Alkoxide compound and raw material for forming thin film

Patent metadata

Field	Value
Publication number	US-10118940-B2
Application number	US-201214115495-A
Country	US
Kind code	B2
Filing date	May 15, 2012
Priority date	Aug 2, 2011
Publication date	Nov 6, 2018
Grant date	Nov 6, 2018

Abstract

An alkoxide compound represented by the following formula (I), and a raw material for thin film formation containing the alkoxide compound. In the formula, R 1 represents a linear or branched alkyl group having 2 to 4 carbon atoms, and R 2 and R 3 each represent a linear or branched alkyl group having 1 to 4 carbon atoms. In the formula (I), R 1 is preferably an ethyl group. It is also preferred that one or both of R 2 and R 3 be an ethyl group. The raw material for thin film formation including an alkoxide compound represented by general formula (I) is preferably used as a raw material for chemical vapor deposition.

First claim

The invention claimed is:

1. A raw material for film formation comprising an alkoxide compound represented by
one of the following compounds:

2. The raw material for thin film formation according to claim 1 to be used as a raw material for chemical vapor deposition.

3. The raw material for thin film formation according to claim 2 , the raw material comprising a precursor comprising the alkoxide compound and optionally a precursor excluding the alkoxide compound, wherein the precursor excluding the alkoxide compound is in a proportion of from 0 to 10 mol per mol of the alkoxide compound, and the raw material is delivered and fed by a vapor delivery method or a liquid delivery method in thin film production.

4. The raw material for thin film formation according to claim 2 , the raw material comprising an organic solvent and a precursor comprising the alkoxide compound and optionally a precursor excluding the alkoxide compound, wherein the content of the precursor comprising the alkoxide compound is 0.01 to 2.0 mol/liter, the precursor excluding the alkoxide compound is in a proportion of from 0 to 10 mol per mol of the alkoxide compound, and the raw material is delivered and fed by a liquid delivery method in thin film production.

5. The raw material for thin film formation according to claim 2 , the raw material comprising a precursor comprising the alkoxide compound and a precursor excluding the alkoxide compound, wherein the precursor excluding the alkoxide compound is in a proportion of from 0 to 10 mol per mol of the alkoxide compound, and the raw material is delivered and fed by a vapor delivery method or a liquid delivery method in thin film production.

6. The raw material for thin film formation according to claim 2 , the raw material comprising a precursor comprising the alkoxide compound, and the raw material is delivered and fed by a vapor delivery method or a liquid delivery method in thin film production.

7. The raw material for thin film formation according to claim 1 , the raw material comprising an organic solvent and a precursor comprising the alkoxide compound and a precursor excluding the alkoxide compound, wherein the content of the precursor comprising the alkoxide compound is 0.01 to 2.0 mol/liter, the precursor excluding the alkoxide compound is in a proportion of from 0 to 10 mol per mol of the alkoxide compound, and the raw material is delivered and fed by a liquid delivery method in thin film production.

8. The raw material for film formation according to claim 1 , wherein the alkoxide compound is in a liquid state under room temperature and room pressure.

9. The raw material for film formation according to claim 1 , further comprising at least one solvent selected from the group consisting of ethyl acetate, butyl acetate, methoxyethyl acetate, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, diethyleneglycol, tetrahydrofuran, tetrahydropyran, ethylene glycol dimethyl ether, diethylene glycol dimethyl ether, triethylene glycol dimethyl ether, dibutyl ether, dioxane, methyl butyl ketone, methyl isobutyl ketone, ethyl butyl ketone, dipropyl ketone, diisobutyl ketone, methyl amyl ketone, cyclohexanone, methylcyclohexanone, hexane, cyclohexane, methylcyclohexane, dimethylcyclohexane, ethylcyclohexane, heptane, octane, toluene, and xylene 1-cyanopropane, 1-cyanobutane, 1-cyanohexane, cyanocyclohexane, cycanobenzene, 1,3-dicyanopropane, 1,4-dicyanobutane, 1,6-dicyanohexane, 1,4-dicyanocyclohexane, 1,4-dicyanobenzene, pyridine and lutidine.

10. The raw material for film formation according to claim 9 , wherein a total amount of the alkoxide compound and other precursor(s) in the organic solvent is 0.01 to 2.0 mol/liter.

11. The raw material for film formation according to claim 9 , wherein a total amount of the alkoxide compound and other precursor(s) in the organic solvent is 0.05 to 1.0 mol/liter.

12. The raw material for film formation according to claim 1 , wherein the alkoxide compound is the Compound No. 4 having a 50% mass loss temperature of 195° C. and a boiling point of 102° C. at 120 Pa:

13. A raw material for film formation comprising an alkoxide compound represented by the following:

having a 50% mass loss temperature of 195° C. and a boiling point of 102° C. at 120 Pa.

Assignees

• Wada Senji
• Saito Akio
• Yoshino Tomoharu
• Adeka Corp

Inventors

• Wada Senji
• Saito Akio
• Yoshino Tomoharu

Classifications

• H10P14/42

  using a gas or vapour · CPC title

• C23C16/45553

  characterized by the use of precursors specially adapted for ALD · CPC title

• C23C16/406

  of iron group metals · CPC title

• C07C215/08 Primary

  with only one hydroxy group and one amino group bound to the carbon skeleton · CPC title

• C23C16/06

  characterised by the deposition of metallic material · CPC title