Photolithography method

Patent metadata

Field	Value
Publication number	US-10108092-B2
Application number	US-201514895180-A
Country	US
Kind code	B2
Filing date	Jun 9, 2015
Priority date	Jan 15, 2015
Publication date	Oct 23, 2018
Grant date	Oct 23, 2018

Abstract

Provided is a photolithography method, including: a) forming a photoresist layer satisfying D=m*(λ/2n) (D is a thickness of the photoresist layer, n is a refractive index of the photoresist, λ is a wavelength of irradiated light at the time of exposure, and m is a natural number of 1 or more) on a substrate; and b) manufacturing a photoresist pattern having a ring shape by exposing the photoresist layer and developing the exposed photoresist layer using a photo mask including a transparent substrate and a plate-type metal dot contacting a light emitting surface of the transparent substrate.

First claim

The invention claimed is:

1. A photolithography method, comprising:
a) forming a photoresist layer satisfying the following Relational Expression 1 on a substrate; and
b) manufacturing a photoresist pattern having a ring shape by exposing the photoresist layer and developing the exposed photoresist layer using a photo mask including a transparent substrate and a metal plate in a circular shape formed on a light emitting surface of the transparent substrate to prevent transmission of light, and wherein the photo mask satisfies the following Relational Expression 2, wherein an air gap is formed between the photoresist layer and the photo mask
D=m *(λ/2 n )  [Relational Expression 1]

(D is a thickness of the photoresist layer, n is a refractive index of a photoresist, λ, is a wavelength of irradiated light at the time of exposure, and m is a natural number of 1 or more)
150 nm≤ R≤ 1.5 μm  [Relational Expression 2]

(In the above Relational Expression 2, R is a radius of the metal plate in a circular shape).

2. The photolithography method of claim 1 , wherein a size of the air gap satisfies the following Relational Expression 3
50≤Gap≤200 nm  [Relational Expression 3]

(In the above Relational Expression 3, the size of the air gap is a spaced distance between the photo mask and the photoresist layer).

3. The photolithography method of claim 1 , wherein metal of the metal plate is at least one selected from transition metals including Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, La, Hf, Ta, W, Re, Os, Jr, Pt, and Au, post-transition metals including Al, Ga, In, Tl, Sn, Pb, and Bi, and metals including Li, Be, Na, Mg, K, Ca, Rb, Sr, Cs, and Ba.

4. The photolithography method of claim 1 , wherein the irradiated light at the time of the exposure is ultraviolet (UV) and is irradiated at a dose of 90 to 110 mJ/cm2.

5. The photolithography method of claim 1 , wherein the photoresist pattern is a single-layered ring shape or a multi-layered ring shape in which at least two rings are stacked, each ring of the multi-layered ring shape has a concentric structure, and an upper ring is positioned in a lower ring, based on a projection image of multi-layered ring shape in a light irradiation direction.

6. The photolithography method of claim 5 , wherein an outer diameter of the upper ring having the multi-layered ring shape is smaller than a diameter of the metal plate.

7. The photolithography method of claim 5 , wherein the photoresist pattern having the single-layered ring shape or the multi-layered ring shape is controlled by at least one factor selected from the dose of irradiated light at the time of the exposure and a development time.

Assignees

• Korea Res Inst Standards & Sci

Inventors

• You Eun-Ah

Classifications

• G03F1/50

  Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof · CPC title

• G03F7/039

  Macromolecular compounds which are photodegradable, e.g. positive electron resists (G03F7/075 takes precedence; macromolecular quinonediazides G03F7/023) · CPC title

• G03F7/2004 Primary

  characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light · CPC title

• G03F7/00 Primary

  Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor (using photoresist structures for special production processes, see the relevant places, e.g. B44C, H10P76/00, H05K) · CPC title

• G03F7/32

  Liquid compositions therefor, e.g. developers · CPC title