Method of fabricating contact elements in an electrochemical device such as SOFC or EHT

Patent metadata

Field	Value
Publication number	US-10090549-B2
Application number	US-201314412996-A
Country	US
Kind code	B2
Filing date	Jun 24, 2013
Priority date	Jul 5, 2012
Publication date	Oct 2, 2018
Grant date	Oct 2, 2018

Abstract

The invention relates to a method of fabricating a contact element in an electrochemical device ( 9 ) such as an SOFC or an EHT which comprises the following steps: a) use is made of: at least one cell ( 8 ) consisting of an assemblage made up of an electrode to be hydrogenated ( 5 )-electrolyte ( 4 )-electrode to be oxygenated ( 3 ); at least one first interconnector ( 1 ); and at least one second interconnector ( 7 ); b) at least one layer of a conducting material is deposited on the first interconnector ( 1 ) and/or the second interconnector ( 7 ); c) an electrochemical device ( 9 ) is assembled; said method being characterized in that: d) a thermomechanical treatment is carried out on the electrochemical device obtained on completion of step c). The invention also relates to an electrochemical device ( 9 ) equipped with at least one contact element ( 2 ) obtained according to this fabrication method.

First claim

The invention claimed is:

1. A method for manufacturing a contact element in an electrochemical device which comprises the following steps:
a) there are disposed:
at least one cell comprising a hydrogen electrode-electrolyte-oxygen electrode assembly;
at least a first interconnector;
at least a second interconnector;

b) at least one layer of a conductive material is deposited over the first interconnector and/or the second interconnector;
c) an electrochemical device is assembled by disposing the cell between the first interconnector and the second interconnector so that the conductive material layer is in contact with the oxygen electrode and/or the hydrogen electrode of the cell; and
d) a thermo-mechanical treatment is carried out on the electrochemical device obtained at the end of step c) so as to form at least one contact element constituted of said conductive material and which ensures electrical contact and mechanical accommodation between said interconnectors and said electrodes, the thermo-mechanical treatment comprising concomitantly subjecting the electrochemical device to a temperature comprised between 850° C. and 1200° C. and applying thereto a mechanical stress comprised between 0.01 and 10 MPa,
wherein at the end of the assembly step c) and prior to the step d) of thermo-mechanical treatment, the electrochemical device is heated to a nominal operating temperature comprised between about 600° C. and 900° C.

2. The manufacturing method according to claim 1 , wherein the conductive material exhibits, at least for a period of time during the thermo-mechanical treatment of step d), a porosity comprised between 30% and 80%.

3. The manufacturing method according to claim 1 , wherein, in step b), at least one conductive material layer is deposited over the first interconnector and in step c), an electrochemical device is constituted by disposing the cell between the first interconnector and the second interconnector so that the conductive material layer is in contact with the oxygen electrode of the cell.

4. The manufacturing method according to claim 1 , wherein the conductive material has an electrical conductivity of at least 0.1 S·cm −1 under air at 800° C.

5. The manufacturing method according to claim 4 , wherein the conductive material is selected from the group consisting of:
La 0.6 Sr 0.4 Co 0.8 Fe 0.2 O 3 (LSCF);
La 0.8 Sr 0.2 Cu 0.9 Fe 0.1 O 2.5 (LSCuF);
La 0.7 Sr 0.3 CoO 3 (LSC);
Sm 0.5 Sr 0.5 CoO 3 (SSC);
SmBa 0.5 Sr 0.5 Co 2 O 5 (SBSC);
GdSrCo 2 O 5 (GSC);
La 0.65 Sr 0.3 MnO 3 (LSM);
LaBaCo 2 O 5 (LBC);
YBaCo 2 O 5 (YBC);
Nd 1.8 Ce 0.2 CuO 4 (NCC);
La 0.8 Sr 0.2 Co 0.3 Mn 0.1 Fe 0.6 O 3 (LSCMF);
La 0.98 Ni 0.6 Fe 0.4 O 3 (LNF);
La 1.2 Sr 0.8 NiO 4 (LSN);
La 0.7 Sr 0.3 FeO 3 (LSF); and
La 2 Ni 0.6 Cu 0.4 O 4 (LNC).

6. The manufacturing method according to claim 1 , wherein the at least one layer of the conductive material has a porosity comprised between 30% and 80%.

7. The manufacturing method according to claim 1 , wherein the at least one layer of the conductive material comprises at least one pore-forming agent.

8. The manufacturing method according to claim 1 , wherein the range of heating and/or cooling rate during the step d) of thermo-mechanical treatment is comprised between 0.5° C./min and 500° C./min.

9. The manufacturing method according to claim 1 , wherein the range of the mechanical stress applied during the step d) of thermo-mechanical treatment is comprised between 0.05 MPa and 5 MPa.

10. An electrochemical device, equipped with at least one contact element obtained with the manufacturing method according to claim 1 .

11. The electrochemical device according to claim 10 , wherein the device comprises a SOFC or a HTE.

12. The manufacturing method according to claim 1 , wherein the electrochemical device comprises a SOFC or a HTE.

13. The manufacturing method according to claim 1 , wherein the nominal operating temperature is between about 600° C. and about 800° C.

14. The manufacturing method according to claim 1 , wherein at the end of the step d) of thermo-mechanical treatment, the temperature of the electrochemical device is lowered to the nominal operating temperature of the electrochemical device comprised between about 600° C. and 900° C.

15. The manufacturing method according to claim 14 , wherein the nominal operating temperature is between about 600° C. and about 800° C.

16. The manufacturing method according to claim 14 , wherein before lowering the temperature of the electrochemical device, the mechanical stress is decreased at most 90%.

17. The manufacturing method according to claim 16 , wherein concomitantly subjecting the electrochemical device to the temperature comprised between 850° C. and 1200° C. and applying thereto the mechanical stress comprised between 0.01 and 10 MPa comprises
concomitantly subjecting the electrochemical device to a first temperature between 850° C. and 1200° C. and applying thereto the mechanical stress comprised between 0.01 and 10 MPa; and
concomitantly subjecting the electrochemical device to a second temperature between 850° C. and 1200° C. and applying thereto the mechanical stress comprised between 0.01 and 10 MPa, the second temperature being less than the first temperature.

18. The manufacturing method according to claim 17 , wherein before lowering the temperature of the electrochemical device, the mechanical stress is not decreased.

19. The manufacturing method according to claim 17 , wherein at the end of the assembly step c) and prior to the step d) of thermo-mechanical treatment, the electrochemical device is heated to the nominal operating temperature comprised between about 600° C. and 900° C. while concomitantly subjecting the electrochemical device to the mechanical stress comprised between 0.01 and 10 MPa.

20. The manufacturing method according to claim 14 , wherein before lowering the temperature of the electrochemical device, the mechanical stress is not decreased.

Assignees

• Commissariat Energie Atomique

Inventors

• Di Iorio Stephane
• Morel Bertrand
• Rado Cyril

Classifications

• H01M8/0217

  Complex oxides, optionally doped, of the type AMO3, A being an alkaline earth metal or rare earth metal and M being a metal, e.g. perovskites · CPC title

• H01M8/1246 Primary

  the electrolyte consisting of oxides · CPC title

• H01M8/0228

  in the form of layered or coated products · CPC title

• Y02E60/366

  Cross-Sectional Technologies · mapped topic

• C25B9/18

  Chemistry & Metallurgy · mapped topic