

11. An infrared sensor comprising:
a semiconductor substrate;
a first infrared absorbing portion provided on the semiconductor substrate, having a first surface facing the semiconductor substrate and second surface opposite to the first surface;
an infrared sensing portion for sensing infrared rays based on infrared rays absorbed by the first infrared absorbing portion;
a plurality of protrusions including metal or a silicon nitride film, and disposed apart from each other on the second surface of the first infrared absorbing portion; and
a single second infrared absorbing portion, which is formed so as to contact and cover an entire top surface and an entire side surface of each of the plurality of protrusions and a top surface of the first infrared absorbing portion,
wherein the plurality of protrusions and the single second infrared absorbing portion are made of different materials.

12. The infrared sensor of claim 11 , wherein the plurality of protrusions are made of metal including aluminum,
the second infrared absorbing portion is made of a non-doped silicate glass or phosphorus silicate glass.

13. The infrared sensor of claim 11 , wherein the first infrared absorbing portion is provided with a slit in a plan view, and all of the plurality of protrusions are surrounded by the slit.

14. The infrared sensor of claim 13 , wherein a distance between the protrusions and the slit is longer than a distance between neighboring protrusions of the neighboring protrusions.

15. The infrared sensor of claim 11 , wherein the first infrared absorbing portion is provided with a linear first slit in a plan view, and
a part of the plurality of protrusions are disposed along the first slit.

16. The infrared sensor of claim 15 , wherein the first infrared absorbing portion is provided with a C-shaped second slit in a plan view,
the first infrared absorbing portion is provided with a linear third slit in a plan view,
an extending direction of the first slit is perpendicular to an extending direction of the third slit, and
a part of the protrusions are disposed along the third slit.

17. The infrared sensor of claim 11 , wherein the first infrared absorbing portion is provided with a linear first slit in a plan view,
the first infrared absorbing portion is provided with a C-shaped second slit in a plan view, and
a part of the plurality of protrusions are disposed to be surrounded by the second slit.

18. The infrared sensor of claim 17 , wherein a part of the plurality of protrusions are disposed along the second slit.

19. The infrared sensor of claim 17 , wherein the first infrared absorbing portion is provided with a linear third slit in a plan view,
an extending direction of the first slit is perpendicular to an extending direction of the third slit, and
a part of the protrusions are disposed along the third slit.

20. The infrared sensor of claim 11 , wherein the plurality of protrusions are disposed at intervals shorter than a wavelength of infrared rays absorbed by the first infrared absorbing portion.

21. The infrared sensor of claim 11 , wherein the first infrared absorbing portion includes an interlayer insulating film, and the plurality of protrusions disposed on the interlayer insulating film.

Assignees

• Panasonic Ip Man Co Ltd

Inventors

• Kakimoto Katsumi
• Saito Masaaki
• Hagihara Yosuke
• Okudo Takafumi
• Nishijima Yoichi
• Osabe Ryo
• Ushiyama Naoki
• Akai Sumio
• Shibata Yasufumi

Classifications

• G01J5/0025

  Living bodies (ear thermometers G01J5/0011; detecting, measuring or recording for diagnostic purposes A61B5/00) · CPC title

• G01J5/045

  Sealings; Vacuum enclosures; Encapsulated packages; Wafer bonding structures; Getter arrangements (getter arrangements per se H10W76/48, H10P36/03) · CPC title

• G01J5/024

  Special manufacturing steps or sacrificial layers or layer structures · CPC title

• G01J5/20

  using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices · CPC title

• G01J2005/106

  Arrays · CPC title