Method for forming a virtual germanium substrate using a laser

Patent metadata

Field	Value
Publication number	US-10115854-B2
Application number	US-201515508975-A
Country	US
Kind code	B2
Filing date	Sep 4, 2015
Priority date	Sep 4, 2014
Publication date	Oct 30, 2018
Grant date	Oct 30, 2018

Abstract

The present disclosure provides a method of manufacturing a semiconductor device. Furthermore the present disclosure provides a photovoltaic device and a light emitting diode manufactured in accordance with the method. The method comprises the steps of forming a germanium layer using deposition techniques compatible with high-volume, low-cost manufacturing, such as magnetron sputtering, and exposing the germanium layer to laser light to reduce the amount of defects in the germanium layer. After the method is performed the germanium layer can be used as a virtual germanium substrate for the growth of III-V materials.

First claim

The claims as defined in the invention are as follows:

1. A method for manufacturing a semiconductor device comprising the steps of:
providing a substrate;
forming a germanium layer over the substrate, the germanium layer having a concentration of lattice defects;
depositing a dielectric layer onto the germanium layer; thereafter
exposing a region of the germanium layer to laser light through the dielectric layer; thereafter
removing the dielectric layer; and thereafter
forming at least one semiconductor device on a surface portion of the exposed region of the germanium layer comprising growing a plurality of layers comprising III-V compound materials on the formed germanium layer;
wherein the step of exposing the region of the germanium layer to laser light comprises: generating a continuous-wave laser beam and directing the continuous-wave laser beam towards a first edge of the germanium layer and laterally moving the laser beam along the length of the germanium layer from the first edge to a second edge.

2. The method in accordance with claim 1 wherein the concentration of lattice defects in the germanium layer after the method is performed is less than 10 7 defects/cm 2 .

3. The method in accordance with claim 1 wherein the step of exposing the region of the germanium layer to laser light is conducted such that at least a portion of the region of the germanium layer melts during exposure.

4. The method in accordance with claim 3 wherein the melted portion comprises the surface portion.

5. The method in accordance with claim 3 wherein the germanium layer forms an interface with the substrate and the melted portion extends from the surface portion to the interface.

6. The method in accordance with claim 3 wherein the germanium layer forms an interface with the substrate and the melted portion extends only partially into the region of the germanium layer without reaching the interface.

7. The method in accordance with claim 1 wherein the step of forming a germanium layer comprises the step of sputtering Ge, from a sputtering target containing Ge, onto the substrate.

8. The method in accordance with claim 1 wherein the thickness of the dielectric layer is selected based on the wavelength of the laser light.

9. The method in accordance with claim 1 wherein the method further comprises the step of moving the laser beam along the germanium layer from the first portion to a second portion at a velocity comprised between 10 mm/min and 1000 mm/min.

10. The method in accordance with claim 1 wherein the portion of the germanium laser exposed to the laser beam temporary melts, while the portion is exposed to the laser beam, and quickly recrystallises after the laser beam moves away from the portion.

11. The method in accordance with claim 1 wherein the region of the germanium layer is exposed to the laser beam for an overall time between 10 ms and 500 ms.

12. The method in accordance with claim 1 wherein the laser beam energy density is between 80 J/cm 2 and 350 J/cm 2 .

13. The method in accordance with claim 1 wherein the method further comprises the step of heating the substrate and the germanium layer to a temperature comprised between 400° C. and 700° C. during the exposure of a region of the germanium layer to laser light.

14. The method in accordance with claim 1 wherein the substrate is a silicon crystalline wafer with a crystallographic orientation.

15. The method in accordance with claim 1 wherein the plurality of layers comprising III-V compound materials form a multiple junction III-V solar cell with an energy conversion efficiency above 30%.

16. The method in accordance with claim 1 wherein the scanning of the continuous-wave laser beam on the germanium layer is conducted in a manner such that the concentration of lattice defects at the surface portion is reduced.

Assignees

• Newsouth Innovations Pty Ltd
• Shin Shin Natural Gas Co Ltd
• Epistar Corp

Inventors

• Hao Xiaojing
• Green Martin Andrew
• Liu Ziheng
• Li Wei
• Ho-Baillie Anita Wing Yi

Classifications

• H10P14/3814

  Continuous wave laser beam · CPC title

• H10P14/3411

  Silicon, silicon germanium or germanium · CPC title

• H10P14/2905

  Silicon, silicon germanium or germanium · CPC title

• H10P14/382

  Scanning of a beam · CPC title

• H10P14/22

  using physical deposition, e.g. vacuum deposition or sputtering · CPC title