Electron injector and free electron laser

US10103508B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10103508-B2
Application numberUS-201715600149-A
CountryUS
Kind codeB2
Filing dateMay 19, 2017
Priority dateDec 5, 2013
Publication dateOct 16, 2018
Grant dateOct 16, 2018

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

A photocathode comprises a substrate in which a cavity is formed and a film of material disposed on the substrate. The film of material comprises an electron emitting surface configured to emit electrons when illuminated by a beam of radiation. The electron emitting surface is on an opposite side of the film of material from the cavity.

First claim

Opening claim text (preview).

The invention claimed is: 1. A photocathode comprising: a substrate in which a cavity is formed; and a film of material disposed on the substrate, wherein the film of material comprises an electron emitting surface configured to emit electrons when illuminated by a beam of radiation at an impact region, wherein the impact region is configured to receive ions during operation of the photocathode, wherein the electron emitting surface is on an opposite side of the film of material from the cavity, wherein the cavity is substantially aligned with the impact region, and wherein the cavity is configured to reduce effects of ion collisions with the photocathode. 2. The photocathode of claim 1 , wherein the thickness of a portion of the photocathode disposed between the electron emitting surface and the cavity is sufficiently thin that the majority of positively charged ions incident at that portion of the photocathode pass through that portion of the photocathode and into the cavity. 3. The photocathode of claim 2 , wherein the thickness of the portion of the photocathode disposed between the electron emitting surface and the cavity is less than 10 microns. 4. The photocathode of claim 1 , wherein the photocathode is configured to take on a desired shape after a deformation of the photocathode which is brought about by an electrostatic pressure applied to the photocathode when the photocathode is held at a voltage. 5. The photocathode of claim 4 , wherein the photocathode is configured such that after the deformation of the photocathode, electric field lines associated with the voltage applied to the photocathode are substantially uniform. 6. The photocathode of claim 4 , wherein the substrate comprises an indentation in the substrate. 7. The photocathode of claim 4 , wherein the cavity in the substrate comprises a chamfer. 8. The photocathode of any of claim 1 , wherein the substrate comprises one or more ribs. 9. The photocathode of claim 8 , wherein the one or more ribs are arranged to strengthen the photocathode to resist an electrostatic pressure applied to the photocathode when the photocathode is held at a voltage. 10. The photocathode of claim 8 , wherein the ribs are arranged in a honeycomb structure. 11. The photocathode of claim 8 , wherein the ribs have a thickness of less than approximately 1 micron. 12. The photocathode of claim 1 , wherein the substrate comprises silicon. 13. The photocathode of claim 1 , wherein the film of material comprises one or more alkali metals. 14. The photocathode of claim 13 , wherein the film of material comprises sodium potassium antimonide. 15. An electron injector comprising: a photocathode arranged to receive a beam of radiation from a radiation source, the photocathode comprising: a substrate in which a cavity is formed; a film of material disposed on the substrate, wherein the film of material comprises an electron emitting surface configured to emit electrons when illuminated by a beam of radiation at an impact region, wherein the impact region is configured to receive ions during operation of the photocathode, wherein the electron emitting surface is on an opposite side of the film of material from the cavity, wherein the cavity is substantially aligned with the impact region, and wherein the cavity is configured to reduce effects of ion collisions with the photocathode, and an electron booster operable to accelerate a beam of electrons emitted from the photocathode. 16. A free electron laser comprising: an electron injector comprising; a photocathode arranged to receive a beam of radiation from a radiation source, the photocathode comprising: a substrate in which a cavity is formed; a film of material disposed on the substrate, wherein the film of material comprises an electron emitting surface configured to emit electrons when illuminated by a beam of radiation at an impact region, wherein the impact region is configured to receive ions during operation of the photocathode, wherein the electron emitting surface is on an opposite side of the film of material from the cavity, wherein the cavity is substantially aligned with the impact region, and wherein the cavity is configured to reduce effects of ion collisions with the photocathode, and an electron booster operable to accelerate a beam of electrons emitted from the photocathode, a linear accelerator operable to accelerate the beam of electrons to relativistic speeds; and an undulator operable to cause the relativistic electrons to follow an oscillating path thereby causing them to stimulate emission of coherent radiation. 17. The free electron laser of claim 16 , wherein the undulator is configured to cause the electrons to emit EUV radiation. 18. The free electron laser of claim 16 , wherein the linear accelerator is an energy recovery linear accelerator, and wherein the free electron laser further comprises a merging unit configured to combine the electron beam output from the electron injector with a recirculating electron beam. 19. A lithographic system comprising: an illumination system configured to provide a beam of radiation; a support configured to support a patterning device that is configured to impart a pattern on the beam of radiation; a projection system configured to direct the patterned beam of radiation onto a target portion of a substrate; a free electron laser comprising an electron injector comprising a photocathode, arranged to receive a beam of radiation from a radiation source, the photocathode comprising: a substrate in which a cavity is formed; a film of material disposed on the substrate, wherein the film of material comprises an electron emitting surface configured to emit electrons when illuminated by a beam of radiation at an impact region, wherein the impact region is configured to receive ions during operation of the photocathode, wherein the electron emitting surface is on an opposite side of the film of material from the cavity, wherein the cavity is substantially aligned with the impact region, and wherein the cavity is configured to reduce effects of ion collisions with the photocathode, an electron booster operable to accelerate a beam of electrons emitted from the photocathode, a linear accelerator operable to accelerate the beam of electrons to relativistic speeds; and an undulator operable to cause the relativistic electrons to follow an oscillating path thereby causing them to stimulate emission of coherent radiation. 20. A method of producing an electron beam comprising: directing a beam of radiation to be incident on an impact region of a photocathode, the impact region receiving ions during operation of the photocathode, thereby causing the photocathode to emit a beam of electrons, the photocathode comprising a substrate in which a cavity is formed, the cavity being substantially aligned with the impact region to reduce the effects of ion collisions with the photocathode, and a film of material disposed on the substrate; and emitting electrons from an electron emitting surface of the film when illuminated by the beam of radiation, the electron emitting surface being on an opposite side of the film of material from the cavity.

Assignees

Inventors

Classifications

  • Arrangements for injecting particles into orbits · CPC title

  • Electron sources · CPC title

  • Photo-emissive cathodes (H01J1/35 takes precedence) · CPC title

  • H01S3/0903Primary

    Free-electron laser · CPC title

Patent family

Related publications grouped by family.

External sources

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US10103508B2 cover?
A photocathode comprises a substrate in which a cavity is formed and a film of material disposed on the substrate. The film of material comprises an electron emitting surface configured to emit electrons when illuminated by a beam of radiation. The electron emitting surface is on an opposite side of the film of material from the cavity.
Who is the assignee on this patent?
Asml Netherlands Bv
What technology area does this patent fall under?
Primary CPC classification H01S3/0903. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Oct 16 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).