System and method for cryogenic optoelectronic data link

Patent metadata

Field	Value
Publication number	US-10097281-B1
Application number	US-201615356030-A
Country	US
Kind code	B1
Filing date	Nov 18, 2016
Priority date	Nov 18, 2015
Publication date	Oct 9, 2018
Grant date	Oct 9, 2018

Abstract

A cryogenic optoelectronic data link, comprising a sending module operating at a cryogenic temperature less than 100 K. An ultrasensitive electro-optic modulator, sensitive to input voltages of less than 10 mV, may include at least one optically active layer of graphene, which may be part of a microscale resonator, which in turn may be integrated with an optical waveguide or an optical fiber. The optoelectronic data link enables optical output of weak electrical signals from superconducting or other cryogenic electronic devices in either digital or analog form. The modulator may be integrated on the same chip as the cryogenic electrical devices. A plurality of cryogenic electrical devices may generate a plurality of electrical signals, each coupled to its own modulator. The plurality of modulators may be resonant at different frequencies, and coupled to a common optical output line to transmit a combined wavelength-division-multiplexed (WDM) optical signal.

First claim

What is claimed is:

1. A cryogenic optoelectronic modulator, comprising:
at least one voltage input port, configured to receive at least one input signal having a full scale magnitude less than about 10 mV;
a pathway configured to carry the at least one input signal, which is superconducting at temperatures below 100K;
an optical carrier input port, configured to receive an optical carrier wave;
an electro-optic modulator, configured to operate at a cryogenic temperature less than about 100 K, comprising at least one layer of graphene, configured to modulate the optical carrier wave in dependence on at least the at least one input signal to produce a modulated optical carrier wave; and
a modulated optical output port, configured to transmit the modulated optical carrier wave.

2. The cryogenic optoelectronic modulator according to claim 1 , wherein the modulated optical carrier wave has a modulation of amplitude of at least 0.2 dB.

3. The cryogenic optoelectronic modulator according to claim 1 , wherein the modulated optical carrier wave has a modulation of phase of at least 0.02 radians.

4. The cryogenic optoelectronic modulator according to claim 1 , wherein the modulated optical carrier wave is frequency modulated.

5. The cryogenic optoelectronic modulator according to claim 1 , wherein the at least one input signal has at least one frequency component greater than about 1 GHz, and the modulated optical carrier wave represents the at least one frequency component greater than about 1 GHz with a signal to noise ratio of at least 1 dB and a modulation of amplitude of at least 0.2 dB or a modulation of phase of at least 0.02 radians.

6. The cryogenic optoelectronic modulator according to claim 1 , wherein the at least one layer of graphene is configured to change optical properties in response to the at least one input signal.

7. The cryogenic optoelectronic modulator according to claim 1 , wherein the at least one input signal has a bandwidth of at least 10 GHz.

8. The cryogenic optoelectronic modulator according to claim 1 , wherein the modulated optical carrier wave has a modulation responsive to changes in the at least one input signal of 1 mV.

9. The cryogenic optoelectronic modulator according to claim 1 , wherein the at least one voltage input port is connected to an output of a superconducting circuit, without an intervening transistor amplifier.

10. The cryogenic optoelectronic modulator according to claim 9 , wherein the superconducting circuit and the electro-optic modulator are integrated on a common substrate.

11. The cryogenic optoelectronic modulator according to claim 1 , comprising a plurality of voltage input ports configured to carry a plurality of input signals that are multiplexed on the optical carrier wave by the electro-optic modulator.

12. The cryogenic optoelectronic modulator according to claim 11 , wherein the multiplexing comprises wavelength division multiplexing a plurality of different optical carrier wavelengths.

13. The cryogenic optoelectronic modulator according to claim 12 , wherein the modulated optical carrier wave has a modulation for each of a plurality of optical carrier wavelengths.

14. The cryogenic optoelectronic modulator according to claim 1 , further comprising an integrated optical waveguide adjacent to at least one layer of graphene.

