Laser device integrated with semiconductor optical amplifier on silicon substrate
US-2018090576-A1 · Mar 29, 2018 · US
US10095152B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10095152-B2 |
| Application number | US-201715487788-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 14, 2017 |
| Priority date | Aug 25, 2016 |
| Publication date | Oct 9, 2018 |
| Grant date | Oct 9, 2018 |
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A light emitting element array includes plural semiconductor stacked structures each including a light emitting unit that is formed on a substrate, and a light amplification unit that extends from the light emitting unit along a substrate surface of the substrate to have a length in an extension direction which is longer than that of the light emitting unit, amplifies light propagating in the extension direction from the light emitting unit, and emits the amplified light from a light emission portion formed along the extension direction, wherein the plural semiconductor stacked structures are arranged such that the extension directions of the respective light amplification units are substantially parallel to each other.
Opening claim text (preview).
What is claimed is: 1. A light emitting element array comprising: a plurality of semiconductor stacked structures each including a light emitting unit that is formed on a substrate, and a light amplification unit that extends from the light emitting unit along a substrate surface of the substrate to have a length in an extension direction which is longer than that of the light emitting unit, amplifies light propagating in the extension direction from the light emitting unit, and emits the amplified light from a light emission portion formed along the extension direction, wherein the plurality of semiconductor stacked structures are arranged such that the extension directions of the respective light amplification units are substantially parallel to each other. 2. The light emitting element array according to claim 1 , wherein each of the plurality of light emitting units includes a light blocking unit that blocks light to prevent the light emitted from the light emitting unit from being radiated to an outside. 3. The light emitting element array according to claim 2 , further comprising: a first polarity side electrode, wherein the substrate includes a first principal surface on which the plurality of semiconductor stacked structures are stacked, and a second principal surface on which the first polarity side electrode is formed, each light emitting units includes a second polarity side electrode that serves as the light blocking unit, and each light amplification unit includes two second polarity side electrodes which are disposed along the substrate surface and which have a gap therebetween constituting the light emission portion along the substrate surface. 4. The light emitting element array according to claim 1 , wherein each semiconductor stacked structure further includes a separation portion that is formed between the light emitting unit and the light amplification unit to electrically separate the light emitting unit and the light amplification unit. 5. The light emitting element array according to claim 1 , wherein the plurality of semiconductor stacked structures are arranged such that emission lights emitted from the light emission portions overlap each other. 6. The light emitting element array according to claim 5 , wherein the plurality of semiconductor stacked structures are arranged such that the emission lights overlap each other on an object to be irradiated. 7. An optical device comprising: a light emitting element array including a plurality of semiconductor stacked structures each including a light emitting unit that is formed on a substrate, and a light amplification unit that extends from the light emitting unit along a substrate surface of the substrate to have a length in an extension direction which is longer than that of the light emitting unit, amplifies light propagating in the extension direction from the light emitting unit, and emits the amplified light from a light emission portion formed along the extension direction, the plurality of semiconductor stacked structures being arranged such that the extension directions of the respective light amplification units are substantially parallel to each other; and a condensing lens that linearly condenses the light emitted from the light emitting element array in a direction that intersects the extension direction of the light amplification units. 8. The optical device according to claim 7 , wherein the condensing lens is a cylindrical lens having light condensing power in the direction that intersects the extension direction. 9. An image forming apparatus comprising: a light emitting element array including a plurality of semiconductor stacked structures each including a light emitting unit that is formed on a substrate, and a light amplification unit that extends from the light emitting unit along a substrate surface of the substrate to have a length in an extension direction which is longer than that of the light emitting unit, amplifies light propagating in the extension direction from the light emitting unit, and emits the amplified light from a light emission portion formed along the extension direction, the plurality of semiconductor stacked structures being arranged such that the extension directions of the respective light amplification units are substantially parallel to each other; an image forming unit that forms an image with an image forming material on a recording medium; and a moving unit that moves at least one of the light emitting element array and the recording medium along the extension direction of the light amplification units such that light is emitted to the image formed on the recording medium from the light emitting element array.
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having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] · CPC title
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