Method of forming photonics structures

Patent metadata

Field	Value
Publication number	US-10094988-B2
Application number	US-201213600779-A
Country	US
Kind code	B2
Filing date	Aug 31, 2012
Priority date	Aug 31, 2012
Publication date	Oct 9, 2018
Grant date	Oct 9, 2018

Abstract

The disclosed embodiments relate to an integrated circuit structure and methods of forming them in which photonic devices are formed on the back end of fabricating a CMOS semiconductor structure containing electronic devices. Doped regions associated with the photonic devices are formed using microwave annealing for dopant activation.

First claim

What is claimed as new and desired to be protected by Letters Patent of the United States is:

1. A method for fabricating an integrated structure, the method comprising:
fabricating a CMOS structure containing an electronic device over a substrate, wherein the electronic device is formed using a first semiconductor material;
fabricating a second semiconductor material over the first semiconductor material;
fabricating a buried oxide material between the first semiconductor material and the second semiconductor material,
fabricating a photonic device using the second semiconductor material, the photonic device comprising a modulator having associated doped regions and a photodetector; and
activating the doped regions with microwave energy such that the doped regions are heated to a temperature in the range of about 200 to about 500 degrees Celsius,
wherein the buried oxide material is configured to function as a cladding for the photonic device.

2. The method according to claim 1 , wherein the doped regions are heated to a temperature within the range of about 300 to about 400 degrees Celsius.

3. The method according to claim 1 , wherein the second semiconductor material is thicker than the first semiconductor material in which the electronic device of the CMOS structure is formed.

4. The method according to claim 1 , wherein the buried oxide material has a thickness greater than or equal to 1 micrometer and the second semiconductor material has a thickness greater than or equal to 200 nanometers.

5. The method according to claim 1 , wherein the dopant is heated with microwave energy for at least about five minutes.

6. The method according to claim 5 , wherein the dopant is heated with microwave energy for up to about two hours.

7. The method according to claim 1 , wherein the activating step occurs using microwave at a frequency greater than or equal to about 1.5 GHz and less than or equal to about 8.5 GHz.

8. The method according to claim 1 , wherein the activating step occurs using microwaves at a frequency of about 2.45 GHz and at a power of about 1300 W.

9. The method according to claim 1 , wherein fabricating the photonic device comprises forming a waveguide using the second semiconductor material and a photodetector material in association with the waveguide.

10. The method according to claim 9 , wherein the activating occurs before forming the photodetector material.

11. The method according to claim 9 , wherein the activating occurs after forming the photodetector material.

12. The method according to claim 10 , wherein the photodetector material comprises one of germanium and silicon-germanium.

13. The method according to claim 1 , further comprising forming an electrical connection between a metallization material and the photonic device.

14. The method according to claim 13 , further comprising forming an electrical connection between a metallization material associated with an electronic device in the CMOS structure and a metallization material associated with the photonic device.

15. The method according to claim 1 , wherein the photonic device is fabricated after forming the first semiconductor material over the fabricated CMOS structure.

Assignees

• Sandhu Gurtej
• Micron Technology Inc

Inventors

• Sandhu Gurtej

Classifications

• H10P95/90

  Thermal treatments, e.g. annealing or sintering · CPC title

• H10D84/80 Primary

  characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs (H10D84/40 takes precedence) · CPC title

• G02B6/122 Primary

  Basic optical elements, e.g. light-guiding paths · CPC title

• G02B2006/12142

  Modulator · CPC title

• G02B2006/12061

  Silicon · CPC title