Solid-state imaging device and electronic apparatus

Patent metadata

Field	Value
Publication number	US-10115752-B2
Application number	US-201615541105-A
Country	US
Kind code	B2
Filing date	Jan 8, 2016
Priority date	Jan 22, 2015
Publication date	Oct 30, 2018
Grant date	Oct 30, 2018

Abstract

The present technology relates to a solid-state imaging device that can achieve a higher resolution while increasing sensitivity, and an electronic apparatus. In a pixel array unit, pixels are two-dimensionally arranged, and the pixels are formed with a combination of: a first pixel that performs photoelectric conversion on light of a first color component with a first photoelectric conversion unit, and photoelectric conversion on light of a third color component with a second photoelectric conversion unit, the light of the third color component having passed through a first color filter and the first photoelectric conversion unit, the first color filter being designed to pass light of a second color component; a second pixel that performs photoelectric conversion on light of the first color component with a first photoelectric conversion unit, and photoelectric conversion on light of a fifth color component with a second photoelectric conversion unit, the light of the fifth color component having passed through a second color filter and the first photoelectric conversion unit, the second color filter being designed to pass light of a fourth color component; and a third pixel that performs photoelectric conversion on light of the first color component with a first photoelectric conversion unit, and photoelectric conversion on light of a sixth color component with a second photoelectric conversion unit, the light of the sixth color component having passed through the first photoelectric conversion unit. The first color component and the sixth color component are mixed, to generate white (W).

First claim

The invention claimed is:

1. A solid-state imaging device comprising:
a pixel array unit including a plurality of pixels, wherein the plurality of pixels are in a two-dimensionally array in the pixel array unit,
wherein each pixel of the plurality of pixels comprises:
a first photoelectric conversion unit configured to generate a signal charge based on light absorbed of a first color component; and
a second photoelectric conversion unit configured to generate a signal charge that corresponds to an amount of incident light,
wherein the second photoelectric conversion unit comprises a photodiode, and

wherein the plurality of pixels comprise:
a first pixel configured to:
photoelectrically convert light of the first color component with the first photoelectric conversion unit, and
photoelectrically convert light of a third color component with the second photoelectric conversion unit,
wherein the light of the third color component passes through a first color filter and the first photoelectric conversion unit, and
wherein light of a second color component passes through the first color filter;

a second pixel configured to:
photoelectrically convert the light of the first color component with the first photoelectric conversion unit, and
photoelectrically convert light of a fifth color component with the second photoelectric conversion unit,
wherein the light of the fifth color component passes through a second color filter and the first photoelectric conversion unit,
wherein light of a fourth color component passes through the second color filter; and

a third pixel configured to:
photoelectrically convert the light of the first color component with the first photoelectric conversion unit, and
photoelectrically convert light of a sixth color component with the second photoelectric conversion unit,
wherein the light of the sixth color component passes through the first photoelectric conversion unit; and
wherein the first color component and the sixth color component are mixed to generate white (W),
wherein:
 the first color filter and the second color filter are below the first photoelectric conversion unit on a light incident side;
 the first color component is green (G);
 the second color component is red (R);
 the third color component is red (R);
 the fourth color component is blue (B);
 the fifth color component is blue (B); and
 the sixth color component is magenta (Mg).

2. The solid-state imaging device according to claim 1 ,
wherein the pixel array unit comprises a plurality of 2×2 pixel matrices, and,
wherein, in each 2×2 pixel matrix of the plurality of 2×2 pixel matrices, the first pixel and the second pixel are diagonally positioned, and the third pixel is in the diagonal positions that are unoccupied by the first pixel and the second pixel.

3. The solid-state imaging device according to claim 1 , wherein:
the photodiode is a buried photodiode; and
a pixel transistor is on a wiring layer side of the photodiode.

4. The solid-state imaging device according to claim 1 , wherein
the third pixel is configured to detect phase difference,
the third pixel comprises a plurality of transparent electrodes,
each transparent electrode of the plurality of transparent electrodes is configured to extract a signal charge generated by the first photoelectric conversion unit.

