Manufacturing method of semiconductor device

Patent metadata

Field	Value
Publication number	US-10103033-B2
Application number	US-201715706256-A
Country	US
Kind code	B2
Filing date	Sep 15, 2017
Priority date	Sep 27, 2016
Publication date	Oct 16, 2018
Grant date	Oct 16, 2018

Abstract

An object of the present invention is to provide a semiconductor device including a film to be processed having a uniform height. A first coating film made of photosensitive material is formed so as to cover step parts and to become thicker in a central part of a semiconductor substrate in planar view and to become thinner in an outer peripheral part. Next, a first pattern part located on the central part side relative to the step parts and a second pattern part located on the outer peripheral part side relative to the step parts are formed. The first pattern part and the second pattern part are formed so that the occupied area of the first pattern part in planar view becomes smaller than that of the second pattern part in planar view. Next, the first pattern part and the second pattern part are sagged by heating. Next, a second coating film is formed by spin coating so as to cover the step parts.

First claim

What is claimed is:

1. A manufacturing method of a semiconductor device comprising the steps of:
preparing a semiconductor substrate having a main surface and having a first step region where a first step part is formed on the main surface;
forming a first coating film made of photosensitive material so as to cover the first step region and to become thicker in a central part of the semiconductor substrate in planar view and to become thinner towards an outer peripheral part from the central part;
forming at least one first pattern part located on the central part side relative to the first step region and at least one second pattern part located on the outer peripheral part side relative to the first step region by exposing and developing a portion of the first coating film so that the occupied area of the at least one first pattern part in planar view becomes smaller than that of the at least one second pattern part in planar view;
sagging the at least one first pattern part and the at least one second pattern part by heating;
after the step of sagging the at least one first pattern part and the at least one second pattern part by heating, forming a second coating film by spin coating so as to cover the first step region, and
removing at least a portion of the second coating film.

2. The manufacturing method of the semiconductor device according to claim 1 ,
wherein the difference between the thicknesses of the at least one first pattern part and the at least one second pattern part after the step of sagging the at least one first pattern part and the at least one second pattern part by heating is smaller than the difference between the thicknesses of the at least one first pattern part and the at least one second pattern part before the step of sagging the at least one first pattern part and the at least one second pattern part by heating.

3. The manufacturing method of the semiconductor device according to claim 1 ,
wherein at least any one of heat treatment and ultraviolet heat curing treatment is performed for the at least one first pattern part and the at least one second pattern part in the step of sagging the at least one first pattern part and the at least one second pattern part by heating.

4. The manufacturing method of the semiconductor device according to claim 1 ,
wherein the material configuring the second coating film is a non-photosensitive material.

5. The manufacturing method of the semiconductor device according to claim 1 ,
wherein the semiconductor substrate on which a covered film covering the first step region is formed is prepared in the step of preparing the semiconductor substrate,
wherein the second coating film is formed on the covered film in the step of forming the second coating film, and
wherein at least a portion of the second coating film and at least a portion of the covered film are removed in the step of removing the second coating film.

6. The manufacturing method of the semiconductor device according to claim 1 ,
wherein at least a portion of the second coating film and at least a portion of the first step part are removed in the step of removing the second coating film.

7. The manufacturing method of the semiconductor device according to claim 1 ,
wherein a plurality of first pattern parts and a plurality of second pattern parts are formed in the step of forming the at least one first pattern part and the at least one second pattern part.

8. The manufacturing method of the semiconductor device according to claim 7 ,
wherein the first step region is surrounded by the first pattern parts and the second pattern parts in planar view.

9. The manufacturing method of the semiconductor device according to claim 1 ,
wherein the viscosity of the second coating film is 100 cP or less.

10. The manufacturing method of the semiconductor device according to claim 9 ,
wherein the viscosity of the second coating film is 10 cP or less.

11. The manufacturing method of the semiconductor device according to claim 1 ,
wherein the semiconductor substrate has a second step region in which a plurality of second step parts is formed,
wherein a plurality of first step parts is formed in the first step region, and
wherein the density of the first step parts arranged in the first step region in planar view is larger than that of the second step parts arranged in the second step region.

12. A manufacturing method of a semiconductor device comprising the steps of:
preparing a semiconductor substrate having a main surface and having a first step region where a first step part is formed on the main surface;
forming a first coating film made of photosensitive material so as to cover the first step region and to become thicker in a central part of the semiconductor substrate in planar view and to become thinner towards an outer peripheral part from the central part;
forming at least one first pattern part located on the central part side relative to the first step region and at least one second pattern part located on the outer peripheral part side relative to the first step region by exposing and developing a portion of the first coating film so that the length of the at least one first pattern part in the radial direction of the semiconductor substrate in a cross section along the radial direction is shorter than that of the at least one second pattern part in the radial direction in the cross section and the thickness of the at least one first pattern part in the cross section is thicker than that of the at least one second pattern part in the cross section;
sagging the at least one first pattern part and the at least one second pattern part by heating;
after the step of sagging the at least one first pattern part and the at least one second pattern part by heating, forming a second coating film by spin coating so as to cover the first step region, and
removing at least a portion of the second coating film.

Assignees

• Renesas Electronics Corp

Inventors

• Umeda Daisuke

Classifications

• H10P76/2043

  using an anti-reflective coating · CPC title

• H10P95/064

  the removal being chemical etching · CPC title

• H10P95/08

  Planarisation of organic insulating materials · CPC title

• H10P95/04

  Planarisation of conductive or resistive materials · CPC title

• H10P76/20

  of masks comprising organic materials · CPC title