High frequency module

US10109552B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10109552-B2
Application numberUS-201515504240-A
CountryUS
Kind codeB2
Filing dateAug 25, 2015
Priority dateAug 26, 2014
Publication dateOct 23, 2018
Grant dateOct 23, 2018

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A high frequency module improved in heat dissipation performance includes: a dielectric multilayer substrate including a ground layer and a high frequency electronic component mounted thereon while being in contact with the ground layer, the high frequency electronic component including a heat generating portion; and a cutoff block formed of an upstanding wall portion and a cover portion covering the upstanding wall portion, the cutoff block housing the high frequency electronic component and including a hollow portion having a cutoff characteristic at a frequency of a high frequency signal used by the high frequency electronic component, and the upstanding wall portion of the cutoff block being in contact with the ground layer of the dielectric multilayer substrate.

First claim

Opening claim text (preview).

The invention claimed is: 1. A high frequency module comprising: a dielectric multilayer substrate including a ground layer and a high frequency integrated circuit mounted thereon while being in contact with the ground layer, the high frequency integrated circuit being a heat generating element; and a cutoff block formed of an upstanding wall portion that contacts the ground layer of the dielectric multilayer substrate and a cover portion that covers the upstanding wall portion, the cutoff block housing the high frequency integrated circuit, including a hollow portion having a cutoff characteristic at a frequency of a high frequency signal used by the high frequency integrated circuit, and configured to dissipate heat generated in the high frequency integrated circuit and transferred through the ground layer; the dielectric multilayer substrate including: a first surface on which the high frequency integrated circuit, a coaxial connector, and the cutoff block are mounted, and a second surface on which an antenna element formed of a planar antenna is provided, the antenna element configured to dissipate heat generated in the high frequency integrated circuit and transferred through the dielectric multilayer substrate, wherein a zero point of electric field strength of the antenna element is connected to the ground layer. 2. The high frequency module according to claim 1 , wherein a part of the ground layer is a metal core, on which the high frequency integrated circuit is mounted while being in contact with the metal core. 3. The high frequency module according to claim 1 , wherein a plurality of the ground layers are formed to extend over a dielectric layer of the dielectric multilayer substrate, and the plurality of the ground layers formed to extend over the dielectric layer are connected to conductive ground vias, respectively, formed in the dielectric layer. 4. The high frequency module according to claim 3 , wherein a plurality of the ground vias are provided around the high frequency integrated circuit. 5. The high frequency module according to claim 1 , wherein a radiation fin is vertically arranged on the cover portion of the cutoff block. 6. The high frequency module according to claim 1 , wherein a heat dissipation pipe is installed inside the cutoff block. 7. A high frequency module comprising: a dielectric multilayer substrate including a ground layer and a high frequency integrated circuit mounted thereon while being in contact with the ground layer, the high frequency integrated circuit being a heat generating element; and a cutoff block formed of an upstanding wall portion that contacts the ground layer of the dielectric multilayer substrate and a cover portion that covers the upstanding wall portion, the cutoff block housing the high frequency integrated circuit and including a hollow portion having a cutoff characteristic at a frequency of a high frequency signal used by the high frequency integrated circuit; the dielectric multilayer substrate including: a first surface on which the high frequency integrated circuit and the cutoff block are mounted, and a second surface on which an antenna element connected to the high frequency integrated circuit is provided; and the antenna element being a planar antenna, and a zero point of electric field strength of the antenna element being connected to the ground layer. 8. The high frequency module according to claim 7 , wherein a part of the ground layer is a metal core, on which the high frequency integrated circuit is mounted while being in contact with the metal core. 9. The high frequency module according to claim 7 , wherein a plurality of the ground layers are formed to extend over a dielectric layer of the dielectric multilayer substrate, and the plurality of the ground layers formed to extend over the dielectric layer are connected to conductive ground vias, respectively, formed in the dielectric layer. 10. The high frequency module according to claim 9 , wherein a plurality of the ground vias are provided around the high frequency integrated circuit. 11. The high frequency module according to claim 7 , wherein a radiation fin is vertically arranged on the cover portion of the cutoff block. 12. The high frequency module according to claim 7 , wherein a heat dissipation pipe is installed inside the cutoff block.

Assignees

Inventors

Classifications

  • between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

  • of vias therein · CPC title

  • for antennas · CPC title

  • for cooling by change of state · CPC title

  • Package configurations · CPC title

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Frequently asked questions

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What does patent US10109552B2 cover?
A high frequency module improved in heat dissipation performance includes: a dielectric multilayer substrate including a ground layer and a high frequency electronic component mounted thereon while being in contact with the ground layer, the high frequency electronic component including a heat generating portion; and a cutoff block formed of an upstanding wall portion and a cover portion coveri…
Who is the assignee on this patent?
Mitsubishi Electric Corp
What technology area does this patent fall under?
Primary CPC classification H10W42/20. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Oct 23 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).