5. The solid-state imaging device according to claim 1 , wherein
a first semiconductor substrate having a sensor circuit comprises the first photoelectric conversion unit and the second photoelectric conversion unit,
a second semiconductor substrate comprises a logic circuit,
a third semiconductor substrate comprises a memory circuit, and
the first semiconductor substrate, the second semiconductor substrate, and the third semiconductor substrate are stacked in an order.

6. A solid-state imaging device comprising:
a pixel array unit including a plurality of pixels, wherein the plurality of pixels are in a two-dimensionally array in the pixel array unit,
wherein each pixel of the plurality of pixels comprises:
a first photoelectric conversion unit configured to generate a signal charge based on light absorbed of a first color component; and
a second photoelectric conversion unit configured to generate a signal charge that corresponds to an amount of incident light,
wherein the second photoelectric conversion unit comprises a photodiode, and

wherein the plurality of pixels comprise:
a first pixel configured to:
photoelectrically convert light of the first color component with the first photoelectric conversion unit, and
photoelectrically convert light of a third color component with the second photoelectric conversion unit,
wherein the light of the third color component passes through a first color filter and the first photoelectric conversion unit, and
wherein light of a second color component passes through the first color filter;

a second pixel configured to:
photoelectrically convert the light of the first color component with the first photoelectric conversion unit, and
photoelectrically convert light of a fifth color component with the second photoelectric conversion unit,
wherein the light of the fifth color component passes through a second color filter and the first photoelectric conversion unit,
wherein light of a fourth color component passes through the second color filter; and

a third pixel configured to:
photoelectrically convert the light of the first color component with the first photoelectric conversion unit, and
photoelectrically convert light of a sixth color component with the second photoelectric conversion unit,
wherein the light of the sixth color component passes through the first photoelectric conversion unit; and
wherein the first color component and the sixth color component are mixed to generate white (W),
wherein:
 the first color filter and the second color filter are above the first photoelectric conversion unit on a light incident side;
 the first color component is green (G);
 the second color component is yellow (Ye);
 the third color component is red (R);
 the fourth color component is cyan (Cy);
 the fifth color component is blue (B); and
 the sixth color component is magenta (Mg).

7. The solid-state imaging device according to claim 6 ,
wherein the pixel array unit comprises a plurality of 2×2 pixel matrices, and,
wherein, in each 2×2 pixel matrix of the plurality of 2×2 pixel matrices, the first pixel and the second pixel are diagonally positioned, and the third pixel is in the diagonal positions that are unoccupied by the first pixel and the second pixel.

8. The solid-state imaging device according to claim 6 , wherein:
the photodiode is a buried photodiode; and
a pixel transistor is a wiring layer side of the photodiode.

9. The solid-state imaging device according to claim 6 , wherein
the third pixel is configured to detect phase difference,
the third pixel comprises a plurality of transparent electrodes,
each transparent electrode of the plurality of transparent electrodes is configured to extract a signal charge generated by the first photoelectric conversion unit.

10. The solid-state imaging device according to claim 6 , wherein
a first semiconductor substrate having a sensor circuit comprises the first photoelectric conversion unit and the second photoelectric conversion unit,
a second semiconductor substrate comprises a logic circuit,
a third semiconductor substrate comprises a memory circuit, and
the first semiconductor substrate, the second semiconductor substrate, and the third semiconductor substrate are stacked in an order.

11. An electronic

Assignees

• Sony Semiconductor Solutions Corp

Inventors

• Azami Kenji
• Otake Yusuke
• Wakano Toshifumi

Classifications

• H04N25/134

  based on three different wavelength filter elements · CPC title

• H04N25/70

  SSIS architectures; Circuits associated therewith · CPC title

• H04N25/76

  Addressed sensors, e.g. MOS or CMOS sensors · CPC title

• H04N23/12

  with one sensor only · CPC title

• H04N2209/045

  using mosaic colour filter · CPC title