Semiconductor device
US-2016233214-A1 · Aug 11, 2016 · US
Semiconductor device and semiconductor apparatus
US10115652B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10115652-B2 |
| Application number | US-201715430455-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 11, 2017 |
| Priority date | Mar 31, 2016 |
| Publication date | Oct 30, 2018 |
| Grant date | Oct 30, 2018 |
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- Title
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- Abstract
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Abstract
Official abstract text for this publication.
A semiconductor device includes a power device and a temperature detection diode. The semiconductor device has a device structure configured to insulate between a power lien of the power device and the temperature detection diode.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor device comprising: a power device; and a temperature detection diode, wherein the semiconductor device has a device structure configured to insulate between a power line of the power device and the temperature detection diode, and wherein the device structure comprises a resistor between a first conductive type electrode included in the power line of the power device and a cathode electrode of the temperature detection diode. 2. The semiconductor device according to claim 1 , wherein the resistor has a resistance value that a leakage current is equal to or lower than 10 μA. 3. The semiconductor device according to claim 1 , wherein the resistor is formed of polysilicon. 4. The semiconductor device according to claim 1 , wherein the temperature detection diode is formed over an oxide film in contact with a first conductive type layer included in the power line of the power device. 5. The semiconductor device according to claim 1 , wherein the temperature detection diode is formed inside silicon. 6. The semiconductor device according to claim 1 , wherein the power device is a IGBT (Insulated Gate Bipolar Transistor), a power MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor), a diode, or a thyristor.
Assignees
Inventors
Classifications
Chemical etching · CPC title
by chemical means · CPC title
into Group IV semiconductors · CPC title
of electrically active species · CPC title
of highly doped semiconductor materials, e.g. polysilicon layers or amorphous silicon layers · CPC title
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Frequently asked questions
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- What does patent US10115652B2 cover?
- A semiconductor device includes a power device and a temperature detection diode. The semiconductor device has a device structure configured to insulate between a power lien of the power device and the temperature detection diode.
- Who is the assignee on this patent?
- Renesas Electronics Corp
- What technology area does this patent fall under?
- Primary CPC classification H10W40/00. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Oct 30 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).