SiC substrate separating method

Patent metadata

Field	Value
Publication number	US-10105792-B2
Application number	US-201615342583-A
Country	US
Kind code	B2
Filing date	Nov 3, 2016
Priority date	Nov 12, 2015
Publication date	Oct 23, 2018
Grant date	Oct 23, 2018

Abstract

Disclosed herein is an SiC substrate separating method for separating an SiC substrate into at least two parts in a planar manner. The SiC substrate separating method includes an adhesive tape attaching step of attaching a transparent adhesive tape to a first surface of the SiC substrate, a support member attaching step of attaching a support member to a second, opposite surface of the SiC substrate, and a separation start point forming step of setting the focal point of a laser beam at a predetermined depth from the adhesive tape and next applying the laser beam to the adhesive tape while relatively moving the focal point and the SiC substrate to thereby form a modified layer parallel to the first surface of the SiC substrate and cracks propagating from the modified layer, thus forming a separation start point.

First claim

What is claimed is:

1. An SiC substrate separating method for separating an SiC substrate into at least two parts in a planar manner, said SiC substrate having a first surface, a second surface opposite to said first surface, a c-axis extending from said first surface to said second surface, and a c-plane perpendicular to said c-axis, said SiC substrate separating method comprising:
an adhesive tape attaching step of attaching a transparent adhesive tape to said first surface of said SiC substrate;
a support member attaching step of attaching a support member to said second surface of said SiC substrate;
a separation start point forming step of setting the focal point of a laser beam having a transmission wavelength to said SiC substrate and said adhesive tape inside said SiC substrate at a predetermined depth from said adhesive tape after performing said adhesive tape attaching step and said support member attaching step, and next applying said laser beam to said adhesive tape as relatively moving said focal point and said SiC substrate to thereby form a modified layer parallel to said first surface of said SiC substrate and cracks propagating from said modified layer, thus forming a separation start point; and
a separating step of applying an external force to said SiC substrate after performing said separation start point forming step, thereby separating said SiC substrate into a first SiC substrate having said first surface and a second SiC substrate having said second surface at said separation start point in the condition where said adhesive tape is attached to said first SiC substrate and said support member is attached to said second SiC substrate;
said separation start point forming step including
a modified layer forming step of relatively moving the focal point of said laser beam in a first direction perpendicular to a second direction where said c-axis is inclined by an off angle with respect to a normal to said first surface of said SiC substrate and said off angle is formed between said c-plane and said first surface, thereby linearly forming said modified layer extending in said first direction inside said SiC substrate, and
an indexing step of relatively moving said focal point in said second direction to thereby index said focal point by a predetermined amount in said second direction.

2. The SiC substrate separating method according to claim 1 , wherein the refractive index of said adhesive tape is higher than the refractive index of air and lower than the refractive index of said SiC substrate.

3. The SiC substrate separating method according to claim 1 , further comprising
a flattening step of grinding a separation surface of said first SiC substrate separated from said second SiC substrate at said separation start point and also grinding a separation surface of said second SiC substrate separated from said first SiC substrate at said separation start point, by using an abrasive member, thereby flattening said separation surface of said first SiC substrate and said separation surface of said second SiC substrate.

Assignees

• Disco Corp

Inventors

• Hirata Kazuya

Classifications

• H10P72/7416

  used during dicing or grinding · CPC title

• H10P90/123

  by grinding or lapping · CPC title

• H10P72/7402

  Wafer tapes, e.g. grinding or dicing support tapes · CPC title

• H10P72/74

  using temporarily an auxiliary support · CPC title

• H10P54/00

  Cutting or separating of wafers, substrates or parts of devices · CPC title