Method and apparatus for light absorption and charged carrier transport

Patent metadata

Field	Value
Publication number	US-10096789-B2
Application number	US-60137108-A
Country	US
Kind code	B2
Filing date	May 23, 2008
Priority date	May 23, 2007
Publication date	Oct 9, 2018
Grant date	Oct 9, 2018

Abstract

Embodiments of the invention pertain to the use of alloyed semiconductor nanocrystals for use in solar cells. The use of alloyed semiconductor nanocrystals offers materials that have a flexible stoichiometry. The alloyed semiconductor may be a ternary semiconductor alloy, such as A x B 1-x C or AB 1-y C y , or a quaternary semiconductor alloy, such as A x B y C 1-x-y D, A x B 1-x C y D 1-y or AB x C y D 1-x-y (where A, B, C, and D are different elements). In general, alloys with more than four elements can be used as well, although it can be much harder to control the synthesis and quality of such materials. Embodiments of the invention pertain to solar cells having a layer incorporating two or more organic materials such that percolated paths for one or both molecular species are created. Specific embodiments of the invention pertain to a method for fabricating nanostructured bulk heterojunction that facilitates both efficient exciton diffusion and charge transport. Embodiments of the subject invention pertain to a solar cell having an architecture that allows for efficient harvesting of solar energy. The organic solar cell architecture can incorporate a host/guest (or matrix/dopant) material system that utilizes the long diffusion lengths for triplet excitons without compromising light absorption efficiency.

First claim

The invention claimed is:

1. A method of fabricating a nanostructured bulk heterojunction, comprising:
providing a pre-patterned stamp with a plurality of features extending from a stamp body, the features of the plurality of features having depth and width,
wherein the width of the features of the plurality of features is in the range 10-100 nm;
depositing a first donor layer of first donor material on the pre-patterned stamp, such that a corresponding plurality of portions of the first donor layer extend from the plurality of features, and portions of first donor layer are deposited in between the features of the plurality of features,
wherein a thickness of the first donor layer is less than the depth of the features of the plurality of features,
wherein the first donor material is an organic semiconductor, and
wherein the first donor layer is 40-200 nm thick;
prior to depositing the first donor layer of first donor material on the pre-patterned stamp,
i. adding an adhesive reduction layer to a surface of the pre-patterned stamp to lower adhesion of the first donor layer to the surface of the pre-patterned stamp; or
ii. treating the surface of the pre-patterned stamp to lower adhesion of the first donor layer to the surface of the pre-patterned stamp;

depositing a second donor layer of second donor material on a substrate having an indium-tin-oxide coating;
stamping the pre-patterned stamp having the first donor layer onto the second donor layer on the substrate so as to transfer the plurality of portions of the first donor layer to the second donor layer on the substrate so as to create a corresponding plurality of protrusions of first donor material protruding from the second donor layer,
wherein the plurality of portions of the first donor layer transferred to the second donor layer on the substrate are portions of the first donor layer that are not deposited in between the features of the pre-patterned stamp; and
depositing acceptor material between the plurality of protrusions of first donor material and on top of the plurality of protrusions of first donor material.

2. The method according to claim 1 ,
wherein the pre-patterned stamp is made from Si.

3. The method according to claim 1 ,
wherein the pre-patterned stamp is made from polydimethylsiloxane.

4. The method according to claim 1 ,
wherein the first donor layer is 50-100 nm thick.

5. The method according to claim 1 ,
wherein the features of the plurality of features have a depth between 50 and 100 nm and a width between 10 and 100 nm.

6. The method according to claim 1 ,
wherein the second donor layer is about 5 nm thick.

7. The method according to claim 1 ,
wherein the substrate is a glass substrate.

8. The method according to claim 1 ,
wherein the method comprises:
adding the adhesive reduction layer to the surface of the pre-patterned stamp prior to depositing the first donor layer to lower adhesion of the first donor layer to the surface of the pre-patterned stamp.

