Isothermal warm wall CVD reactor

Patent metadata

Field	Value
Publication number	US-10100409-B2
Application number	US-201514619338-A
Country	US
Kind code	B2
Filing date	Feb 11, 2015
Priority date	Feb 11, 2015
Publication date	Oct 16, 2018
Grant date	Oct 16, 2018

Abstract

A chemical vapor deposition (CVD) reactor includes a double wall vacuum processing chamber with an inner wall and an outer wall and fluid passages between the walls. A layer of thermal insulation covers the outer wall. A layer of high temperature thermal insulation covers the inner wall. Heating elements are positioned in the interior of the processing chamber to heat a substrate mounted in the chamber. A gas inlet structure is positioned through the inner and outer walls of the chamber and oriented to direct a flow of reactant gas against the substrate to form a CVD coating on the substrate. A gas outlet structure connected to a vacuum and effluent management system is positioned through the inner and outer walls of the chamber. Fluid inlet and outlet structures positioned to circulate heated thermal transfer fluid through the passages between the inner and outer walls maintain a controlled isothermal inner wall temperature above a condensation temperature of reactant gas and effluent reacted gas byproducts from condensing on the inner walls and insulation in the chamber.

First claim

The invention claimed is:

1. A chemical vapor deposition (CVD) reactor comprising:
a double wall vacuum processing chamber with a metal inner wall and a metal outer wall;
a layer of thermal insulation surrounding the outer wall;
a layer of high temperature thermal insulation on an inner surface of the inner wall;
heating elements positioned in an interior of the processing chamber;
a gas inlet structure positioned through the inner and outer walls of the processing chamber and oriented to direct a flow of reactant gas against a substrate and a support in the processing chamber to form a CVD coating on the substrate;
a gas outlet structure positioned through the inner and outer walls of the processing chamber and connected to a vacuum and effluent gas management system; and
fluid inlet and outlet structures positioned to circulate heated thermal transfer fluid through a passage between the inner wall and the outer wall of the double wall vacuum processing chamber to maintain a controlled isothermal inner wall temperature above a condensation temperature to prevent effluent byproducts from condensing on the inner walls and the high temperature insulation in the chamber.

2. The CVD reactor of claim 1 wherein the metal is stainless steel.

3. The CVD reactor of claim 1 wherein the high temperature insulation is a fibrous insulation.

4. The CVD reactor of claim 3 wherein the fibrous insulation is carbon felt, graphite felt, rigidized carbon board, rigidized graphite board, oxide ceramic blanket, or rigid oxide board formed of silica, alumino-silicate, hi-alumina or zirconia.

5. The CVD reactor of claim 1 wherein the CVD coating comprises C, SiC, BN, Si 3 N 4 B 4 C, HfC, HfB 2 , TiN, Al 2 O 3 , W or WC.

6. The CVD reactor of claim 5 wherein the CVD coating comprises BN.

7. The CVD reactor of claim 6 wherein the reactant gas comprises a mixture of BCl 3 and NH 3 .

8. The CVD reactor of claim 1 wherein the thermal transfer fluid comprises a mineral oil based thermal transfer fluid or synthetic aromatic thermal transfer fluid.

9. A method of coating a substrate by chemical vapor deposition (CVD) comprising:
mounting the substrate in a CVD reactor that comprises;
a double wall vacuum processing chamber with a metal inner wall and a metal outer wall and fluid passages between the inner wall and outer wall;
a layer of thermal insulation covering the outer wall;
a layer of high temperature thermal insulation on an inner surface of the inner wall;
heating elements positioned in an interior of the processing chamber;
a gas inlet structure positioned through the inner and outer wall of the processing chamber and oriented to direct a flow of reactant gas against the substrate;
a gas outlet structure positioned through the inner and outer wall of the processing chamber and connected to a vacuum and effluent gas management system; and
a fluid inlet and outlet structure positioned in the reactor to circulate fluid through the fluid passages;
flowing temperature controlled thermal fluid in the fluid passages to maintain the inner wall of the reaction chamber at a controlled temperature above a condensation temperature of the reactant gas and reacted gas effluent;
heating the substrate to at least one reaction temperature with the heating elements;
directing a flow of the reactant gas at the heated substrate to form at least one ceramic coating on the substrate;
eliminating excess reactant gas and reacted gas effluent from the chamber with the vacuum and effluent gas management system;
returning the chamber to room temperature and pressure; and
removing the coated substrate.

10. The method of claim 9 wherein the temperature of the inner wall of the double wall processing chamber is up to about 400° C.

11. The method of claim 10 wherein the temperature of the inner wall of the processing chamber is from about 150° C. to about 300° C.

12. The method of claim 9 wherein the ceramic coatings comprise C, SiC, BN, Si 3 N 4 , B 4 C, HfC, HfB 2 , TiN, Al 2 O 3 , W or WC.

13. The method of claim 12 wherein the ceramic coating comprises BN.

14. The method of claim 13 wherein the reactant gas is a mixture of BCl 3 and NH 3 .

15. The method of claim 9 wherein the heating elements are resistance heating elements or inductive heating elements.

16. The method of claim 9 wherein the high temperature insulation is a fibrous insulation.

17. The method of claim 16 wherein the fibrous insulation comprises carbon felt, graphite felt, rigidized carbon board, rigidized graphite board, oxide ceramic blanket, or rigid oxide board formed of silica, alumino-silicate, hi-alumina or zirconia.

18. The method of claim 9 wherein the thermal transfer fluid comprises mineral oil based thermal transfer fluid or synthetic aromatic thermal transfer fluid.

Assignees

• United Technologies Corp

Inventors

• Newton Kirk C

Classifications

• C23C16/4412

  Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps · CPC title

• C23C16/345

  Silicon nitride · CPC title

• C23C16/06

  characterised by the deposition of metallic material · CPC title

• C23C16/26

  Deposition of carbon only · CPC title

• C23C16/325

  Silicon carbide · CPC title