15. The cryogenic optoelectronic modulator according to claim 1 , further comprising an optical fiber which is configured to carry at least one of the optical carrier wave and the modulated optical carrier wave.

16. The cryogenic optoelectronic modulator according to claim 1 , wherein the electro-optic modulator comprises an optical resonator.

17. The cryogenic optoelectronic modulator according to claim 16 , wherein the optical resonator comprises a micro-ring resonator.

18. The cryogenic optoelectronic modulator according to claim 16 , wherein the optical resonator comprises a linear micro-resonator.

19. The cryogenic optoelectronic modulator according to claim 1 , wherein the electro-optic modulator comprises a plurality of optical resonators, each driven by one of a plurality of input signals, where each resonator has a unique and different resonant frequency.

20. The cryogenic optoelectronic modulator according to claim 19 , wherein the plurality of resonant frequencies of the plurality of resonators comprise an optical frequency comb.

21. The cryogenic optoelectronic modulator according to claim 1 , wherein the at least one input signal comprises a single-bit digital signal.

22. The cryogenic optoelectronic modulator according to claim 1 , wherein the at least one input signal comprises a plurality of parallel digital signals.

23. The cryogenic optoelectronic modulator according to claim 1 , wherein an energy per bit dissipated by the electro-optic modulator at the cryogenic temperature is less than about 1 pJ/bit.

24. The cryogenic optoelectronic modulator according to claim 1 , wherein the at least one input signal comprises an analog signal.

25. The cryogenic optoelectronic modulator according to claim 1 , wherein the electro-optic modulator operates at a temperature near 4 K.

26. An optical modulator, comprising:
at least one layer of graphene, modulated by a voltage input signal having a full scale peak amplitude of less than about 10 mV, at a temperature of less than about 100 K, and at a rate of at least 1 gigabits per second or a frequency of at least 1 GHz, the at least one layer of graphene having an optical property altered by the voltage input signal to produce a modulated optical signal from an optical signal; and
at least one optical port configured to transmit the modulated optical signal.

27. The optical modulator according to claim 26 , further comprising an optical receiving module, configured to demodulate the modulated optical signal to produce a representation of the voltage input signal, wherein the optical receiving module is adapted to be responsive to changes in the amplitude of the voltage input signal of less than about 10 mV to communicate digital signals at a rate of at least 1 gigabits per second at a bit error rate of less than 10 −3 .

28. An electro-optic communication method, comprising:
providing an optical modulation module, comprising at least one layer of graphene, configured to modulate an optical carrier input signal to cause an amplitude change of at least 0.1 dB or a phase change of at least 0.1 radians based a voltage input signal having a voltage of less than about 10 mV, to generate a modulated optical signal; and
modulating an optical signal with the optical modulation module.

29. The method according to claim 28 , wherein the at least one layer of graphene, is modulated with the voltage input signal having an amplitude less than about 10 mV, at a temperature of less than about 100 K, and at a rate of at least 1 gigabits per second or a frequency of at least 1 GHz, to produce a modulated optical signal from optical carrier input signal;
further comprising:
transmitting the modulated optical signal; and
demodulating the modulated optical signal with an optical receiving module, to produce a representation of the voltage input signal.

Assignees

• Hypres Inc
• Center For Technology Licensing At Cornell Univ
• Univ Columbia

Inventors

• Vernik Igor V
• Mukhanov Oleg A
• Kadin Alan M
• Phare Christopher Thomas
• Lipson Michal
• Bergman Keren

Classifications

• H04B10/5563

  Digital frequency modulation · CPC title

• H04B10/541

  Digital intensity or amplitude modulation · CPC title

• H04B10/505

  using external modulation · CPC title

• H04B10/80 Primary

  Optical aspects relating to the use of optical transmission for specific applications, not provided for in groups H04B10/03 - H04B10/70, e.g. optical power feeding or optical transmission through water · CPC title

• H04B10/5161

  Combination of different modulation schemes · CPC title