Method of forming a substrate assembly

Patent metadata

Field	Value
Publication number	US-10099449-B2
Application number	US-201715628891-A
Country	US
Kind code	B2
Filing date	Jun 21, 2017
Priority date	Mar 22, 2013
Publication date	Oct 16, 2018
Grant date	Oct 16, 2018

Abstract

A method of forming a substrate assembly includes preparing a substrate in a chamber, combining a solid-state nitrogen source and a boron source on the substrate, forming a metal layer on a surface of the substrate including the combined solid-state nitrogen and boron sources, and forming a first hexagonal boron nitride sheet directly bonded to the surface of the substrate by performing a heat treatment on the substrate including the metal layer and the combined solid-state nitrogen and boron sources.

First claim

What is claimed is:

1. A method of forming a substrate assembly, the method comprising:
placing a metal or semimetal oxide-based substrate in a reaction chamber under an inert gas, a hydrogen gas, or a mixture of an inert gas and a hydrogen gas;
combining a solid-state nitrogen source and a boron source on the substrate;
forming a metal layer on a surface of the substrate including the combined solid-state nitrogen and boron sources; and
forming a first hexagonal boron nitride sheet directly bonded to the surface of the substrate by performing a heat treatment on the substrate including the metal layer and the combined solid-state nitrogen and boron sources.

2. The method of claim 1 , wherein the combining combines at least one of ammonia borane (H 3 NBH 3 ), borazine ((BH) 3 (NH) 3 ), and polyborazylene.

3. The method of claim 1 , further comprising:
dissolving the solid-state nitrogen and boron sources in an organic solvent in a concentration range from 1 mM to 10M prior to the combining.

4. The method of claim 1 , wherein the forming the first hexagonal boron nitride sheet includes simultaneously performing the heat treatment on the substrate and exposing the substrate to one of an inert gas, a hydrogen gas, and a mixture of an inert gas and a hydrogen gas.

5. The method of claim 1 , wherein the forming the first hexagonal boron nitride sheet includes performing the heat treatment for 1 to 20 hours at a temperature of 100° C. to 2,000° C.

6. A method of forming a substrate assembly, the method comprising:
placing a metal or semimetal oxide-based substrate in a reaction chamber under an inert gas, a hydrogen gas, or a mixture of an inert gas and a hydrogen gas;
forming a metal layer on the substrate; and
forming a first hexagonal boron nitride sheet between the substrate and the metal layer, the first hexagonal boron nitride sheet being directly bonded to a surface of the substrate, the forming a first hexagonal boron nitride sheet including,
applying at least one of a nitrogen source and a boron source in one of a gas and solid state to the substrate from outside the metal layer, and
performing a heat treatment on the substrate.

7. The method of claim 6 , further comprising:
forming a second hexagonal boron nitride sheet prior to or simultaneously with the forming a first hexagonal boron nitride sheet.

8. The method of claim 6 , wherein the performing performs the heat treatment for 1 to 20 hours at a temperature of 100° C. to 2,000° C. under one of an inert gas, a hydrogen gas, and a mixture of an inert gas and a hydrogen gas.

9. The method of claim 6 , wherein
the applying applies a gas-state nitrogen source including at least one of NH 3 and N 2 , and
the applying applies a gas-state boron source including at least one of BH 3 , BF 3 , BCl 3 , B 2 H 6 , (CH 3 CH 2 ) 3 B, (CH 3 ) 3 B, and diborane.

10. The method of claim 6 , wherein the applying applies a solid-state boron source including B 2 O 3 .

11. The method of claim 6 , wherein the applying applies at least one of H 3 NBH 3 , (BH) 3 (NH) 3 , and polyborazylene.

Assignees

• Samsung Electronics Co Ltd
• Sungkyunkwan Univ Foundation For Corporate Collaboration
• Research & Business Found Sungkyunkwan Univ

Inventors

• Shin Hyeon-Jin
• Kim Sang-Woo
• Lee Jin Yeong

Classifications

• B32B2457/00

  Electrical equipment · CPC title

• B32B15/04 Primary

  comprising metal as the main or only constituent of a layer, {which is} next to another layer of {the same or of} a {different material (next to a bituminous or tarry layer B32B11/08; next to a water-setting substance layer B32B13/06; next to a glass layer B32B17/061; next to a cellulosic plastic layer B32B23/042)} · CPC title

• Y10T428/31678

  Of metal · CPC title

• C23C28/34

  including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates · CPC title

• C23C16/342

  Boron nitride · CPC title