Method for producing gallium nitride crystal

Patent metadata

Field	Value
Publication number	US-10100426-B2
Application number	US-201415124794-A
Country	US
Kind code	B2
Filing date	Nov 27, 2014
Priority date	Mar 18, 2014
Publication date	Oct 16, 2018
Grant date	Oct 16, 2018

Abstract

A method for producing a gallium nitride crystal includes growing a gallium nitride crystal 5 by dissolving nitrogen in a mixed melt including gallium and sodium, and collecting the gallium 55 separated from an alloy 51 including the gallium and the sodium by reacting the alloy 51 and a liquid 52 that ionizes the sodium and separating sodium ions and the gallium 55 from the alloy.

First claim

The invention claimed is:

1. A method for producing a gallium nitride crystal, the method comprising:
(a) growing a gallium nitride crystal in a reaction vessel, by dissolving nitrogen in a mixed melt including gallium and sodium, in the reaction vessel, wherein an alloy that includes gallium and sodium forms in the reaction vessel during the growing of the gallium nitride crystal in (a);
(a2) removing residual sodium remaining in the reaction vessel after (a), while leaving the gallium nitride crystal and the alloy that includes gallium and sodium, in the reaction vessel;
(b) separating elemental gallium from the alloy that includes gallium and sodium, by reacting the alloy and a liquid that ionizes sodium and separating the sodium as sodium ions in the liquid and the elemental gallium from the alloy;
(c) collecting the separated elemental gallium separated in (b); and
(d) repeating (a) to further grow the gallium nitride crystal remaining after (a2) or to grow another gallium nitride crystal, by using the collected elemental gallium, which was collected in (c).

2. The method for producing a gallium nitride crystal according to claim 1 , wherein the liquid is water having a temperature higher than a melting point of gallium.

3. The method for producing a gallium nitride crystal according to claim 2 , wherein the temperature of the water is 50° C. or higher and 90° C. or lower.

4. The method for producing a gallium nitride crystal according to claim 1 , wherein the liquid is an acid.

5. The method for producing a gallium nitride crystal according to claim 4 , wherein the temperature of the acid is 30° C. or higher and 120° C. or lower.

6. The method for producing a gallium nitride crystal according to claim 1 , wherein the collecting is performed when an amount of the gallium by mole relative to a total amount of the gallium and the sodium by mole in the mixed melt after the growing accounts for greater than 0% and 80% or less.

7. The method for producing a gallium nitride crystal according to claim 1 , wherein the collecting is performed when an amount of the gallium by mole relative to a total amount of the gallium and the sodium by mole in the mixed melt after the growing accounts for greater than 0% and 64% or less.

8. The method for producing a gallium nitride crystal according to claim 1 , wherein the alloy is an intermetallic compound composed of the gallium and the sodium.

9. The method for producing a gallium nitride crystal according to claim 8 , wherein the intermetallic compound is a compound consisting substantially of Ga 39 Na 22 .

10. The method for producing a gallium nitride crystal according to claim 8 , wherein the intermetallic compound includes germanium.

11. The method for producing a gallium nitride crystal according to- claim 1 , wherein elemental gallium is collected in a liquefied state.

12. The method according to- claim 1 , further comprising applying heat during (a) to melt the gallium and the sodium in the reaction vessel.

Assignees

• Satoh Takashi
• Sarayama Seiji
• Hayashi Masahiro
• Miyoshi Naoya
• Kimura Chiharu
• Wada Junichi
• Ricoh Co Ltd

Inventors

• Satoh Takashi
• Sarayama Seiji
• Hayashi Masahiro
• Miyoshi Naoya
• Kimura Chiharu
• Wada Junichi

Classifications

• C30B35/007

  Apparatus for preparing, pre-treating the source material to be used for crystal growth · CPC title

• C30B9/12

  Salt solvents, e.g. flux growth · CPC title

• C30B9/10 Primary

  Metal solvents · CPC title

• C30B29/406 Primary

  Gallium nitride · CPC title