Method of manufacturing multilayer body, method of processing substrate, and multilayer body

Patent metadata

Field	Value
Publication number	US-10094024-B2
Application number	US-201214127315-A
Country	US
Kind code	B2
Filing date	May 31, 2012
Priority date	Jun 24, 2011
Publication date	Oct 9, 2018
Grant date	Oct 9, 2018

Abstract

A method for forming a release layer which lies between a substrate and a supporting member and has a property that changes when the release layer absorbs light coming through the supporting member, by carrying out plasma CVD with a high-frequency power that is set so as to be higher than a power at which a mode jump occurs.

First claim

What invention claimed is:

1. A method for producing a laminate, the laminate including (i) a substrate, (ii) a light-transmitting supporting member which supports the substrate and (iii) a release layer which lies between the substrate and the supporting member and has a property that changes when the release layer absorbs light coming through the supporting member, wherein the release layer absorbs 80% or more of light having a wavelength of 600 nm or less, wherein
said method comprises forming the release layer by plasma CVD using a reactive gas containing a fluorocarbon gas as a main component; and wherein
forming the release layer comprises carrying out the plasma CVD with a high-frequency power that is higher than a power at which a mode jump from E-mode plasma to H-mode plasma occurs.

2. The method according to claim 1 , wherein, in forming the release layer, the plasma CVD is carried out at a layer formation temperature of 300° C. or lower.

3. The method according to claim 1 , wherein, in forming the release layer, the plasma CVD is carried out in a reaction chamber made of ceramics.

4. A method for processing a substrate, comprising:
producing the laminate by the method recited in claim 1 and thereafter;
irradiating the supporting member-side of the release layer with light to thereby change the property of the release layer and thereafter;
separating the supporting member from the substrate.

5. The method according to claim 1 , wherein the reactive gas contains a hydrocarbon gas as an additive gas.

6. A method for processing a substrate, comprising:
producing the laminate by a method recited in claim 2 and thereafter;
irradiating the supporting member-side of the release layer with light to thereby change the property of the release layer and thereafter;
separating the supporting member from the substrate.

7. A method for processing a substrate, comprising:
producing the laminate by a method recited in claim 3 and thereafter;
irradiating the supporting member-side of the release layer with light to thereby change the property of the release layer and thereafter;
separating the supporting member from the substrate.

Assignees

• Fujii Yasushi
• Mitake Tatsuhiro
• Matsushita Atsushi
• Tokyo Ohka Kogyo Co Ltd

Inventors

• Fujii Yasushi
• Mitake Tatsuhiro
• Matsushita Atsushi

Classifications

• H10P72/7448

  the bond interface between the auxiliary support and the wafer comprising two or more, e.g. multilayer adhesive or adhesive and release layer · CPC title

• H10P72/7422

  used to protect an active side of a device or wafer · CPC title

• H10P72/7418

  of passive members, e.g. a chip mounting substrate · CPC title

• H10P72/7416

  used during dicing or grinding · CPC title

• H10P72/7412

  the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support · CPC title