Chemical mechanical polishing (CMP) apparatus and method

Patent metadata

Field	Value
Publication number	US-10099339-B2
Application number	US-201615171672-A
Country	US
Kind code	B2
Filing date	Jun 2, 2016
Priority date	Jun 2, 2016
Publication date	Oct 16, 2018
Grant date	Oct 16, 2018

Abstract

A chemical mechanical polishing apparatus includes a polishing zone having a wafer entrance and a wafer exit, first wafer platform, polishing module, slurry injection module, polishing cleaning module, and film-thickness measuring module. The first wafer platform includes a wafer loading region, and is able to move from the wafer entrance to the wafer exit along a first direction. The polishing module is located in the polishing zone, including a polishing belt extended along a second direction perpendicular to the first direction and is able to move along the second direction. The slurry injection module is configured for injecting slurry towards a wafer to-be-polished by the polishing module. The polishing cleaning module is located on one side of the polishing module along the first direction for cleaning the wafer. The film-thickness measuring module is located on another side of the polishing module along the first direction for measuring the thickness of the wafer.

First claim

What is claimed is:

1. A chemical mechanical polishing apparatus, comprising:
a polishing zone, including a wafer entrance and a wafer exit;
a first wafer platform including a wafer loading region, wherein the first wafer platform is able to move from the wafer entrance to the wafer exit along a first direction;
a polishing module located in the polishing zone, including a polishing belt extended along a second direction that is perpendicular to the first direction, wherein the polishing belt is able to move along the second direction;
a slurry injection module configured for injecting slurry towards a wafer to-be-polished by the polishing module;
a polishing cleaning module located on one side of the polishing module along the first direction, wherein the polishing cleaning module is used for cleaning the wafer; and
a film-thickness measuring module located on another side of the polishing module along the first direction, wherein the film-thickness measuring module is used for measuring the thickness of the wafer,
wherein the polishing module, the slurry injection module, the polishing cleaning module, and the film-thickness measuring module work simultaneously on the wafer to-be-polished while the first wafer platform moves the wafer to-be-polished.

2. The chemical mechanical polishing apparatus of claim 1 , wherein the polishing module further comprises:
a plurality of pulleys for driving the polishing belt to rotate.

3. The chemical mechanical polishing apparatus of claim 1 , wherein slurry injection module comprises:
a plurality of slurry injection tubes;
a plurality of slurry discharge tubes; and
a plurality of connector devices, wherein each connector device includes an input tube interconnected with one slurry injection tube, and at least two output tubes interconnected with one slurry discharge tube respectively.

4. The chemical mechanical polishing apparatus of claim 1 , further comprising:
a pressure plate configured for applying a pressure on the polishing belt;
a pressure supplier configured for adjusting the pressure; and
a pressure sensor for detecting the pressure.

5. The chemical mechanical polishing apparatus of claim 1 , wherein the polishing cleaning module comprises:
a washing module, including a plurality of cleaning fluid pipes, configured for spraying a cleaning fluid to wash the wafer; and
a drying module, including a plurality of air pipes, configured for drying the wafer,
wherein the washing module and the drying module are arranged opposite with each other along the first direction.

6. The chemical mechanical polishing apparatus of claim 5 , wherein the wafer platform comprises a guide groove surrounding the wafer loading region for collecting the cleaning fluid and the slurry flowed from the wafer loading region.

7. The chemical mechanical polishing apparatus of claim 1 , further comprising:
a first linear guide arranged along the first direction,
wherein the first wafer platform is connected with the first linear guide, and is able to move linearly along the first linear guide.

8. The chemical mechanical polishing apparatus of claim 7 , further comprising:
a second linear guide arranged along the first direction; and
a second wafer platform connected with the second linear guide, wherein the second wafer platform is able to move linearly along the first linear guide.

9. A chemical mechanical polishing apparatus, comprising:
a polishing zone, including a wafer entrance and a wafer exit
a first wafer platform including a wafer loading region, wherein the first wafer platform is able to move from the wafer entrance to the wafer exit along a first direction;
a polishing module located in the polishing zone, including a polishing belt extended along a second direction that is perpendicular to the first direction, wherein the polishing belt is able to move along the second direction;
a slurry injection module configured for injecting slurry towards a wafer to-be-polished by the polishing module;
a polishing cleaning module located on one side of the polishing module along the first direction, wherein the polishing cleaning module is used for cleaning the wafer;
a film-thickness measuring module located on another side of the polishing module along the first direction, wherein the film-thickness measuring module is used for measuring the thickness of the wafer;
a first linear guide arranged along the first direction,
wherein the first wafer platform is connected with the first linear guide, and is able to move along the first linear guide;

a second linear guide arranged along the first direction;
a second wafer platform connected with the second linear guide, wherein the second wafer platform is able to move along the first linear guide; and
a third linear guide and a fourth linear guide arranged along the second direction,
wherein the first linear guide and the second linear guide are connected with the third linear guide and the fourth linear guide, and are able to move along the third linear guide and the fourth linear guide.

10. The chemical mechanical polishing apparatus of claim 1 , further comprising:
a base under the polishing module; and
at least one roller under the first wafer platform,
wherein the first wafer platform is able to move on the base through the at least one roller.

11. The chemical mechanical polishing apparatus of claim 1 , wherein the film-thickness measuring module is an ellipsometer including a light source, a polarizer, at least one polarization analyzer, and at least one detector.

12. A chemical mechanical polishing method, comprising:
moving a first wafer from a wafer entrance to a polishing zone along a first direction;
in the polishing zone, moving the first wafer along the first direction, and simultaneously polishing the first wafer along a second direction, wherein the first direction is perpendicular to the second direction;
continuously moving the first wafer along the first direction and polishing the first wafer along the second direction, and simultaneously cleaning a polished portion of the first wafer; and
continuously moving the first wafer along the first direction and polishing the first wafer along the second direction, and simultaneously measuring a cleaned portion of the first wafer.

13. The chemical mechanical polishing method of claim 12 , wherein measuring the cleaned portion of the first wafer is performed by an ellipsometry.

14. The chemical mechanical polishing method of claim 13 , wherein measuring the cleaned portion of the first wafer further comprises:
measuring a plurality thickness values of different cleaned portions of the first wafer to obtain a thickness distribution uniformity of the first wafer.

15. The chemical mechanical polishing method of claim 12 , wherein polishing the first wafer comprises:
using a polishing belt to polish the first wafer back and forth along the second direction,
wherein the polishing belt is driven by a plurality of pulleys.

16. The chemical mechanical polishing method of claim 15 , wherein polishing the first wafer further comprises:
using a pressure plate to apply a pressure on the polishing belt;
using a pressure supplier to adjust the pressure; and
using a pressure sensor to detect the pressure.

17. The chemical mechanical polishing method of claim 12 , wherein cleaning the polished portion of the first wafer comprises:
using a washing module including a plurality of cleaning fluid pipes to spray a cleaning fluid to wash the polished portion of the first wafer; and
using a drying

Assignees

• Semiconductor Mfg Int Shanghai Corp

Inventors

• Wu Ken
• Jiang Yuntao
• Yang Jun

Classifications

• B24B37/20

  Lapping pads for working plane surfaces · CPC title

• B24B37/005 Primary

  Control means for lapping machines or devices · CPC title