Edge hump reduction faceplate by plasma modulation

Patent metadata

Field	Value
Publication number	US-10100408-B2
Application number	US-201514594296-A
Country	US
Kind code	B2
Filing date	Jan 12, 2015
Priority date	Mar 3, 2014
Publication date	Oct 16, 2018
Grant date	Oct 16, 2018

Abstract

Embodiments described herein relate to a faceplate for improving film uniformity. A semiconductor processing apparatus includes a pedestal, an edge ring and a faceplate having distinct regions with differing hole densities. The faceplate has an inner region and an outer region which surrounds the inner region. The inner region has a greater density of holes formed therethrough when compared to the outer region. The inner region is sized to correspond with a substrate being processed while the outer region is sized to correspond with the edge ring.

First claim

The invention claimed is:

1. An apparatus for processing a substrate, comprising:
a chamber body defining a processing volume;
a pedestal disposed within the processing volume;
an edge ring disposed on the pedestal; and
a faceplate coupled to the chamber body opposite the pedestal in the processing volume, the faceplate comprising:
a first region having a first uniform density of holes formed therethrough; and
a second region having a second uniform density of holes formed therethrough and surrounding the first region, wherein the second uniform density of holes is no more than 80% of the first uniform density of holes, a hole size of holes in the first region and a hole size of holes in the second region are the same, an inner diameter of the second region is aligned above an inner diameter of the edge ring, and an outer diameter of the second region is aligned above an outer diameter of the edge ring.

2. The apparatus of claim 1 , wherein the first region is circle shaped and sized to correspond to a substrate being processed.

3. The apparatus of claim 2 , wherein the second region is ring shaped and sized to correspond to the edge ring.

4. The apparatus of claim 1 , wherein the first uniform density of holes is between about 20 holes/in 2 and about 100 holes/in 2 .

5. The apparatus of claim 4 , wherein the second uniform density of holes is between about 5 holes/in 2 and about 95 holes/in 2 .

6. The apparatus of claim 1 , wherein the second uniform density of holes is between about 60% and about 80% of the first uniform density of holes.

7. The apparatus of claim 6 , wherein the holes are positioned on concentric rings.

8. The apparatus of claim 1 , wherein a diameter of the first region of the faceplate corresponds to an inner diameter of the edge ring.

9. The apparatus of claim 1 , wherein the faceplate comprises an aluminum material.

10. The apparatus of claim 1 , wherein the edge ring comprises a dielectric material.

11. The apparatus of claim 10 , wherein the edge ring comprises aluminum nitride.

12. The apparatus of claim 1 , wherein a distance between the pedestal in a processing position and the faceplate is between about 250 mil and about 350 mil.

13. The apparatus of claim 1 , wherein a distance between the edge ring in a processing position and the faceplate is between about 190 mil and about 230 mil.

14. An apparatus for processing a substrate, comprising:
a chamber body defining a processing volume;
a pedestal disposed within the processing volume;
an aluminum nitride edge ring disposed on the pedestal; and
an aluminum faceplate coupled to the chamber body opposite the pedestal in the processing volume, the faceplate comprising:
a circle shaped region of the faceplate having a first uniform density of holes formed therethrough, wherein the first uniform density of holes is about 50 holes/in 2 ; and
a ring shaped region having a second uniform density of holes formed therethrough surrounding the circle shaped region, wherein the second uniform density of holes is about 30 holes/in 2 , a hole size of holes in the circle shaped region and a hole size of holes in the ring shaped region are the same, an inner diameter of the ring shaped region is aligned above an inner diameter of the edge ring, and an outer diameter of the ring shaped region is aligned above an outer diameter of the edge ring.

15. The apparatus of claim 2 , wherein a diameter of the first region is between about 250 mm and about 350 mm.

16. The apparatus of claim 3 , wherein the outer diameter of the second region is between about 200 mm and about 450 mm.

17. The apparatus of claim 14 , wherein a diameter of the circle shaped region is between about 250 mm and about 350 mm.

18. The apparatus of claim 14 , wherein the outer diameter of the ring shaped region is between about 200 mm and about 450 mm.

Assignees

• Applied Materials Inc

Inventors

• Ha Sungwon
• Lee Kwangduk Douglas
• Balasubramanian Ganesh
• Rocha-Alvarez Juan Carlos
• Seamons Martin Jay
• Duan Ziqing
• Ye Zheng John
• Kim Bok Hoen
• Jing Lei
• Le Ngoc
• Mukuti Ndanka

Classifications

• H01J37/32449

  Gas control, e.g. control of the gas flow · CPC title

• C23C16/5096

  Flat-bed apparatus · CPC title

• H01J37/32091

  the radio frequency energy being capacitively coupled to the plasma · CPC title

• C23C16/45565 Primary

  Shower nozzles · CPC title

• C23C16/4401

  Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber · CPC title