Alloyed rod structure in a nanocrystalline quantum dot

Patent metadata

Field	Value
Publication number	US-10106734-B2
Application number	US-201514814386-A
Country	US
Kind code	B2
Filing date	Jul 30, 2015
Priority date	Jul 30, 2014
Publication date	Oct 23, 2018
Grant date	Oct 23, 2018

Abstract

A quantum dot includes a nanocrystalline core and an alloyed nanocrystalline shell made of a semiconductor material composition different from the nanocrystalline core. The alloyed nanocrystalline shell is bonded to and completely surrounds the nanocrystalline core.

First claim

What is claimed is:

1. A quantum dot, comprising:
an anisotropic nanocrystalline core having an aspect ratio between, but not including, 1.0 and 2.0;
an alloyed nanocrystalline shell comprising a semiconductor material composition different from the nanocrystalline core, the alloyed nanocrystalline shell bonded to and completely surrounding the nanocrystalline core; and
an outer nanocrystalline shell bonded to and surrounding the nanocrystalline shell, the outer nanocrystalline shell comprising a semiconductor material composition different from the nanocrystalline core and the alloyed nanocrystalline shell.

2. The quantum dot of claim 1 , wherein the nanocrystalline core comprises a Group II-VI semiconductor material composition consisting of CdSe, and wherein the alloyed nanocrystalline shell comprises a Group II-VI semiconductor material composition consisting of CdZnS.

3. A quantum dot, comprising:
a ternary semiconductor nanocrystalline shell;
an anisotropic semiconductor nanocrystalline core having an aspect ratio between, but not including, 1.0 and 2.0, the anisotropic semiconductor nanocrystalline core comprising one of three elements of the ternary semiconductor nanocrystalline shell, the ternary semiconductor nanocrystalline shell bonded to and completely surrounding the semiconductor nanocrystalline core; and
an outer shell layer encapsulating the ternary semiconductor nanocrystalline shell, wherein the outer shell layer encapsulating the ternary semiconductor nanocrystalline shell comprises a binary outer nanocrystalline shell bonded to and surrounding the ternary semiconductor nanocrystalline shell, the binary outer nanocrystalline shell comprising a semiconductor material composition different from the semiconductor nanocrystalline core and the alloyed semiconductor nanocrystalline shell.

4. The quantum dot of claim 3 , wherein the semiconductor nanocrystalline core consists of a first Group II-VI semiconductor material, and the ternary semiconductor nanocrystalline shell consists of a second, different, Group II-VI semiconductor material.

5. The quantum dot of claim 4 , wherein the first Group II-VI semiconductor material is CdSe, and wherein the second Group II-VI semiconductor material is CdZnS.

6. The quantum dot of claim 1 , further comprising an insulator layer encapsulating the alloyed nanocrystalline shell.

7. The quantum dot of claim 3 , further comprising an insulator layer encapsulating the ternary semiconductor nanocrystalline shell.

Assignees

• Pacific Light Tech Corp
• Osram Opto Semiconductors Gmbh

Inventors

• Ghosh Yagnaseni
• Mangum Benjamin Daniel
• Puetz Norbert
• Kurtin Juanita N

Classifications

• B82Y40/00

  Manufacture or treatment of nanostructures · CPC title

• C09K11/025 Primary

  non-luminescent particle coatings or suspension media · CPC title

• B82Y30/00

  Nanotechnology for materials or surface science, e.g. nanocomposites · CPC title

• Y10S977/89

  Deposition of materials, e.g. coating, cvd, or ald · CPC title

• C09K11/883

  with zinc or cadmium · CPC title