Method of etching semiconductor structures with etch gas

Patent metadata

Field	Value
Publication number	US-10115600-B2
Application number	US-201715685575-A
Country	US
Kind code	B2
Filing date	Aug 24, 2017
Priority date	Sep 9, 2013
Publication date	Oct 30, 2018
Grant date	Oct 30, 2018

Abstract

Disclosed are sulfur-containing compounds for plasma etching channel holes, gate trenches, staircase contacts, capacitor holes, contact holes, etc., in Si-containing layers on a substrate and plasma etching methods of using the same. The plasma etching compounds may provide improved selectivity between the Si-containing layers and mask material, less damage to channel region, a straight vertical profile, and reduced bowing in pattern high aspect ratio structures.

First claim

What is claimed is:

1. A method of depositing an etch-resistant polymer layer on a substrate, the method comprising:
introducing a vapor of a compound into a reaction chamber containing the substrate, the compound having a formula selected from the group consisting of: C 2 F 4 S 2 (CAS 1717-50-6), F 3 CSH (CAS 1493-15-8), F 3 C—CF 2 —SH (CAS 1540-78-9), F 3 C—CH 2 —SH (CAS 1544-53-2), CHF 2 —CF 2 —SH (812-10-2), CF 3 —CF 2 —CH 2 —SH (CAS 677-57-6), F 3 C—CH(SH)—CF 3 (CAS 1540-06-3), F 3 C—S—CF 3 (CAS 371-78-8), F 3 C—S—CHF 2 (CAS 371-72-2), F 3 C—CF 2 —S—CF 2 —CF 3 (CAS 155953-22-3), F 3 C—CF 2 —CF 2 —S—CF 2 —CF 2 —CF 3 (CAS 356-63-8), c(—S—CF 2 —CF 2 —CHF—CF 2 —) (CAS 1035804-79-5), c(—S—CF 2 —CHF—CHF—CF 2 —) (CAS 30835-84-8), c(—S—CF 2 —CF 2 —CF 2 —CF 2 —CF 2 —) (CAS 24345-52-6), c(—S—CFH—CF 2 —CF 2 —CFH—)(2 R, 5 R) (CAS 1507363-75-8), c(—S—CFH—CF 2 —CF 2 —CFH—)(2 R, 5 S) (CAS 1507363-76-9), and c(—S—CFH—CF 2 —CF 2 —CH 2 —) (CAS 1507363-77-0); and
plasma activating the compound to form the etch-resistant polymer layer on the substrate.

2. The method of claim 1 , wherein the compound is C 2 F 4 S 2 (CAS 1717-50-6).

3. The method of claim 1 , wherein the compound is selected from the group consisting of F 3 CSH (CAS 1493-15-8), F 3 C—CF 2 —SH (CAS 1540-78-9), F 3 C—CH 2 —SH (CAS 1544-53-2), CHF 2 —CF 2 —SH (812-10-2), CF 3 —CF 2 —CH 2 —SH (CAS 677-57-6), and F 3 C—CH(SH)—CF 3 (CAS 1540-06-3).

4. The method of claim 1 , wherein the compound is selected from the group consisting of F 3 C—S—CF 3 (CAS 371-78-8), F 3 C—S—CHF 2 (CAS 371-72-2), F 3 C—CF 2 —S—CF 2 —CF 3 (CAS 155953-22-3), and F 3 C—CF 2 —CF 2 —S—CF 2 —CF 2 —CF 3 (CAS 356-63-8).

5. The method of claim 1 , wherein the compound is selected from the group consisting of c(—S—CF 2 —CF 2 —CHF—CF 2 —) (CAS 1035804-79-5), c(—S—CF 2 —CHF—CHF—CF 2 —) (CAS 30835-84-8), c(—S—CF 2 —CF 2 —CF 2 —CF 2 —CF 2 —) (CAS 24345-52-6), c(—S—CFH—CF 2 —CF 2 —CFH—)(2 R, 5 R) (CAS 1507363-75-8), c(—S—CFH—CF 2 —CF 2 —CFH—)(2 R, 5 S) (CAS 1507363-76-9), and c(—S—CFH—CF 2 —CF 2 —CH 2 —) (CAS 1507363-77-0).

6. The method of claim 1 , wherein the etch-resistant polymer layer forms a S-containing polymer passivation layer on sidewalls of a pattern etch structure.

7. The method of claim 6 , wherein the pattern etch structure has an aspect ratio ranging from 10:1 to 100:1.

8. The method of claim 6 , wherein the pattern etch structure has an aspect ratio ranging from 60:1 to 100:1.

9. The method of claim 6 , wherein the pattern etch structure has a diameter ranging from approximately 40 nm to approximately 50 nm.

10. The method of claim 6 , wherein the passivation layer prevents ions and radicals from etching the sidewalls.

11. The method of claim 6 , wherein the etch-resistant polymer layer results in the pattern etch structure having a straight vertical profile with no bowing.

12. The method of claim 1 , further comprising introducing an inert gas into the reaction chamber.

13. The method of claim 12 , wherein the inert gas is selected from the group consisting of He, Ar, Xe, Kr, Ne, and combinations thereof.

14. A method of depositing an S-containing polymer passivation layer on a substrate, the method comprising:
introducing a vapor of a compound into a reaction chamber containing the substrate, the compound having a formula selected from the group consisting of: C 2 F 4 S 2 (CAS 1717-50-6), F 3 CSH (CAS 1493-15-8), F 3 C—CF 2 —SH (CAS 1540-78-9), F 3 C—CH 2 —SH (CAS 1544-53-2), CHF 2 —CF 2 —SH (812-10-2), CF 3 —CF 2 —CH 2 —SH (CAS 677-57-6), F 3 C—CH(SH)—CF 3 (CAS 1540-06-3), F 3 C—S—CF 3 (CAS 371-78-8), F 3 C—S—CHF 2 (CAS 371-72-2), F 3 C—CF 2 —S—CF 2 —CF 3 (CAS 155953-22-3), F 3 C—CF 2 —CF 2 —S—CF 2 —CF 2 —CF 3 (CAS 356-63-8), c(—S—CF 2 —CF 2 —CHF—CF 2 —) (CAS 1035804-79-5), c(—S—CF 2 —CHF—CHF—CF 2 —) (CAS 30835-84-8), c(—S—CF 2 —CF 2 —CF 2 —CF 2 —CF 2 —) (CAS 24345-52-6), c(—S—CFH—CF 2 —CF 2 —CFH—)(2 R, 5 R) (CAS 1507363-75-8), c(—S—CFH—CF 2 —CF 2 —CFH—)(2 R, 5 S) (CAS 1507363-76-9), and c(—S—CFH—CF 2 —CF 2 —CH 2 —) (CAS 1507363-77-0); and
producing fragments of the compound by activating a plasma to form the S-containing polymer passivation layer on the substrate.

15. The method of claim 14 , further comprising introducing an inert gas into the reaction chamber.

16. The method of claim 15 , wherein the inert gas is selected from the group consisting of He, Ar, Xe, Kr, Ne, and combinations thereof.

Assignees

• Air Liquide American
• Air Liquide

Inventors

• Gupta Rahul
• Pallem Venkateswara R
• Surla Vijay
• Anderson Curtis
• Stafford Nathan

Classifications

• H10P70/12

  by dry cleaning only (H10P70/52 takes precedence) · CPC title

• H10P50/695

  characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask · CPC title

• H10P50/283 Primary

  by chemical means · CPC title

• H10P50/268 Primary

  of silicon-containing layers · CPC title

• H10P50/246

  of Group III-V materials · CPC title