Power amplification system with reactance compensation

Patent metadata

Field	Value
Publication number	US-10110184-B2
Application number	US-201715487384-A
Country	US
Kind code	B2
Filing date	Apr 13, 2017
Priority date	Apr 13, 2016
Publication date	Oct 23, 2018
Grant date	Oct 23, 2018

Abstract

Power amplification system is disclosed. A power amplification system can include a Class-E push-pull amplifier including a transformer balun. The power amplification can further include a reactance compensation circuit coupled to the transformer balun. In some embodiments, the reactance compensation circuit is configured to reduce variation over frequency of a fundamental load impedance of the power amplification system.

First claim

What is claimed is:

1. A power amplification system comprising:
a Class-E push-pull amplifier including a transformer balun; and
a reactance compensation circuit coupled to the transformer balun, the reactance compensation circuit being configured to reduce variation over frequency of a fundamental load impedance of the power amplification system, and the reactance compensation circuit including a first capacitor coupled between the transformer balun and an output of the power amplification system and a second capacitor coupled between the transformer balun and a ground voltage.

2. The power amplification system of claim 1 wherein a leakage inductance of the transformer balun in series with a capacitance of the reactance compensation circuit forms a series resonant circuit having a reactance that increases with frequency.

3. The power amplification system of claim 1 wherein the reactance compensation circuit includes a DC blocking capacitance selected to reduce variation over frequency of the fundamental load impedance.

4. The power amplification system of claim 1 wherein the transformer balun has a coupling coefficient selected to reduce variation over frequency of the fundamental load impedance.

5. The power amplification system of claim 4 wherein the coupling coefficient is approximately −0.4.

6. The power amplification system of claim 1 wherein the transformer balun includes a first coil and a second coil, the first coil having a first tap coupled to a first differential path of the Class-E push-pull amplifier, a second tap coupled to a second differential path of the Class-E push-pull amplifier, and a third tap coupled to a supply voltage, the second coil having a fourth tap coupled, via the reactance compensation circuit, to a first output of the power amplification system and a fifth tap coupled, via the reactance compensation circuit, to a ground voltage.

7. The power amplification system of claim 6 wherein the second coil further has a sixth tap coupled, via the reactance compensation circuit, to a second output of the reactance compensation circuit.

8. The power amplification system of claim 7 wherein the first output is a 2G output and the second output is a 3G output.

9. The power amplification system of claim 7 further comprising a switch configured to couple either of the first output or the second output to the reactance compensation circuit.

10. The power amplification system of claim 1 wherein the Class-E push-pull amplifier includes a driver transistor coupled between an input of the power amplification system and a divider, a first differential transistor disposed between a first output of the divider and the transformer balun, and a second differential transistor disposed between a second output of the divider and the transformer balun.

11. The power amplification system of claim 10 further comprising one or more bias circuits configured to bias at least one of the driver transistor, the first differential transistor, or the second differential transistor.

12. The power amplification system of claim 10 wherein the divider includes a transformer.

13. The power amplification system of claim 12 further comprising a second-harmonic trap disposed between a first end and a second end of a first coil of the transformer.

14. A radio-frequency module comprising:
a packaging substrate configured to receive a plurality of components; and
a power amplification system implemented on the packaging substrate, the power amplification system including a Class-E push-pull amplifier including a transformer balun, the power amplification system further including a reactance compensation circuit coupled to the transformer balun, the reactance compensation circuit being configured to reduce variation over frequency of a load impedance of the power amplification system, and the reactance compensation circuit including a first capacitor coupled between the transformer balun and an output of the power amplification system and a second capacitor coupled between the transformer balun and a ground voltage.

15. The radio-frequency module of claim 14 wherein the radio-frequency module is a front-end module.

16. The radio-frequency module of claim 14 wherein a leakage inductance of the transformer balun in series with a capacitance of the reactance compensation circuit forms a series resonant circuit having a reactance that increases with frequency.

17. The radio-frequency module of claim 14 wherein the reactance compensation circuit includes a DC blocking capacitance selected to reduce variation over frequency of the fundamental load impedance.

18. A wireless device comprising:
a transceiver configured to generate an input radio-frequency (RF) signal;
a front-end module (FEM) in communication with the transceiver, the FEM including a packaging substrate configured to receive a plurality of components, the FEM further including a power amplification system implemented on the packaging substrate, the power amplification system configured to amplify the input RF signal to generate an output RF signal, the power amplification system including a Class-E push-pull amplifier including a transformer balun, the power amplification system further including a reactance compensation circuit coupled to the transformer balun, the reactance compensation circuit being configured to reduce variation over frequency of a load impedance of the power amplification system, and the reactance compensation circuit including a first capacitor coupled between the transformer balun and an output of the power amplification system and a second capacitor coupled between the transformer balun and a ground voltage; and
an antenna in communication with the FEM, the antenna configured to transmit the output RF signal.

19. The wireless device of claim 18 wherein a leakage inductance of the transformer balun in series with a capacitance of the reactance compensation circuit forms a series resonant circuit having a reactance that increases with frequency.

20. The wireless device of claim 18 wherein the reactance compensation circuit includes a DC blocking capacitance selected to reduce variation over frequency of the fundamental load impedance.

Assignees

• Skyworks Solutions Inc

Inventors

• Lyalin Aleksey A
• Hwang Taesong
• Reisner Russ Alan
• Muhlmeyer Nicholas Quinn

Classifications

• H03F3/265

  with field-effect transistors only · CPC title

• H03F2200/411

  the output amplifying stage of an amplifier comprising two power stages · CPC title

• H03F3/193

  with field-effect devices (H03F3/195 takes precedence) · CPC title

• H03F1/0288 Primary

  using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers · CPC title

• H03F3/245

  with semiconductor devices only · CPC title