Crack-stop structure for an IC product and methods of making such a crack-stop structure

Patent metadata

Field	Value
Publication number	US-10090258-B1
Application number	US-201715713843-A
Country	US
Kind code	B1
Filing date	Sep 25, 2017
Priority date	Sep 25, 2017
Publication date	Oct 2, 2018
Grant date	Oct 2, 2018

Abstract

One illustrative crack-stop structure disclosed herein may include a first crack-stop metallization layer comprising a first metal line layer that has a plurality of openings formed therein and a second crack-stop metallization layer positioned above and adjacent the first crack-stop metallization layer, wherein the second crack-stop metallization layer has a second metal line layer and a via layer, and wherein the via layer comprises a plurality of vias having a portion that extends at least partially into the openings in the first metal line layer of the first crack-stop metallization layer so as to thereby form a stepped, non-planar interface between the first metal line layer of the first crack-stop metallization layer and the via layer of the second crack-stop metallization layer.

First claim

What is claimed:

1. A crack-stop structure, comprising:
a first crack-stop metallization layer comprising a first metal line layer, said first metal line layer comprising a plurality of metal lines and a plurality of openings formed therein between adjacent metal lines; and
a second crack-stop metallization layer positioned above and adjacent said first crack-stop metallization layer, said second crack-stop metallization layer comprising a second metal line layer and a via layer, said via layer comprising a plurality of vias, each having a portion that extends at least partially into one of said plurality of openings in said first metal line layer so as to thereby form a stepped, non-planar interface between said first metal line layer of said first crack-stop metallization layer and said via layer of said second crack-stop metallization layer, wherein each via contacts an uppermost surface and a sidewall surface of each of said adjacent metal lines defining said one of said plurality of openings.

2. The crack-stop structure of claim 1 , wherein said plurality of openings extend through an entire thickness of said first metal line layer.

3. The crack-stop structure of claim 1 , wherein each of said plurality of openings is partially filled with an insulating material that has an upper surface that is positioned at a level that is below a level of an upper surface of said first metal line layer, wherein a first portion of said vias contacts said upper surface of said first metal line layer and wherein a second portion of said vias contacts said upper surface of said insulating material so as to form said stepped, non-planar interface between said first metal line layer of said first crack-stop metallization layer and said via layer of said second crack-stop metallization layer.

4. The crack-stop structure of claim 1 , wherein said first metal line layer is a M1 metal layer, said second metal line layer is a M2 metal layer, said via layer is a V1 via layer and wherein said first crack-stop metallization layer and said second crack-stop metallization layer comprise copper.

5. The crack-stop structure of claim 1 , wherein each of said vias has a stepped bottom surface with a footprint area that is greater than a footprint area of one of said plurality of openings.

6. The crack-stop structure of claim 1 , wherein, when viewed from above, each of said plurality of openings have one of a square configuration, a rectangular configuration or a continuous linear trench configuration and wherein said plurality of openings are arranged in a repetitive pattern.

7. The crack-stop structure of claim 1 , further comprising:
a plurality of second openings formed in said second metal line layer of said second crack-stop metallization layer; and
a third crack-stop metallization layer positioned above and adjacent said second crack-stop metallization layer, said third crack-stop metallization layer comprising a third metal line layer and a second via layer, said second via layer comprising a plurality of second vias having a portion that extends at least partially into said plurality of second openings in said second metal line layer so as to thereby form a stepped, non-planar interface between said second metal line layer of said second crack-stop metallization layer and said second via layer of said third crack-stop metallization layer.

8. A crack-stop structure, comprising:
a first crack-stop metallization layer comprising a first metal line layer, said first metal line layer comprising a plurality of metal lines and a plurality of openings formed therein between adjacent metal lines, wherein said plurality of openings extend through an entire thickness of said first metal line layer; and
a second crack-stop metallization layer positioned above and adjacent said first crack-stop metallization layer, said second crack-stop metallization layer comprising a second metal line layer and a via layer, said via layer comprising a plurality of vias, wherein each of said plurality of vias has a stepped bottom surface and an extended portion that is positioned at least partially in one of said plurality of openings in said first metal line layer, wherein an interface between said vias and said plurality of openings forms a stepped, non-planar interface between said first metal line layer of said first crack-stop metallization layer and said second via layer of said second crack-stop metallization layer and wherein each of said vias has a first portion that contacts an uppermost surface of each of said adjacent metal lines defining said one of said plurality of openings around an entire perimeter of said one of said plurality of openings and a second portion that contacts a sidewall portion of each of said adjacent metal lines.

9. The crack-stop structure of claim 8 , wherein each of said plurality of openings is partially filled with an insulating material that has an upper surface that is positioned at a level that is below a level of an upper surface of said first metal line layer, wherein a second portion of said via contacts said upper surface of said insulating material.

10. The crack-stop structure of claim 8 , wherein said stepped bottom surface of each of said vias has a footprint area that is greater than a footprint area of said one of said plurality of openings.

11. The crack-stop structure of claim 8 , further comprising:
a plurality of second openings formed in said second metal line layer of said second crack-stop metallization layer; and
a third crack-stop metallization layer positioned above and adjacent said second crack-stop metallization layer, said third crack-stop metallization layer comprising a third metal line layer and a second via layer, said second via layer comprising a plurality of second vias having a portion that extends at least partially into said plurality of second openings in said second metal line layer, wherein an interface between said second vias and said second openings forms a second stepped, non-planar interface between said second metal line layer of said second crack-stop metallization layer and said second via layer of said third crack-stop metallization layer.

12. A method of forming a crack-stop structure, the method comprising:
forming a first metal line layer of a first crack-stop metallization layer, wherein said first metal line layer comprises a plurality of metal lines and a plurality of openings defined between adjacent metal lines; and
forming a second crack-stop metallization layer above and adjacent said first crack-stop metallization layer, said second crack-stop metallization layer comprising a second metal line layer and a via layer, wherein forming said second crack-stop metallization layer comprises forming said via layer such that it has a plurality of vias, each of which comprises an extended portion that extends at least partially into one of said plurality of openings in said first metal line layer so as to thereby form a stepped, non-planar interface between said first metal line layer of said first crack-stop metallization layer and said via layer of said second crack-stop metallization layer, wherein each via contacts an uppermost surface and a sidewall surface of each of said adjacent metal lines defining said one of said plurality of openings.

13. The method of claim 12 , wherein forming said plurality of openings in said first metal line layer comprises forming said plurality of openings such that they extend through an entire thickness of said first metal line layer.

14. The method of claim 12 , further comprising forming an insulation material in each of said plurality of openings, wherein said ins

Assignees

• Globalfoundries Inc

Inventors

• Boyd Kevin
• Fox Robert
• Trewhella Jeannine
• Augur Roderick Alan
• Polomoff Nicholas A

Classifications

• H10W42/00

  Arrangements for protection of devices (arrangements for thermal protection H10W40/00) · CPC title

• H10W20/083

  the openings being via holes penetrating underlying conductors · CPC title

• H10W20/056

  by filling conductive material into holes, grooves or trenches · CPC title

• H10W20/033

  in openings in dielectrics · CPC title

• H10W20/20

  Interconnections within wafers or substrates, e.g. through-silicon vias [TSV] · CPC title