Semiconductor device, and resistance measuring system and pressure instrumentation device each including the semiconductor device

Patent metadata

Field	Value
Publication number	US-10107698-B2
Application number	US-201514865187-A
Country	US
Kind code	B2
Filing date	Sep 25, 2015
Priority date	Oct 6, 2014
Publication date	Oct 23, 2018
Grant date	Oct 23, 2018

Abstract

A semiconductor device includes a variable current generating unit that sends a direct current of a value according to a control signal from one measurement node of a bridge circuit in which a change amount of a resistance value of a pressure-sensitive resistance element appears as a potential difference between measurement nodes, a potential difference determining unit that determines whether or not the potential difference has been generated, and a control unit that outputs the control signal to the variable current generating unit so that the variable current generating unit sends the direct current of a value that does not generate the potential difference based on a determination result of the potential difference determining unit.

First claim

What is claimed is:

1. A semiconductor device comprising:
a variable current generating unit that sends a direct current of a value according to a control signal from one measurement node of a bridge circuit in which a change amount of a resistance value of a pressure-sensitive resistance element appears as a potential difference between a first and a second measurement node;
a potential difference determining unit that determines whether or not the potential difference falls within a range of a predetermined value; and
a control unit that outputs the control signal to the variable current generating unit so that the variable current generating unit sends the direct current with which the potential difference falls within the range of the predetermined value based on a determination result of the potential difference determining unit.

2. The semiconductor device according to claim 1 , wherein the potential difference determining unit includes a comparator that compares the potential difference with a ground voltage.

3. The semiconductor device according to claim 2 , wherein
the potential difference determining unit further includes an amplifier circuit that amplifies the potential difference, and
the comparator compares an output voltage of the amplifier circuit with the ground voltage.

4. The semiconductor device according to claim 1 , wherein the potential difference determining unit includes an AD converter that converts the potential difference into a digital value according thereto.

5. The semiconductor device according to claim 4 , wherein
the potential difference determining unit further includes an amplifier circuit that amplifies the potential difference, and
the AD converter converts an output voltage of the amplifier circuit into a digital value according thereto.

6. The semiconductor device according to claim 1 , wherein the control unit outputs the control signal so that a value of the direct current is changed in stages until the potential difference determining unit determines that the potential difference falls within the range of the predetermined value.

7. The semiconductor device according to claim 1 , wherein the variable current generating unit includes a current output type DA converter that outputs the direct current according to the control signal.

8. The semiconductor device according to claim 1 , wherein the variable current generating unit includes: a voltage output type DA converter that outputs a voltage according to the control signal; and a voltage-current converting circuit that converts the output voltage of the voltage output type DA converter into the direct current.

9. The semiconductor device according to claim 8 , wherein the voltage output type DA converter includes a resistance ladder or a resistance string.

10. The semiconductor device according to claim 1 , wherein the potential difference determining unit includes an AD converter that converts the potential difference into a digital value according thereto.

11. The semiconductor device according to claim 10 , wherein
the potential difference determining unit further includes an amplifier circuit that amplifies the potential difference, and
the AD converter converts an output voltage of the amplifier circuit into a digital value according thereto.

12. The method according to claim 1 , further comprising outputting, by the control unit, the control signal so that a value of the direct current is changed in stages until the potential difference determining unit determines that the potential difference falls within the range of the predetermined value.

13. A semiconductor device comprising:
a variable current generating unit that sends a current of a value according to a control signal from one measurement node in which a change amount of a resistance value of a pressure-sensitive resistance element appears as a potential difference between a first and a second measurement node;
a potential difference determining unit that determines whether the potential difference falls within a range of a predetermined value; and
a controller that outputs the control signal to the variable current generating unit so that the variable current generating unit sends the direct current with which the potential difference falls within the range of the predetermined value based on a determination result of the potential difference determining unit.

14. The semiconductor device according to claim 13 , wherein the potential difference determining unit includes a comparator that compares the potential difference with a ground voltage.

15. The semiconductor device according to claim 14 , wherein
the potential difference determining unit further includes an amplifier circuit that amplifies the potential difference,
the comparator compares an output voltage of the amplifier circuit with the ground voltage, and
the controller outputs the control signal so that a value of the direct current is changed in stages until the potential difference determining unit determines that the potential difference falls within the range of the predetermined value.

16. A method of a semiconductor device, the method comprising:
sending, by a variable current generating unit, a direct current of a value according to a control signal from one measurement node of a bridge circuit in which a change amount of a resistance value of a pressure-sensitive resistance element appears as a potential difference between a first and a second measurement node;
determining, by a potential difference determining unit, whether or not the potential difference falls within a range of a predetermined value; and
outputting, by a control unit, the control signal to the variable current generating unit so that the variable current generating unit sends the direct current with which the potential difference falls within the range of the predetermined value based on a determination result of the potential difference determining unit.

17. The method according to claim 16 , wherein the determining includes comparing the potential difference with a ground voltage.

18. The method according to claim 17 , wherein
the determining further includes amplifying the potential difference.

Assignees

• Renesas Electronics Corp

Inventors

• Hirai Masato
• Lim Siewling

Classifications

• G01L1/2262 Primary

  involving simple electrical bridges · CPC title

• G01L1/18 Primary

  using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material · CPC title

• G01R27/02

  Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant (by measuring phase angle only G01R25/00) · CPC title

• G01G3/142

  Circuits specially adapted therefor · CPC title