Silicon oxide-carbon composite and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-10084183-B2
Application number	US-201314109611-A
Country	US
Kind code	B2
Filing date	Dec 17, 2013
Priority date	Oct 16, 2012
Publication date	Sep 25, 2018
Grant date	Sep 25, 2018

Abstract

Provided are a silicon oxide-carbon composite and a method of manufacturing the same. More particularly, the present invention provides a method of manufacturing a silicon oxide-carbon composite including mixing silicon and silicon dioxide to be included in a reaction chamber, depressurizing a pressure of the reaction chamber to obtain a high degree of vacuum while increasing a temperature in the reaction chamber to a reaction temperature, reacting the mixture of silicon and silicon dioxide in a reducing atmosphere, and coating a surface of silicon oxide manufactured by the reaction with carbon, and a silicon oxide-carbon composite manufactured thereby.

First claim

The invention claimed is:

1. A method of manufacturing a silicon oxide-carbon composite, the method comprising:
mixing silicon and silicon dioxide in a molar ratio of 0.25:1 to 0.99:1 to be included in a reaction chamber;
depressurizing a pressure of the reaction chamber to obtain a high degree of vacuum while increasing a temperature in the reaction chamber to a reaction temperature;
reacting the mixture of silicon and silicon dioxide in a reducing atmosphere to produce a silicon oxide; and
coating a surface of the silicon oxide manufactured by the reaction with carbon,
wherein the reducing atmosphere is formed by including in a separate container in the reaction chamber one or more of a material selected from the group consisting of active carbon, magnesium, aluminum, tantalum, molybdenum, calcium, and zinc which reacts with oxygen in the chamber during the reaction of the silicon and the silicon dioxide to reduce the amount of oxygen within the chamber and thus reduce the amount of oxygen that is included in the silicon oxide, and
wherein the high degree of vacuum is maintained until the reaction of silicon and silicon dioxide is completed.

2. The method of claim 1 , wherein the reaction temperature is in a range of 1300° C. to 1500° C. and is held for 2 hours to 4 hours.

3. The method of claim 1 , wherein the high degree of vacuum is in a range of 10 −4 torr to 10 −1 torr.

4. The method of claim 1 , wherein the carbon coating is performed by including performing a heat treatment after mixing silicon oxide with a carbon precursor.

5. The method of claim 4 , wherein the carbon precursor is pitch or a hydrocarbon-based material.

6. The method of claim 5 , wherein the hydrocarbon-based material is any one selected from the group consisting of furfuryl alcohol, glucose, sucrose, a phenol-based resin, a phenol-based oligomer, a resorcinol-based resin, a resorcinol-based oligomer, a phloroglucinol-based resin, a phloroglucinol-based oligomer, and an unsaturated hydrocarbon gas, or a mixture of two or more thereof.

7. The method of claim 4 , wherein the heat treatment is performed in a temperature range of 200° C. to 1,000° C.

8. The method of claim 1 , wherein the material that reacts with oxygen is one or more of a material selected from the group consisting of active carbon, tantalum, molybdenum, and zinc.

Assignees

• Lg Chemical Ltd

Inventors

• Park Cheol Hee
• Jeong Han Nah
• Jung Sang Yun
• Lim Byung Kyu
• Lee Yong Ju

Classifications

• H01M4/386

  Silicon or alloys based on silicon · CPC title

• H01M4/587 Primary

  for inserting or intercalating light metals · CPC title

• C01B33/181

  by a dry process · CPC title

• H01M4/1395

  of electrodes based on metals, Si or alloys · CPC title

• H01M4/625

  Carbon or graphite · CPC title