Semiconductor device

Patent metadata

Field	Value
Publication number	US-10115656-B2
Application number	US-201715798971-A
Country	US
Kind code	B2
Filing date	Oct 31, 2017
Priority date	Dec 11, 2015
Publication date	Oct 30, 2018
Grant date	Oct 30, 2018

Abstract

Performance of a semiconductor device is improved. Graphene particles are mixedly added in a sealing resin covering a semiconductor chip. The graphene particles are thus mixedly added in the sealing resin, thereby thermal conduction of the sealing resin is improved, and thus radiation performance of the semiconductor device can be improved. Graphene is a sheet of sp 2 bonded carbon atoms having a monolayer thickness. Graphene has a structure where hexagonal lattices, each of which is formed of carbon atoms and bonds of the carbon atoms, are planarly spread. Graphene is preferably used as heat transfer filler because of its high thermal conductivity and light weight.

First claim

What is claimed is:

1. A semiconductor device comprising:
a substrate;
a semiconductor chip coupled onto the substrate via a bump electrode; and
an underfill material disposed between the substrate and the semiconductor chip,
wherein the underfill material contains a resin, potassium ions, and graphene particles.

2. The semiconductor device according to claim 1 , wherein particle size of the graphene particles is 1 to 100 μm.

3. The semiconductor device according to claim 1 , wherein the content of the graphene particles in the underfill material is 30 vol % or less.

Assignees

• Renesas Electronics Corp

Inventors

• Matsubara Yoshihisa

Classifications

• H10W72/522

  Multilayered bond wires, e.g. having a coating concentric around a core · CPC title

• H10W72/5524

  comprising aluminium [Al] · CPC title

• H10W72/5522

  comprising gold [Au] · CPC title

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title

• H10W72/0198

  batch processes · CPC title