Semiconductor module
US-2016315038-A1 · Oct 27, 2016 · US
US10084388B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10084388-B2 |
| Application number | US-201515325949-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 12, 2015 |
| Priority date | Aug 22, 2014 |
| Publication date | Sep 25, 2018 |
| Grant date | Sep 25, 2018 |
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A power converter includes: a base conductor, an electrically heating member which is provided on the base conductor, a noise reduction capacitor of flat plate-shape in which via an insulator, a plurality of first electrodes and second electrodes are alternately layered, on one surface, the first electrode in an outermost layer is exposed and on another surface, the second electrode in an outermost layer is exposed, a relay conductor which is electrically connected to other members from the electrically heating member via the noise reduction capacitor, and the second electrode in an outermost layer of the noise reduction capacitor is face-joined to a face of the base conductor at a side where the electrically heating member is provided and the first electrode in an outermost layer and the relay conductor are face-joined.
Opening claim text (preview).
The invention claimed is: 1. A power converter comprising a base conductor, an electrically heating member which is provided on the base conductor, at least one noise reduction capacitor of flat plate-shape in which via an insulator, a plurality of first electrodes and second electrodes are alternately layered, on one surface, the first electrode in an outermost layer is exposed and on another surface, the second electrode in an outermost layer is exposed, and a at least one relay conductor of plate-shape which is electrically connected to the base conductor via the noise reduction capacitor, wherein the noise reduction capacitor is sandwiched between the base conductor and the relay conductor with the second electrode in an outermost layer of the noise reduction capacitor being directly face-joined to a face of the base conductor at a side where the electrically heating member is provided so as to be affixed to the base conductor, and the first electrode in an outermost layer of the noise reduction capacitor and the relay conductor being face-joined. 2. The power converter according to claim 1 , wherein the electrically heating member is a semiconductor module. 3. The power converter according to claim 1 , wherein the electrically heating member is a coil. 4. The power converter according to claim 1 , wherein a conductive board which is affixed to the base conductor is provided, by face-joining. 5. The power converter according to claim 1 , wherein a conductive board which is affixed to the base conductor is provided, the conductive board constitutes the second electrode in the outermost layer. 6. The power converter according to claim 1 , wherein instead of face-joining the first electrode in the outermost layer and the relay conductor, the relay conductor also functions as the first electrode in the outermost layer. 7. The power converter according to claim 2 , wherein the semiconductor module comprises a positive pole side semiconductor element and a negative pole side semiconductor element which constitute a semi-bridge circuit which is connected to a power converter circuit, wherein each of the at least one relay conductor is connected to a positive pole side terminal of the positive pole side semiconductor and a negative pole side terminal of the negative pole side semiconductor, individually, and wherein each of the at least one noise reduction capacitor is individually connected to a respective relay conductor, and a snubber component is connected between each of the noise reduction capacitors or between each of the relay conductors. 8. The power converter according to claim 2 , wherein a semiconductor element which is provided in the semiconductor module is formed of wide bandgap semiconductor. 9. The power converter according to claim 8 , wherein the wide bandgap semiconductor is a semiconductor selecting from silicon carbide, a gallium nitride based material and diamond.
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