9. The method according to claim 1 ,
wherein the method comprises:
treating the surface of the pre-patterned stamp prior to depositing the first donor layer to lower adhesion of the first donor layer to the surface of the pre-patterned stamp.

10. The method according to claim 1 , further comprising:
fabricating the pre-patterned stamp,
wherein fabricating the pre-patterned stamp comprises:
creating an etching mask on a second substrate; and
etching the second substrate to form the plurality of features.

11. The method according to claim 10 ,
wherein creating the etching mask on the second substrate comprises:
evaporating an Au layer on the second substrate; and
annealing the second substrate,
wherein upon annealing the second substrate, the Au atoms coalesce to form islands to create the etching mask on the second substrate.

12. The method according to claim 10 ,
wherein creating the etching mask on the second substrate comprises:
forming ordered structures on the second substrate via one or more block copolymers.

13. The method according to claim 12 ,
wherein the one or more block polymers comprise PS-PMMA,
wherein the method further comprises:
exposing the PS-PMMA to UV radiation; and
developing the exposed PS-PMMA to remove the PMMA phase.

14. The method according to claim 11 ,
wherein the Au layer is 10-20 nm thick.

15. The method according to claim 10 ,
wherein the second substrate is a Si substrate.

16. The method according to claim 10 ,
wherein the second substrate is a PDMS substrate.

17. The method according to claim 15 ,
wherein etching the second substrate comprises wet etching the second substrate.

18. The method according to claim 15 ,
wherein etching the second substrate comprises dry etching the second substrate.

19. The method according to claim 16 ,
wherein etching the second substrate comprises plasma dry etching the second substrate.

20. The method according to claim 1 ,
wherein the depth of the features of the plurality of features is in the range 50-200 nm.

21. The method according to claim 1 ,
wherein the second donor material is the same as the first donor material.

22. The method according to claim 1 ,
wherein the nanostructured bulk heterojunction comprises a pure domain of the first donor material extending normal from the second donor layer and a pure domain of the acceptor material extending normal from the second donor layer.

23. The method according to claim 1 ,
wherein the donor material is a phthalocyanine, a porphyrin, a derivative of a transition metal complex of a phthalocyanine, or a transition metal complex of a porphyrin.

24. The method according to claim 23 ,
wherein the transition metal complex of the phthalocyanine is copper phthalocyanine (CuPc).

25. The method according to claim 1 ,
wherein the acceptor material is a soluble derivative of fullerene, perylenes, naphthalenes, or nanotubules.

26. The method according to claim 23 ,
wherein the acceptor material is a soluble derivative of fullerene, perylenes, naphthalenes, or nanotubules.

27. The method according to claim 4 ,
wherein the features of the plurality of features have a width between 10 and 100 nm.

28. The method according to claim 27 ,
wherein the features of the plurality of features have a depth between 50 and 100 nm.

29. The method according to claim 27 ,
wherein the depth of the features of the plurality of features is in the range 50-200 nm.

30. The method according to claim 1 ,
wherein the width of the features of the plurality of features is in the range 10-100 nm.

31. The method according to claim 30 ,
wherein the features of the plurality of features have a depth between 50 and 100 nm.

32. A method of fabricating a device having a nano structured bulk heterojunction, comprising:
providing a substrate;
providing a pre-patterned stamp with a plurality of features extending from a stamp body, the features of the plurality of features having depth and width,
wherein the width of the features of the plurality of features is in the range 10-100 nm;
depositing a first donor layer of first donor material on the pre-patterned stamp, such that a corresponding plurality of portions of the first donor layer extend fr

Assignees

• Xue Jiangeng
• Univ Florida

Inventors

• Xue Jiangeng

Classifications

• H01L51/426

  Electricity · mapped topic

• Y02E10/549

  Organic PV cells · CPC title

• G03F7/0002

  Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping · CPC title

• H01L51/4213 Primary

  Electricity · mapped topic

• H01L51/0004

  Electricity · mapped topic