Optical element including primary and secondary structures arranged in a plurality of tracks
US-9588259-B2 · Mar 7, 2017 · US
US10095105B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10095105-B2 |
| Application number | US-201515326163-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 14, 2015 |
| Priority date | Jul 25, 2014 |
| Publication date | Oct 9, 2018 |
| Grant date | Oct 9, 2018 |
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There is provided a method for manufacturing a master on which an arbitrary pattern is formed, the method including: forming a thin-film layer on an outer circumferential surface of a base material in a round cylindrical or round columnar shape; generating a control signal corresponding to an object on the basis of an input image in which the object is depicted; irradiating the thin-film layer with laser light on the basis of the control signal and thereby forming a thin-film pattern corresponding to the object on the thin-film layer; and forming a pattern corresponding to the object on the outer circumferential surface of the base material using, as a mask, the thin-film layer on which the thin-film pattern is formed.
Opening claim text (preview).
The invention claimed is: 1. A method for manufacturing a master, the method comprising: forming a thin-film layer on an outer circumferential surface of a base material in a round cylindrical or round columnar shape; generating a control signal corresponding to an object on the basis of an input image in which the object is depicted, wherein the input image is divided into a plurality of small areas and the control signal is generated on the basis of a determination for each small area as to whether or not the depicted object is included therein; irradiating the thin-film layer with laser light on the basis of the control signal and thereby forming a thin-film pattern corresponding to the object on the thin-film layer, wherein portions of the thin-film layer are either irradiated with the laser light or are not irradiated with the laser light, based on which small areas the object is determined to be included in; and forming a pattern corresponding to the object on the outer circumferential surface of the base material using, as a mask, the thin-film layer on which the thin-film pattern is formed. 2. The method for manufacturing a master according to claim 1 , wherein a size of the small area is smaller than a size of a spot of the laser light. 3. The method for manufacturing a master according to claim 1 , wherein a light source of the laser light is a semiconductor laser, and the thin-film pattern is formed on the thin-film layer by thermal lithography. 4. The method for manufacturing a master according to claim 1 , wherein the forming the thin-film pattern on the thin-film layer includes irradiating the base material with the laser light while rotating the base material with a center axis of the base material as a rotation axis. 5. The method for manufacturing a master according to claim 4 , wherein the control signal is generated so as to be synchronized with a signal that controls the rotation of the base material. 6. A transfer copy to which a pattern of a master manufactured by the manufacturing method according to claim 1 is transferred. 7. A replica master to which a pattern of the transfer copy according to claim 6 is transferred. 8. A transfer copy to which a pattern of the replica master according to claim 7 is transferred. 9. The method for manufacturing a master according to claim 1 , wherein the thin-film layer includes an intermediate layer formed on the outer circumferential surface and a resist layer formed on the intermediate layer, and the forming the thin-film pattern on the thin-film layer includes developing the resist layer to form the thin-film pattern on the resist layer and etching the intermediate layer using the resist layer as a mask. 10. The method for manufacturing a master according to claim 9 , wherein an etching rate of the intermediate layer is higher than an etching rate of the resist layer, and the etching rate of the intermediate layer is lower than an etching rate of the base material. 11. The method for manufacturing a master according to claim 9 , wherein a thermal conductivity of the intermediate layer is less than or equal to 200 W/(m·K). 12. The method for manufacturing a master according to claim 9 , wherein a difference between a reflectance of the laser light to the resist layer directly formed on the base material and a reflectance of the laser light to the resist layer formed on the base material via the intermediate layer is less than or equal to 5%. 13. The method for manufacturing a master according to claim 9 , wherein the resist layer contains a metal oxide. 14. The method for manufacturing a master according to claim 9 , wherein the intermediate layer contains diamond-like carbon.
Sputtering · CPC title
characterised by the method of coating (C23C16/04 takes precedence) · CPC title
with at least one amorphous inorganic material layer, e.g. DLC, a-C:H, a-C:Me, the layer being doped or not · CPC title
by lasers · CPC title
Curved surfaces {(G03F7/70 takes precedence)} · CPC title
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