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US-2024404864-A1 · Dec 5, 2024 · US
Copper-ceramic bonded body and power module substrate
US10103035B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10103035-B2 |
| Application number | US-201515117935-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 12, 2015 |
| Priority date | Feb 12, 2014 |
| Publication date | Oct 16, 2018 |
| Grant date | Oct 16, 2018 |
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Abstract
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There is a provided a copper-ceramic bonded body in which a copper member formed of copper or a copper alloy and a ceramic member formed of nitride ceramic are bonded to each other, in which an active element oxide layer containing an active element and oxygen is formed at bonding interfaces between the copper member and the ceramic member, and a thickness t of the active element oxide layer is in a range of 5 nm to 220 nm.
First claim
Opening claim text (preview).
The invention claimed is: 1. A copper-ceramic bonded body comprising: a copper member formed of copper or a copper alloy; and a ceramic member formed of nitride ceramic, wherein the copper member and the ceramic member are bonded to each other, wherein an active element oxide layer containing an active element and oxygen is formed at bonding interfaces between the copper member and the ceramic member, wherein a thickness of the active element oxide layer is in a range of 5 nm to 200 nm wherein the active element is selected from the group consisting of Ti, Zr, Hf, and Nb, wherein the active element oxide layer contains P, and wherein an amount of P of the active element oxide layer is in a range of 1.5 mass % to 10 mass %. 2. The copper-ceramic bonded body according to claim 1 , wherein a Cu—Al eutectic layer is formed between the active element oxide layer and the copper member. 3. A power module substrate configured with the copper-ceramic bonded body according to claim 1 , wherein in the copper-ceramic bonded body, a copper plate formed of copper or a copper alloy is bonded to a surface of a ceramic substrate formed of nitride ceramic. 4. The copper-ceramic bonded body according to claim 1 , wherein a concentration of the active element of the active element oxide layer is in a range of 35% to 70%.
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between a chip and a stacked insulating package substrate, interposer or RDL · CPC title
changes in materials · CPC title
comprising metals or metalloids, e.g. solders · CPC title
Materials of die-attach connectors · CPC title
Ceramics or glasses · CPC title
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- What does patent US10103035B2 cover?
- There is a provided a copper-ceramic bonded body in which a copper member formed of copper or a copper alloy and a ceramic member formed of nitride ceramic are bonded to each other, in which an active element oxide layer containing an active element and oxygen is formed at bonding interfaces between the copper member and the ceramic member, and a thickness t of the active element oxide layer is…
- Who is the assignee on this patent?
- Mitsubishi Materials Corp
- What technology area does this patent fall under?
- Primary CPC classification H10W99/00. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Oct 16 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).