Device manufactured by room-temperature bonding, device manufacturing method, and room-temperature bonding apparatus

Patent metadata

Field	Value
Publication number	US-10112376-B2
Application number	US-201615149891-A
Country	US
Kind code	B2
Filing date	May 9, 2016
Priority date	May 30, 2006
Publication date	Oct 30, 2018
Grant date	Oct 30, 2018

Abstract

An inter-substrate material layer is formed between a first substrate and a second substrate to generate a bonding strength. A plurality of metal elements are present in the inter-substrate material layer. An interface element existence ratio of the plurality of metal elements is 0.07 or above. A device can be obtained in which substrates difficult to bond (for example, SiO 2 substrates) are bonded at room-temperature to have practical bonding strength.

First claim

The invention claimed is:

1. A method of manufacturing a device, comprising:
performing sputtering on a surface of a first substrate, such that sputtering ions directly emit to the first substrate and a second substrate;
attaching one or more metal elements onto the surface of said first substrate; and
bonding the second substrate to the surface of said first substrate at room temperature,
wherein the performing sputtering comprises sputtering ions missing the first substrate and the second substrate to emit to a metal emitter to sputter the metal emitter, and
wherein an interface element existence ratio of said one or more metal elements is 0.07 or above and 0.6 or below,
wherein the performing sputtering comprises sputtering ions to a substrate holding mechanism that supports the first and second substrates in a chamber, the substrate holding mechanism being made of metal, and wherein the substrate holding mechanism includes an upper stage that holds the first substrate and a lower stage that holds the second substrate.

2. The method according to claim 1 , wherein the interface element existence ratio of said one or more metal elements is 0.1 or above.

3. The method according to claim 2 , wherein the interface element existence ratio of said one or more metal elements is 0.2 or above.

4. The method according to claim 1 , further comprising:
performing the sputtering on a surface of said second substrate at the same time that the surface of said first substrate is sputtered.

5. The method according to claim 1 , wherein said performing is performed as the same time as said attaching.

6. The method according to claim 1 , wherein said performing comprises:
radiating accelerated particles to sputter the surface of said first substrate, and
said attaching comprises:
attaching said one or more metal elements on the surface of said first substrate, wherein said one or more metal elements are emitted from a metal emitter to which the accelerated particles are radiated.

7. The method according to claim 6 , wherein said metal emitter is at least one of a bonding apparatus, structural members and parts of a substrate holding mechanism a stage moving mechanism, and a substrate pressure welding mechanism disposed in said bonding apparatus.

8. The method according to claim 6 , wherein a parameter of the radiation of the particles is a velocity of the particles.

9. The method according to claim 6 , wherein a parameter of the radiation of the particles is a radiation time during which the particles are radiated.

10. The method according to claim 6 , wherein a parameter of the radiation of the particles is an amount of the particles radiated onto the surface of said first substrate per a unit time.

11. The method according to any of claim 1 , wherein a plurality of said metal elements are attached, and
said plurality of metal elements are a set of metal elements selected the group consisting of:
a set of iron and chromium,
a set of iron and aluminum,
a set of iron, chromium, and aluminum,
a set of iron, chromium, and nickel, and
a set of iron, chromium, nickel, and aluminum.

12. The method according to claim 9 , wherein the radiation time during which the particles are radiated is longer than 100 seconds and shorter than 600 seconds.

13. The method according to claim 12 , wherein a coupling energy is 0.5 J/m 2 or above.

Assignees

• Mitsubishi Heavy Ind Machine Tool Co Ltd
• Aist
• Mitsubishi Heavy Ind Machine Tool Co Ltd

Inventors

• Utsumi Jun
• Goto Takayuki
• Ide Kensuke
• Funayama Masahiro
• Takagi Hideki

Classifications

• B32B37/14

  characterised by the properties of the layers · CPC title

• B23K20/02 Primary

  by means of a press {; Diffusion bonding} · CPC title

• C23C14/58

  After-treatment · CPC title

• B23K20/22

  taking account of the properties of the materials to be welded · CPC title

• B32B38/0008 Primary

  Electrical discharge treatment, e.g. corona, plasma treatment; wave energy or particle radiation (heat treatment B32B38/0036) · CPC title