Systems and methods for welding workpieces using a laser beam and optical reflectors
US-2017182592-A1 · Jun 29, 2017 · US
US10118222B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10118222-B2 |
| Application number | US-201514717122-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 20, 2015 |
| Priority date | Mar 16, 2004 |
| Publication date | Nov 6, 2018 |
| Grant date | Nov 6, 2018 |
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The present invention relates to a process for the bonding of material for the production of three-dimensional objects by selective heating via a laser of wavelength from 100 to 3000 nm. The beam spot may be a focused or unfocused beam spot, or may indeed be spread, as is the case with the diode laser, where the bars may have a stacked arrangement. The selectivity of the melting process is achieved via the application of an absorber to certain subregions of a layer composed of a pulverulent substrate, and then heating of the absorber by laser radiation of wavelength from 100 to 3000 nm. The heated absorber transfers the energy present therein to its surrounding pulverulent substrate, which is melted thereby and, after cooling, has firm cohesive bonding.
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The invention claimed is: 1. An apparatus for layer-by-layer production of a three-dimensional object, the apparatus comprising: a movable apparatus for layer-by-layer application of at least one pulverulent substrate to an operating platform or to a previously applied layer of a treated or untreated pulverulent substrate which may be present on the operating platform; an apparatus movable in the x, y plane configured to apply a material comprising an absorber that absorbs laser radiation having a wavelength within a range from 100 to 3,000 nm, and optionally at least one other additive, to selected regions of a layer of the pulverulent substrate; and an energy source comprising a laser emitting radiation having a wavelength within a range from 100 to 3,000 nm, wherein: the energy source is an unfocused laser beam directed to an entire powder surface applied to the operating platform or to the previously applied layer; the unfocused laser beam is directed to the entire powder surface at an irradiation velocity from 10 to 10,000 mm/s; and the laser is a diode laser in which the unfocused laser beam includes beams having a rectangular area. 2. The apparatus of claim 1 , wherein the energy source is a diode laser emitting radiation having a wavelength within a range from >2,100 to 3,000 nm. 3. The apparatus of claim 1 , wherein the wavelength is within a range from 800 to 1,070 nm. 4. The apparatus of claim 1 , wherein the wavelength is within a range from 1,900 to 2,100 nm. 5. The apparatus of claim 1 , further comprising a storage vessel for an initial charge of untreated pulverulent substrate. 6. The apparatus of claim 1 , further comprising a temperature control unit. 7. The apparatus of claim 1 , further comprising a cooling unit. 8. The apparatus of claim 1 , wherein the laser beam is the only laser source. 9. The apparatus of claim 1 , wherein the pulverulent substrate does not absorb, or insufficiently absorbs, the laser radiation compared to the material comprising the absorber. 10. The apparatus of claim 1 , wherein the absorber absorbs laser radiation and dissipates absorbed energy in the form of heat to a surrounding substrate, thereby bonding, via fusion or sintering, regions of the substrate in the applied layer or layer(s). 11. The apparatus of claim 1 , further comprising an ink jet printer head or a printing head employing a piezoelectric effect or a bubble-jet principle. 12. The apparatus of claim 1 , further comprising a controller for controlling selective application of the material comprising the absorber. 13. The apparatus of claim 1 , further comprising: an operating platform or a substrate comprising regions of laser treated pulverulent substrate and regions of untreated pulverulent substrate; and, optionally an apparatus for removing the untreated pulverulent substrate. 14. The apparatus of claim 1 , further comprising: an operating platform or a substrate comprising regions of laser treated pulverulent substrate and regions of untreated pulverulent substrate; and an apparatus for removing the untreated pulverulent substrate. 15. The apparatus of claim 14 , wherein the apparatus for removing the untreated pulverulent substrate is a sieving apparatus.
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