Systems and methods to connect sintered aluminum electrodes of an energy storage device
US-9721731-B2 · Aug 1, 2017 · US
US10096429B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10096429-B2 |
| Application number | US-201715636966-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 29, 2017 |
| Priority date | Dec 18, 2009 |
| Publication date | Oct 9, 2018 |
| Grant date | Oct 9, 2018 |
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This document provides an apparatus including a sintered electrode, a second electrode and a separator material arranged in a capacitive stack. A conductive interconnect couples the sintered electrode and the second electrode. Embodiments include a clip interconnect. In some embodiments, the interconnect includes a comb-shaped connector. In some embodiments, the interconnect includes a wire snaked between adjacent sintered substrates.
Opening claim text (preview).
What is claimed is: 1. An apparatus comprising: a cathode; a separator stacked with the cathode; an anode assembly disposed in a stack with the cathode and the separator, the separator disposed between the cathode and the anode assembly, wherein the anode assembly includes: a first layer including a first sintered material deposited on a first substrate; a second layer stacked with the first layer, the second layer including a second sintered material deposited on a second substrate, wherein the first substrate of the first layer and the second substrate of the second layer are facing each other; and a conductive interconnect located between the first substrate and the second substrate to electrically couple the first layer and the second layer of the anode assembly, and wherein a substrate connection portion of the first substrate and a second substrate connection portion of the second substrate are conformed to the conductive interconnect. 2. The apparatus of claim 1 , wherein the first substrate and the second substrate are substantially sinter-free along a path of the conductive element. 3. The apparatus of claim 1 , wherein the conductive interconnect is coupled to the first substrate and the second substrate. 4. The apparatus according to claim 1 , wherein the interconnect includes a wire snaked between the first layer and the second layer. 5. The apparatus of claim 1 , wherein the interconnect includes a conductive ribbon snaked between the first layer and the second layer. 6. The apparatus of claim 1 , wherein a sinter-free side of each anode substrate is proximate the other. 7. The apparatus of claim 1 , wherein the first and second substrates have a flexibility greater than a material flexibility of the sintered material. 8. The apparatus of claim 1 , wherein the conductive interconnect located between the first substrate and the second substrate physically and electrically couples the first layer and the second layer of the stack. 9. The apparatus of claim 8 , wherein the first layer includes a first tab extending from a first location along a perimeter of the first layer. 10. The apparatus of claim 9 , wherein the first layer includes a second tab extending from a second location, other than the first location, along the perimeter of the first layer. 11. The apparatus of claim 9 , wherein the second layer includes a second tab extending from the first location along a perimeter of the second layer, and wherein the first tab is coupled to the second tab using the interconnect. 12. The apparatus of claim 11 , including a weld to couple the first tab with second tab. 13. The apparatus of claim 12 , where at least one of the first layer and the second layer includes a notch configured to expose the conductive element disposed between the first substrate and the second substrate.
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