Photosensitive transfer material, pattern formation method, and etching method

Patent metadata

Field	Value
Publication number	US-10108091-B2
Application number	US-201615185861-A
Country	US
Kind code	B2
Filing date	Jun 17, 2016
Priority date	Dec 18, 2013
Publication date	Oct 23, 2018
Grant date	Oct 23, 2018

Abstract

A photosensitive transfer material including a support and a photosensitive resin composition layer, in which the photosensitive resin composition layer includes a polymer component (A) including a polymer having a constituent unit (a1) that includes a group in which an acid group is protected by an acid-decomposable group and a photoacid generator (B), and the photosensitive resin composition layer does not have an ethylenic crosslinking structure is a positive-type material, is excellent in terms of heat-resistant rectangular properties, etchant resistance, and resist peeling properties, and generates only a small amount of dust during processes; a pattern formation method, and an etching method.

First claim

What is claimed is:

1. A method for producing a capacitance-type input device, comprising a pattern formation method which includes the following steps:
a photosensitive resin composition layer formation step of forming a photosensitive resin composition layer on at least one surface of a substrate using the following photosensitive transfer material;
an exposure step of exposing the photosensitive resin composition layer; and
a development step of developing the exposed photosensitive resin composition layer, wherein the photosensitive transfer material comprises:
a support; and
a photosensitive resin composition layer,
wherein the photosensitive resin composition layer includes a polymer component (A) including a polymer having a constituent unit (a1) that includes a group in which an acid group is protected by an acid-decomposable group and a photoacid generator (B),
the photosensitive resin composition layer does not have an ethylenic crosslinking structure; and
the constituent unit (a1) of the polymer component (A) is a constituent unit represented by General Formula (A2′) below:

in General Formula (A2′), each of R 31 and R 32 independently represents a hydrogen atom, an alkyl group, or an aryl group, either or both R 31 or R 32 is an alkyl group or an aryl group, R 33 represents an alkyl group or an aryl group, R 31 or R 32 and R 33 may be combined together so as to form a cyclic ether, R 34 represents a hydrogen atom or a methyl group, and X 0 represents a single bond or an arylene group.

2. The method for producing a capacitance-type input device according to claim 1 , wherein the recited pattern formation method further comprises:
a post-baking step of heating a pattern image made of the photosensitive resin composition layer obtained by means of development.

3. The method for producing a capacitance-type input device according to claim 1 , wherein the method further comprises:
a step of carrying out etching using a pattern produced using the pattern formation method recited in claim 1 as an etching resist; and
a step of removing the pattern through a chemical treatment after an etching treatment.

4. The method for producing a capacitance-type input device according to claim 1 ,
wherein the photosensitive resin composition layer of the photosensitive transfer material includes two or more kinds of polymers having the constituent unit (a1) that includes a group in which an acid group is protected by an acid-decomposable group and;
the photosensitive resin composition layer includes a polymer having a constituent unit represented by General Formula (A2′) as the polymer component (A) having the constituent unit (a1) that includes a group in which an acid group is protected by an acid-decomposable group and a polymer not having a constituent unit represented by the General Formula (A2′) as the polymer having the constituent unit (a1) that includes a group in which an acid group is protected by an acid-decomposable group

Assignees

• Fujifilm Corp

Inventors

• Sato Morimasa

Classifications

• G03F7/0392

  the macromolecular compound being present in a chemically amplified positive photoresist composition · CPC title

• G03F7/40

  Treatment after imagewise removal, e.g. baking · CPC title

• G03F7/11

  having cover layers or intermediate layers, e.g. subbing layers {(G03F7/091 - G03F7/093, B41N3/03 take precedence)} · CPC title

• Y02P20/582

  Recycling of unreacted starting or intermediate materials · CPC title

• G03F7/039 Primary

  Macromolecular compounds which are photodegradable, e.g. positive electron resists (G03F7/075 takes precedence; macromolecular quinonediazides G03F7/023) · CPC title