Spectral matching based calibration

Patent metadata

Field	Value
Publication number	US-10088413-B2
Application number	US-201213680273-A
Country	US
Kind code	B2
Filing date	Nov 19, 2012
Priority date	Nov 21, 2011
Publication date	Oct 2, 2018
Grant date	Oct 2, 2018

Abstract

Methods and systems for calibrating system parameter values of a target inspection system are presented. Spectral Error Based Calibration (SEBC) increases consistency among inspection systems by minimizing differences in the spectral error among different inspection systems for a given specimen or set of specimens. The system parameter values are determined such that differences between a spectral error associated with a measurement of a specimen by the target inspection system and a spectral error associated with a measurement of the same specimen by a reference inspection system are minimized. In some examples, system parameter values are calibrated without modifying specimen parameters. Small inaccuracies in specimen parameter values have little effect on the calibration because the target system and the reference system both measure the same specimen or set of specimens. By performing SEBC over a set of specimens, the resulting calibration is robust to a wide range of specimens under test.

First claim

What is claimed is:

1. A method comprising:
providing a first amount of illumination light having wavelengths within a spectral band between 150 nanometers and 850 nanometers to one or more structures disposed on a semiconductor wafer;
polarizing the first amount of illumination light before incidence on the semiconductor wafer;
analyzing a first amount of light collected from the one or more structures disposed on the semiconductor wafer in response to the first amount of polarized illumination light provided to the semiconductor wafer;
detecting the first amount of analyzed light with a spectrometer;
generating a measured spectral response of the one or more structures as measured by a target inspection system from the first amount of detected light;
estimating a modeled spectral response of the one or more structures as measured by the target inspection system based on a model of the spectral response of the one or more structures disposed on the semiconductor wafer as measured by the target inspection system, wherein the modeled spectral response is based at least in part on a value of at least one system parameter of the target inspection system;
determining a first spectral error associated with the target inspection system based on a difference between the measured spectral response of the one or more structures and the modeled spectral response of the one or more structures as measured by the target inspection system;
providing a second amount of broadband illumination light to the one or more structures disposed on the semiconductor wafer;
detecting a second amount of light from a portion of the semiconductor wafer in response to the second amount of illumination light provided to the semiconductor wafer;
generating a measured spectral response of the one or more structures as measured by a reference inspection system from the second amount of detected light, wherein a value of the at least one system parameter of the reference inspection system is different from the value of the at least one system parameter of the target inspection system;
estimating a modeled spectral response of the one or more structures as measured by the reference inspection system based on a model of the spectral response of the one or more structures disposed on the semiconductor wafer as measured by the reference inspection system;
determining a first spectral error associated with the reference inspection system based on a difference between the measured spectral response of the one or more structures and the modeled spectral response of the one or more structures as measured by the reference inspection system;
determining an updated value of the at least one system parameter of the target inspection system such that an error function that includes a difference between the first spectral error of the target inspection system and the first spectral error of the reference inspection system is minimized;
estimating a second modeled spectral response of the one or more structures as measured by the target inspection system based on the model of the spectral response of the one or more structures disposed on the semiconductor wafer as measured by the target inspection system, wherein the second modeled spectral response is based at least in part on the updated value of the at least one system parameter of the target inspection system; and
determining a value of a parameter indicative of a structural property of the one or more structures such that an error function that includes a difference between the measured spectral response of the one or more structures as measured by the target inspection system and the second modeled spectral response is minimized.

2. The method of claim 1 , wherein the target inspection system and the reference inspection system are spectroscopic ellipsometers.

3. The method of claim 1 , wherein the reference inspection system is an inspection system in a first physical configuration and the target inspection system is the inspection system in a second physical configuration.

4. The method of claim 1 , wherein the reference inspection system is an inspection system measured at a first time and the target inspection system is the inspection system measured at a second time after the first time.

5. The method of claim 1 , wherein the at least one system parameter does not include a parameter associated with the one or more structures disposed on the semiconductor wafer.

6. The method of claim 1 , wherein the value of the system parameter of the reference inspection system includes a nominal angle of incidence that is different from a nominal angle of incidence of the target inspection system.

7. The method of claim 1 , further comprising:
receiving an indication of a measured spectral response of one or more structures disposed on a second semiconductor wafer based on a measurement of the second semiconductor wafer by the target inspection system;
determining a second spectral error associated with the target inspection system based on a difference between the measured spectral response of the second semiconductor wafer and a modeled spectral response of the second semiconductor wafer to the measurement by the target inspection system, the modeled spectral response of the second semiconductor wafer based at least in part on the at least one system parameter of the target inspection system;
receiving a second spectral error associated with the reference inspection system based on a difference between a measured spectral response and a modeled spectral response of the second semiconductor wafer to a measurement of the second semiconductor wafer by the reference inspection system, and wherein the determining of the updated value of the at least one system parameter of the target inspection system involves minimizing an error function that includes the first and second spectral errors of the target inspection system and the first and second spectral errors of the reference inspection system.

8. The method of claim 1 , wherein the at least one system parameter of the reference inspection system and the target inspection system is any of an angle of incidence, an analyzer angle, a polarizer angle, and a numerical aperture.

9. An inspection system comprising:
an illuminator configured to provide an amount of illumination light to one or more structures disposed on a semiconductor wafer;
a polarizer configured to polarize the amount of illumination light before incidence on the semiconductor wafer;
an analyzer configured to analyze an amount of light collected from the one or more structures disposed on the semiconductor wafer in response to the polarized illumination light provided to the semiconductor wafer;
a spectrometer configured to detect the amount of analyzed light and generate a measured spectral response of the one or more structures as measured by the inspection system from the amount of detected light; and
a non-transitory, computer-readable medium, comprising:
code for causing a computer to estimate a modeled spectral response of the measurement of the one or more structures disposed on the semiconductor wafer by the inspection system, wherein the modeled spectral response is based at least in part on a value of at least one system parameter of the inspection system;
code for causing the computer to determine a first spectral error associated with the inspection system based on a difference between the measured spectral response of the one or more structures disposed on the semiconductor wafer and a modeled spectral response of the one or more structures disposed on the semiconductor wafer by the inspection system;
code for causing the computer to receive a first spectral error associated with a reference ins

Assignees

• Kla Tencor Corp

Inventors

• Kwak Hidong
• Jiang Zhiming
• Dixon Ward Rdell
• James Jr Kenneth Edward
• Poslavsky Leonid
• Kaack Torsten

Classifications

• G03F7/70608

  Monitoring the unpatterned workpiece, e.g. measuring thickness, reflectivity or effects of immersion liquid on resist · CPC title

• G01N21/274 Primary

  Calibration, base line adjustment, drift correction · CPC title

• G01N21/211 Primary

  Ellipsometry (optical thickness measurement G01B11/06) · CPC title